Order this document by 2N6027/D SEMICONDUCTOR TECHNICAL DATA Silicon Programmable Unijunction Transistors . . . designed to enable the engineer to "program" unijunction characteristics such as RBB, , IV, and IP by merely selecting two resistor values. Application includes thyristor-trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor applications due to the availability of an anode gate. Supplied in an inexpensive TO-92 plastic package for high-volume requirements, this package is readily adaptable for use in automatic insertion equipment. * * * * * Programmable -- RBB, , IV and IP. Low On-State Voltage -- 1.5 Volts Maximum @ IF = 50 mA Low Gate to Anode Leakage Current -- 10 nA Maximum High Peak Output Voltage -- 11 Volts Typical Low Offset Voltage -- 0.35 Volt Typical (RG = 10 k ohms) PUTs 40 VOLTS 300 mW G A K A GK CASE 29-04 (TO-226AA) STYLE 16 MAXIMUM RATINGS (TJ = 25C unless otherwise noted.) Rating Symbol Value Unit PF 1/JA 300 4 mW mW/C *DC Forward Anode Current Derate Above 25C IT 150 2.67 mA mA/C *DC Gate Current IG 50 mA *Power Dissipation Derate Above 25C Repetitive Peak Forward Current 100 s Pulse Width, 1% Duty Cycle *20 s Pulse Width, 1% Duty Cycle ITRM Non-repetitive Peak Forward Current 10 s Pulse Width ITSM 5 Amps *Gate to Cathode Forward Voltage VGKF 40 Volts *Gate to Cathode Reverse Voltage VGKR -5 Volts *Gate to Anode Reverse Voltage VGAR 40 Volts VAK 40 Volts TJ -50 to +100 C Tstg -55 to +150 C *Anode to Cathode Voltage(1) Operating Junction Temperature Range *Storage Temperature Range Amps 1 2 *Indicates JEDEC Registered Data 1. Anode positive, RGA = 1000 ohms Anode negative, RGA = open Thyristor Device Data Motorola Motorola, Inc. 1995 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic *Peak Current (VS = 10 Vdc, RG = 1 M) Fig. No. Symbol 2,9,11 IP Min Typ Max -- -- -- -- 1.25 0.08 4 0.70 2 0.15 5 1 0.2 0.2 0.2 0.70 0.50 0.35 1.6 0.6 0.6 -- -- 70 25 1.5 1 18 18 150 150 -- -- 50 25 -- -- -- -- -- -- 1 3 10 -- A 2N6027 2N6028 2N6027 2N6028 (VS = 10 Vdc, RG = 10 k ohms) *Offset Voltage (VS = 10 Vdc, RG = 1 M) 1 VT Volts 2N6027 2N6028 (Both Types) (VS = 10 Vdc, RG = 10 k ohms) *Valley Current (VS = 10 Vdc, RG = 1 M) 1,4,5 A IV 2N6027 2N6028 2N6027 2N6028 2N6027 2N6028 (VS = 10 Vdc, RG = 10 k ohms) (VS = 10 Vdc, RG = 200 ohms) Unit mA *Gate to Anode Leakage Current (VS = 40 Vdc, TA = 25C, Cathode Open) (VS = 40 Vdc, TA = 75C, Cathode Open) -- IGAO nAdc Gate to Cathode Leakage Current (VS = 40 Vdc, Anode to Cathode Shorted) -- IGKS -- 5 50 nAdc *Forward Voltage (IF = 50 mA Peak) 1,6 VF -- 0.8 1.5 Volts *Peak Output Voltage (VG = 20 Vdc, CC = 0.2 F) 3,7 Vo 6 11 -- Volt Pulse Voltage Rise Time (VB = 20 Vdc, CC = 0.2 F) 3 tr -- 40 80 ns *Indicates JEDEC Registered Data. FIGURE 1 - ELECTRICAL CHARACTERIZATION IA +VB IA A RG R2 * VS + R1 R1 ) R2 VB G VAK R1 + VAK + R1R1)R2R2 VA - VP VS RG VT = VP - VS VS K VF VV FIGURE 2 - PEAK CURRENT (IP) TEST CIRCUIT Adjust for Turn-on Threshold 100k 1.0% VB 0.01 F Scope 20 2 Put Under Test IV IF IA IC - Electrical Characteristics FIGURE 3 - Vo AND tr TEST CIRCUIT +VB -- IP (SENSE) 100 V = 1.0 nA + 2N5270 IP IGAO 1B - Equivalent Test Circuit for Figure 1A used for electrical characteristics testing (also see Figure 2) 1A - Programmable Unijunction with "Program" Resistors R1 and R2 +V 510 k 16 k Vo 6V R RG = R/2 CC VS = VB/2 (See Figure 1) vo 20 27 k 0.6 V tr t R Motorola Thyristor Device Data TYPICAL VALLEY CURRENT BEHAVIOR FIGURE 4 - EFFECT OF SUPPLY VOLTAGE FIGURE 5 - EFFECT OF TEMPERATURE 500 I V , VALLEY CURRENT ( A) IV , VALLEY CURRENT ( A) 1000 RG = 10 k 100 100 k 1 M RG = 10 k 100 100 k 1 M 10 10 5 10 15 VS, SUPPLY VOLTAGE (VOLTS) 5 20 -50 FIGURE 6 - FORWARD VOLTAGE V o , PEAK OUTPUT VOLTAGE (VOLTS) V F , PEAK FORWARD VOLTAGE (VOLTS) 25 TA = 25C 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IF, PEAK FORWARD CURRENT (AMP) +100 0 +25 +50 +75 TA, AMBIENT TEMPERATURE (C) FIGURE 7 - PEAK OUTPUT VOLTAGE 10 5.0 -25 2.0 CC = 0.2 F TA = 25C (SEE FIGURE 3) 20 15 10 1000 pF 5.0 0 5.0 0 5.0 10 15 20 25 30 VS, SUPPLY VOLTAGE (VOLTS) 35 40 FIGURE 8 PROGRAMMABLE UNIJUNCTION A E Circuit Symbol Motorola Thyristor Device Data RT R2 P N P N G K + B2 A + R1 ) R2 + R1 R1 ) R2 R BB G R1 R2 A G R1 CC K K B1 Equivalent Circuit with External "Program" Resistors R1 and R2 Typical Application 3 TYPICAL PEAK CURRENT BEHAVIOR 2N6027 FIGURE 9 - EFFECT OF SUPPLY VOLTAGE AND RG FIGURE 10 - EFFECT OF TEMPERATURE AND RG 100 10 50 I P , PEAK CURRENT ( A) I P , PEAK CURRENT ( A) 5.0 3.0 2.0 1.0 RG = 10 k 0.5 100 k 0.3 1.0 M 0.2 TA = 25C (SEE FIGURE 2) 20 VS = 10 VOLTS (SEE FIGURE 2) 10 5.0 2.0 1.0 RG = 10 k 0.5 100 k 1.0 M 0.2 0.1 5.0 10 15 VS, SUPPLY VOLTAGE (VOLTS) 0.1 -50 20 -25 0 +25 +50 TA, AMBIENT TEMPERATURE (C) +75 +100 2N6028 FIGURE 12 - EFFECT OF TEMPERATURE AND RG 1.0 10 0.7 0.5 50 RG = 10 k 100 k 0.3 0.2 I P , PEAK CURRENT ( A) I P , PEAK CURRENT ( A) FIGURE 11 - EFFECT OF SUPPLY VOLTAGE AND RG 0.1 0.07 0.05 1.0 M 0.03 TA = 25C (SEE FIGURE 2) 0.02 4 10 15 VS, SUPPLY VOLTAGE (VOLTS) 1.0 0.5 0.2 RG = 10 k 0.1 100 k 0.05 1.0 M 0.02 0.01 5.0 VS = 10 VOLTS (SEE FIGURE 2) 2.0 20 0.01 -50 -25 0 +25 +50 TA, AMBIENT TEMPERATURE (C) +75 +100 Motorola Thyristor Device Data PACKAGE DIMENSIONS A B R STYLE 16: PIN 1. 2. 3. 3. P L F SEATING PLANE K ANODE GATE CATHODE SOURCE D X X G J H V C SECTION X-X 1 N N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- CASE 029-04 (TO-226AA) Motorola Thyristor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 *2N6027/D* 2N6027/D Motorola Thyristor Device Data