2N6605
2N6606
2N6607
2N6608
SILICON CONTROLLED RECTIFIER
0.35 AMP, 30 THRU 200 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6605 Series
types are hermetically sealed silicon controlled
rectifiers manufactured in a TO-18 case, designed for
control systems and sensing circuit applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6605 2N6606 2N6607 2N6608 UNITS
Peak Repetitive Off-State Voltage VDRM, VRRM 30 60 100 200 V
Average On-State Current IO 0.35 A
Peak One Cycle Surge Current (t=8.3ms) ITSM 6.0 A
Peak Gate Voltage VGM 8.0 V
Operating Junction Temperature TJ -40 to +125 °C
Storage Temperature Tstg -40 to +150 °C
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IDRM Rated VDRM, RGK=1.0KΩ 120 nA
IRRM Rated VRRM 250 nA
IGT VD=6.0V, RL=100Ω 200 μA
VGT VD=6.0V, RL=100Ω 0.8 V
VTM IT=2.0A 2.0 V
IH RGK=1.0KΩ 5.0 mA
R0 (30-March 2011)
www.centralsemi.com
2N6605
2N6606
2N6607
2N6608
SILICON CONTROLLED RECTIFIER
0.35 AMP, 30 THRU 200 VOLTS
TO-18 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Cathode
2) Gate
3) Anode
MARKING: FULL PART NUMBER
www.centralsemi.com
R0 (30-March 2011)
