BC 546 ... BC 549 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation - Verlustleistung 500 mW Plastic case Kunststoffgehause TO-92 (10D3) Weight approx. - Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard Pinning 1=C 2=B 3=E Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BC 546 BC 547 BC 548/549 Collector-Emitter-voltage B open VCE0 65 V 45 V 30 V Collector-Emitter-voltage B shorted VCES 85 V 50 V 30 V Collector-Base-voltage E open VCB0 80 V 50 V 30 V Emitter-Base-voltage C open VEB0 6V 6V 5V 1 Power dissipation - Verlustleistung Ptot 500 mW ) Collector current - Kollektorstrom (DC) IC 100 mA Peak Coll. current - Kollektor-Spitzenstrom ICM 200 mA Peak Base current - Basis-Spitzenstrom IBM 200 mA Peak Emitter current - Emitter-Spitzenstrom - IEM 200 mA Junction temp. - Sperrschichttemperatur Tj 150/C Storage temperature - Lagerungstemperatur TS - 65...+ 150/C Characteristics, Tj = 25/C Kennwerte, Tj = 25/C Group A Group B Group C DC current gain - Kollektor-Basis-Stromverhaltnis VCE = 5 V, IC = 10 :A hFE typ. 90 typ. 150 typ. 270 VCE = 5 V, IC = 2 mA hFE 110...220 200...450 420...800 VCE = 5 V, IC = 100 mA hFE typ. 120 typ. 200 typ.400 Small signal current gain - Stromverst. hfe typ. 220 typ. 330 typ. 600 Input impedance - Eingangsimpedanz hie 1.6...4.5 kS 3.2...8.5 kS 6...15 kS Output admittance - Ausgangsleitwert hoe 18 < 30 :S 30 < 60 :S 60 < 110 :S Reverse voltage transfer ratio Spannungsruckwirkung hre typ.1.5 *10-4 typ. 2 *10-4 typ. 3 *10-4 h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig, wenn die Anschludrahte in 2 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 6 01.11.2003 General Purpose Transistors BC 546 ... BC 549 Characteristics, Tj = 25/C Kennwerte, Tj = 25/C Min. Typ. Max. Collector saturation voltage - Kollektor-Sattigungsspannung IC = 10 mA, IB = 0.5 mA VCEsat - 80 mV 200 mV IC = 100 mA, IB = 5 mA VCEsat - 200 mV 600 mV IC = 10 mA, IB = 0.5 mA VBEsat - 700 mV - IC = 100 mA, IB = 5 mA VBEsat - 900 mV - Base saturation voltage - Basis-Sattigungsspannung Base-Emitter voltage - Basis-Emitter-Spannung VCE = 5 V, IC = 2 mA VBE 580 mV 660 mV 700 mV VCE = 5 V, IC = 10 mA VBE - - 720 mV Collector-Emitter cutoff current - Kollektorreststrom VCE = 80 V BC 546 ICES - 0.2 nA 15 nA VCE = 50 V BC 547 ICES - 0.2 nA 15 nA VCE = 30 V BC 548 ICES - 0.2 nA 15 nA VCE = 30 V BC 549 ICES - 0.2 nA 15 nA Collector-Emitter cutoff current - Kollektorreststrom VCE = 80 V, Tj = 125/C BC 546 ICES - - 4 :A VCE = 50 V, Tj = 125/C BC 547 ICES - - 4 :A VCE = 30 V, Tj = 125/C BC 548 ICES - - 4 :A VCE = 30 V, Tj = 125/C BC 549 ICES - - 4 :A fT - 300 MHz - CCB0 - 3.5 pF 6 pF CEB0 - 9 pF - Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat VEB = 0.5 V, f = 1 MHz Noise figure - Rauschma VCE = 5 V, IC = 200 :A BC 547 F - 2 dB 10 dB RG = 2 kS f = 1 kHz, BC 548 F - 1.2 dB 4 dB ) f = 200 Hz BC 549 F - 1.2 dB 4 dB Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Available current gain groups per type Lieferbare Stromverstarkungsgruppen pro Typ 250 K/W 1) RthA BC 556 ... BC 559 BC 546A BC 547A BC 548A BC 546B BC 547B BC 548B BC 549B BC 547C BC 548C BC 549C 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig, wenn die Anschludrahte in 2 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 01.11.2003 7