1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
601.11.2003
BC 546 ... BC 549 General Purpose Transistors
NPN Si-Epitaxial PlanarTransistors NPN
Power dissipation – Verlustleistung 500 mW
Plastic case TO-92
Kunststoffgehäuse (10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
BC 546 BC 547 BC 548/549
Collector-Emitter-voltage B open VCE0 65 V 45 V 30 V
Collector-Emitter-voltage B shorted VCES 85 V 50 V 30 V
Collector-Base-voltage E open VCB0 80 V 50 V 30 V
Emitter-Base-voltage C open VEB0 6 V 6 V 5 V
Power dissipation – Verlustleistung Ptot 500 mW 1)
Collector current – Kollektorstrom (DC) IC100 mA
Peak Coll. current – Kollektor-Spitzenstrom ICM 200 mA
Peak Base current – Basis-Spitzenstrom IBM 200 mA
Peak Emitter current – Emitter-Spitzenstrom - IEM 200 mA
Junction temp. – Sperrschichttemperatur Tj150/C
Storage temperature – Lagerungstemperatur TS- 65…+ 150/C
Characteristics, Tj = 25/C Kennwerte, Tj = 25/C
Group A Group B Group C
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 5 V, IC = 10 :Ah
FE typ. 90 typ. 150 typ. 270
VCE = 5 V, IC = 2 mA hFE 110...220 200...450 420...800
VCE = 5 V, IC = 100 mA hFE typ. 120 typ. 200 typ.400
h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz
Small signal current gain – Stromverst. hfe typ. 220 typ. 330 typ. 600
Input impedance – Eingangsimpedanz hie 1.6...4.5 kS3.2...8.5 kS6...15 kS
Output admittance – Ausgangsleitwert hoe 18 < 30 :S 30 < 60 :S 60 < 110 :S
Reverse voltage transfer ratio
Spannungsrückwirkung hre typ.1.5 *10-4 typ. 2 *10-4 typ. 3 *10-4
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
7
01.11.2003
General Purpose Transistors BC 546 ... BC 549
Characteristics, Tj = 25/C Kennwerte, Tj = 25/C
Min. Typ. Max.
Collector saturation voltage – Kollektor-Sättigungsspannung
IC = 10 mA, IB = 0.5 mA VCEsat – 80 mV 200 mV
IC = 100 mA, IB = 5 mA VCEsat – 200 mV 600 mV
Base saturation voltage – Basis-Sättigungsspannung
IC = 10 mA, IB = 0.5 mA VBEsat – 700 mV –
IC = 100 mA, IB = 5 mA VBEsat – 900 mV –
Base-Emitter voltage – Basis-Emitter-Spannung
VCE = 5 V, IC = 2 mA VBE 580 mV 660 mV 700 mV
VCE = 5 V, IC = 10 mA VBE – – 720 mV
Collector-Emitter cutoff current – Kollektorreststrom
VCE = 80 V BC 546 ICES – 0.2 nA 15 nA
VCE = 50 V BC 547 ICES – 0.2 nA 15 nA
VCE = 30 V BC 548 ICES – 0.2 nA 15 nA
VCE = 30 V BC 549 ICES – 0.2 nA 15 nA
Collector-Emitter cutoff current – Kollektorreststrom
VCE = 80 V, Tj = 125/C BC 546 ICES ––4 :A
VCE = 50 V, Tj = 125/C BC 547 ICES ––4 :A
VCE = 30 V, Tj = 125/C BC 548 ICES ––4 :A
VCE = 30 V, Tj = 125/C BC 549 ICES ––4 :A
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz fT– 300 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, f = 1 MHz CCB0 – 3.5 pF 6 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, f = 1 MHz CEB0 – 9 pF –
Noise figure – Rauschmaß
VCE = 5 V, IC = 200 :A BC 547 F – 2 dB 10 dB
RG = 2 kS f = 1 kHz, BC 548 F – 1.2 dB 4 dB
) f = 200 Hz BC 549 F – 1.2 dB 4 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 250 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren BC 556 ... BC 559
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
BC 546A
BC 547A
BC 548A
BC 546B
BC 547B
BC 548B
BC 549B
BC 547C
BC 548C
BC 549C