1
Motorola Thyristor Device Data

 
Silicon Programmable Unijunction Transistors
. . . designed to enable the engineer to “program” unijunction characteristics such as
RBB, η, IV, and IP by merely selecting two resistor values. Application includes
thyristor-trigger, oscillator, pulse and timing circuits. These devices may also be used
in special thyristor applications due to the availability of an anode gate. Supplied in an
inexpensive TO-92 plastic package for high-volume requirements, this package is
readily adaptable for use in automatic insertion equipment.
Programmable — RBB, η, IV and IP.
Low On-State Voltage — 1.5 Volts Maximum @ IF = 50 mA
Low Gate to Anode Leakage Current — 10 nA Maximum
High Peak Output Voltage — 11 Volts Typical
Low Offset Voltage — 0.35 Volt Typical (RG = 10 k ohms)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating Symbol Value Unit
*Power Dissipation
Derate Above 25°CPF
1/θJA 300
4mW
mW/°C
*DC Forward Anode Current
Derate Above 25°CIT150
2.67 mA
mA/°C
*DC Gate Current IG±50 mA
Repetitive Peak Forward Current
100 µs Pulse Width, 1% Duty Cycle
*20 µs Pulse Width, 1% Duty Cycle
ITRM 1
2
Amps
Non-repetitive Peak Forward Current
10 µs Pulse Width ITSM 5 Amps
*Gate to Cathode Forward Voltage VGKF 40 Volts
*Gate to Cathode Reverse Voltage VGKR –5 Volts
*Gate to Anode Reverse Voltage VGAR 40 Volts
*Anode to Cathode Voltage(1) VAK ±40 Volts
Operating Junction Temperature Range TJ–50 to +100 °C
*Storage Temperature Range Tstg –55 to +150 °C
*Indicates JEDEC Registered Data
1. Anode positive, RGA = 1000 ohms
Anode negative, RGA = open
Order this document
by 2N6027/D

SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995


CASE 29-04
(TO-226AA)
STYLE 16
PUTs
40 VOLTS
300 mW
KA G
AGK
 
2Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Fig. No. Symbol Min Typ Max Unit
*Peak Current
(VS = 10 Vdc, RG = 1 M) 2N6027
2N6028
(VS = 10 Vdc, RG = 10 k ohms) 2N6027
2N6028
2,9,11 IP
1.25
0.08
4
0.70
2
0.15
5
1
µA
*Offset Voltage
(VS = 10 Vdc, RG = 1 M) 2N6027
2N6028
(VS = 10 Vdc, RG = 10 k ohms) (Both Types)
1 VT0.2
0.2
0.2
0.70
0.50
0.35
1.6
0.6
0.6
Volts
*Valley Current
(VS = 10 Vdc, RG = 1 M) 2N6027
2N6028
(VS = 10 Vdc, RG = 10 k ohms) 2N6027
2N6028
(VS = 10 Vdc, RG = 200 ohms) 2N6027
2N6028
1,4,5 IV
70
25
1.5
1
18
18
150
150
50
25
µA
mA
*Gate to Anode Leakage Current
(VS = 40 Vdc, TA = 25°C, Cathode Open)
(VS = 40 Vdc, TA = 75°C, Cathode Open)
IGAO
1
310
nAdc
Gate to Cathode Leakage Current
(VS = 40 Vdc, Anode to Cathode Shorted) IGKS 5 50 nAdc
*Forward Voltage (IF = 50 mA Peak) 1,6 VF 0.8 1.5 Volts
*Peak Output Voltage
(VG = 20 Vdc, CC = 0.2 µF) 3,7 Vo6 11 Volt
Pulse Voltage Rise Time
(VB = 20 Vdc, CC = 0.2 µF) 3 tr 40 80 ns
*Indicates JEDEC Registered Data.
R2
+VB
IAAG
R1
K
VAK
RG = R/2
VS = VB/2
(See Figure 1)
20 R
Put
Under
Test
VB
Scope 0.01
µ
F
2N5270
+
100k
1.0%
Adjust
for
Turn-on
Threshold
R
VAK VS
RG
IA
1B – Equivalent Test Circuit for
Figure 1A used for electrical
characteristics testing
(also see Figure 2)
CC
20
+VB
510 k
vo27 k
16 k Vo
6 V
0.6 V
+V
trt
*
VS
+
R1
R1
)
R2 VB
1A – Programmable Unijunction
with “Program” Resistors
R1 and R2
RG
+
R1 R2
R1
)
R2
IP(SENSE)
100
µ
V = 1.0 nA
FIGURE 1 – ELECTRICAL CHARACTERIZATION
FIGURE 2 – PEAK CURRENT (IP) TEST CIRCUIT FIGURE 3 – Vo AND tr TEST CIRCUIT
+
IA
IF
IV
IP
VT = VP – VS
VS
VV
– VP
VF
VA
IGAO IC – Electrical Characteristics
 
3
Motorola Thyristor Device Data
+
0.01
5.0
0.02
0.05
0.5
0.1
0.2
1.0
2.0
2.00.01
10
0.02 0.05 0.1 0.2 0.5 1.0 5.0
IF, PEAK FORWARD CURRENT (AMP)
TA = 25
°
C
1 M
100 k
15
RG = 10 k
5 10 20
10
100
1000
20
0
VS, SUPPLY VOLTAGE (VOLTS)
5.0
10
15
35
25
0 5.0 10 15 20 25 30 40
1000 pF
TA = 25
°
C
(SEE FIGURE 3)
–25
100
0–50 +25 +50 +75
5
10
VS, SUPPLY VOLTAGE (VOLTS)
+100
500
1 M
100 k
TA, AMBIENT TEMPERATURE (
°
C)
N
Equivalent Circuit
with External “Program”
Resistors R1 and R2
P
N
PR2
B2
R1
G
B1
K
A
E
A
G
K
Circuit Symbol
CCR1
R2
RT
A G
Typical Application
K
η
+
R1
R1
)
R2
CC = 0.2
µ
F
RG = 10 k
, VALLEY CURRENT ( A)IV
µ
, VALLEY CURRENT ( A)
IV
µ
, PEAK OUTPUT VOLTAGE (VOLTS)
Vo
, PEAK FORWARD VOLTAGE (VOLTS)VF
TYPICAL VALLEY CURRENT BEHAVIOR
FIGURE 4 – EFFECT OF SUPPLY VOLTAGE FIGURE 5 – EFFECT OF TEMPERATURE
FIGURE 6 – FORWARD VOLTAGE FIGURE 7 – PEAK OUTPUT VOLTAGE
FIGURE 8
PROGRAMMABLE UNIJUNCTION
RBB
+
R1
)
R2
 
4Motorola Thyristor Device Data
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1 5.0 10 2015
VS, SUPPLY VOLTAGE (VOLTS)
1.0 M
100 k
RG = 10 k
VS = 10 VOLTS
(SEE FIGURE 2)
10
0.1
0.2
0.5
1.0
2.0
5.0
20
50
+75
100
–50 –25 0 +50 +100+25
1.0 M
1.0
0.2
10
50
2.0
0.5
0.1
0–25 +25 +50 +75 +100–50
VS = 10 VOLTS
(SEE FIGURE 2)
TA, AMBIENT TEMPERATURE (
°
C)
0.05
0.01
0.02
0.03
0.7
0.07
0.1
0.2
0.3
0.5
1.0
RG = 10 k
15 0.01
0.02
0.05
5.0
1.0 M
TA, AMBIENT TEMPERATURE (
°
C)
VS, SUPPLY VOLTAGE (VOLTS) 2010
TA = 25
°
C
(SEE FIGURE 2)
100 k
TA = 25
°
C
(SEE FIGURE 2)
100 k
1.0 M
P
I , PEAK CURRENT ( A)
µ
P
I , PEAK CURRENT ( A)
µ
P
I , PEAK CURRENT ( A)
µ
P
I , PEAK CURRENT ( A)
µ
TYPICAL PEAK CURRENT BEHAVIOR
FIGURE 9 – EFFECT OF SUPPLY VOLTAGE AND RGFIGURE 10 – EFFECT OF TEMPERATURE AND RG
2N6027
2N6028
FIGURE 11 – EFFECT OF SUPPLY VOLTAGE AND RGFIGURE 12 – EFFECT OF TEMPERATURE AND RG
100 k
RG = 10 k
RG = 10 k
 
5
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
STYLE 16:
PIN 1. ANODE
2. GATE
3. CATHODE
3. SOURCE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION X–X
C
V
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
CASE 029–04
(TO–226AA)
1
 
6Motorola Thyristor Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customers technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer .
Literature Distribution Centers:
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.
JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
2N6027/D
*2N6027/D*