DS30379 Rev. 3 - 2 1 of 5 ASMCC0096
www.diodes.com ã Diodes Incorporated
ASMCC0096
APPLICATION SPECIFIC MULTI CHIP CIRCUIT
ASMCCTM
·Epitaxial Planar Die Construction
·Ideally Suited for Automated Assembly
Processes
·Lead Free Product
Features
Notes: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
·Case: SOT-363, Molded Plastic
·Case material - UL Flammability Rating
Classification 94V-0
·Moisture sensitivity: Level 1 per J-STD-020A
·Terminals: Solderable per MIL-STD-202,
Method 208
·Terminal Connections: See Diagram Below
·Marking: A96
·Date Code & Marking Information: See Page 2
·Weight: 0.008 grams (approx.)
Mechanical Data
A
M
JL
D
BC
H
K
G
F
Maximum Ratings, Total Device @ TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 1) Pd200 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 625 °C/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Maximum Ratings, NPN Transistor Element @ TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current - Continuous (Note 1) IC200 mA
Maximum Ratings, Zener Element @ TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Forward Voltage @ IF = 10mA VF0.9 V
A1
E1
K1NC
C1
B1
MMBT3904
UDZ5V6B
SOT-363
Dim Min Max
A0.10 0.30
B1.15 1.35
C2.00 2.20
D0.65 Nominal
F0.30 0.40
H1.80 2.20
J¾0.10
K0.90 1.00
L0.25 0.40
M0.10 0.25
a0°8°
All Dimensions in mm
DS30379 Rev. 3 - 2 2 of 5 ASMCC0096
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Electrical Characteristics, NPN Transistor Element @ TA = 25°C unless otherwise specified
Notes: 2. Short duration test pulse used to minimize self-heating effect.
Electrical Characteristics, Zener Element
@ TA = 25°C unless otherwise specified
Type
Number
Zener Voltage Range (Note 2) Maximum Zener Impedance Maximum Reverse
Leakage Current
VZ @ IZT IZT ZZT @I
ZT ZZK @ IZK
= 0.5mA I
R@VR
Nom (V) Min (V) Max (V) mA WmAV
UDZ5V6B 5.6 5.49 5.73 5 60 200 1.0 2.5
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage V(BR)CBO 60 ¾VIC= 10mA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 40 ¾VIC= 1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾VIE = 10mA, IC = 0
Collector Cutoff Current ICEX ¾50 nA VCE = 30V, VEB(OFF) = 3.0V
Base Cutoff Current IBL ¾50 nA VCE = 30V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE
40
70
100
60
30
¾
¾
300
¾
¾
¾
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage VCE(SAT) ¾0.20
0.30 VIC= 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage VBE(SAT) 0.65
¾
0.85
0.95 VIC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ¾4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance Cibo ¾8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 1.0 10 kW
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio hre 0.5 8.0 x 10-4
Small Signal Current Gain hfe 100 400 ¾
Output Admittance hoe 1.0 40 mS
Current Gain-Bandwidth Product fT300 ¾MHz VCE = 20V, IC = 10mA,
f = 100MHz
Noise Figure NF ¾5.0 dB VCE = 5.0V, IC = 100mA,
RS = 1.0kW, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time td¾35 ns VCC = 3.0V, IC = 10mA,
VBE(off) = - 0.5V, IB1 = 1.0mA
Rise Time tr¾35 ns
Storage Time ts¾200 ns VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA
Fall Time tf¾50 ns
@ TA = 25°C unless otherwise specified
DS30379 Rev. 3 - 2 3 of 5 ASMCC0096
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Device Packaging Shipping
ASMCC0096-7 SOT-363 3000/Tape & Reel
ASMCC0096-13 SOT-363 10,000/Tape & Reel
Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Ordering Information (Note 3)
Marking Information
A96
YM
A96 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPR
ST U VW
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
DS30379 Rev. 3 - 2 4 of 5 ASMCC0096
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0.1
1
10
0.1 1 10 100 1000
V , BASE-EMITTER (V)
BE(SAT)
SATURATION VOLTAGE
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
(
Transistor Element
)
IC
IB=10
0.01
0.1
1
0.1 110 100 1000
V , COLLECTOR-EMITTER (V)
CE(SAT)
SATURATION VOLTAGE
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Typical Collector-Emitter
Saturation Voltage vs. Collector Current
(
Transistor Element
)
IC
IB=10
1
10
1000
100
0.1 110 1000
100
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
C
Fig. 3, Typical DC Current Gain vs
Collector Current
(
Transistor Element
)
T = -25°C
A
T = +25°C
A
T = 125°C
A
V = 1.0V
CE
0
5
1
5
10
0.1 110 100
C , INPUT CAPACITANCE (pF)
IBO
C , OUTPUT CAPACITANCE (pF)
OBO
V , COLLECTOR-BASE VOLTAGE (V)
CB
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
(
Transistor Element
)
Cibo
Cobo
f=1MHz
0
50
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Max Power Dissipation vs
Ambient Temperature
(
Total Device
)
100
150
200
0
MMBT3904 Section
DS30379 Rev. 3 - 2 5 of 5 ASMCC0096
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UDZ5V6B Section
00.2 0.4 0.6 0.8 1.2
1.0
I , INSTANTANEOUS FORWARD CURRENT (mA
)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fi
g
.6 T
y
pical Forward Characteristics
100
10
1.0
0.1
0.01
1000
