TISP4072F3LM THRU TISP4082F3LM,
TISP4125F3LM THRU TISP4180F3LM,
TISP4240F3LM THRU TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxF3LM Overvoltage Protector Series
NOVEMBER 1997 - REVISED JANUARY 2010
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
LM Package (Top View)
*RoHS COMPLIANT
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Rated for International Surge Wave Shapes Device Symbol
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
fl ash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring to Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping un-
til the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes
the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as
the diverted current subsides.
How to Order
Device VDRM
V
V(BO)
V
‘4072 58 72
‘4082 66 82
‘4125 100 125
‘4150 120 150
‘4180 145 180
‘4240 180 240
‘4260 200 260
‘4290 220 290
‘4320 240 320
‘4380 270 380
Waveshape Standard ITSP
A
10/160 μs FCC Part 68 60
0.5/700 μs I3124 38
10/700 μs ITU-T K.20/21 50
10/560 μs FCC Part 68 45
10/1000 μs REA PE-60 35
................................................UL Recognized Component
NC - No internal connection on pin 2
NC
T(A)
R(B)
MD4XAT
1
2
3
LMF Package (LM Package with Formed Leads) (Top View)
NC - No internal connection on pin 2
NC
T(A)
R(B)
MD4XAKB
1
2
3
T
RSD4XAA
Terminals T and R correspond to the
alternative line designators of A and B
Device Package Carrier
TISP4xxxF3LM Straight Lead DO-92 (LM) Bulk Pack
Tape and Reeled
Formed Lead DO-92 (LMF) Tape and Reeled
TISP4xxxF3LM-S
TISP4xxxF3LMR-S
TISP4xxxF3LMFR-S
Insert xxx value corresponding to protection voltages of 072, 082, 125 etc.
Order As
Models TISP4072F3LMF, TISP4125F3LM, TISP4180F3LMF,
TISP4180F3LM, and TISP4290F3LMF are currently available,
although not recommended for new designs.
NOVEMBER 1997 - REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
TISP4xxxF3LM Overvoltage Protector Series
Description (Continued)
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
This TISP4xxxF3LM range consists of ten voltage variants to meet various maximum system voltage levels (58 V to 270 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are supplied
in a DO-92 (LM) cylindrical plastic package. The TISP4xxxF3LM is a straight lead DO-92 supplied in bulk pack and on tape and reeled. The
TISP4xxxF3LMF is a formed lead DO-92 supplied only on tape and reeled.
Rating Symbol Value Unit
Repetitive peak off-state voltage (0 °C < TJ < 70 °C)
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
VDRM
± 58
± 66
± 100
± 120
± 145
± 180
± 200
± 220
± 240
± 270
V
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
ITSP A
2/10 µs (FCC Part 68, 2/10 µs voltage wave shape) excluding ‘4072 - ‘4082 175
8/20 µs (ANSI C62.41, 1.2/50 µs voltage wave shape) excluding ‘4072 - ‘4082 120
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 60
5/200 µs (VDE 0433, 2 kV, 10/700 µs voltage wave shape) 50
0.2/310 µs (I3124, 1.5 kV, 0.5/700 µs voltage wave shape) 38
5/310 µs (ITU-T K.20/21, 1.5 kV, 10/700 µs voltage wave shape) 38
5/310 µs (FTZ R12, 2 kV, 10/700 µs voltage wave shape) 50
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 45
10/1000 µs (REA PE-60, 10/1000 µs voltage wave shape) 35
2/10 µs (FCC Part 68, 2/10 µs voltage wave shape) ‘4072 - ‘4082 only 80
8/20 µs (ANSI C62.41, 1.2/50 µs voltage wave shape) ‘4072 - ‘4082 only 70
Non-repetitive peak on-state current (see Notes 2 and 3) ITSM 4A
50/60 Hz, 1 s
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A diT/dt 250 A/µs
Junction temperature TJ-40 to +150 °C
Storage temperature range Tstg -55 to +150 °C
NOTES: 1. Initially the TISP must be in thermal equilibrium with 0 °C<T
J<70°C.
2. The surge may be repeated after the TISP returns to its initial conditions.
3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.
NOVEMBER 1997 - REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
TISP4xxxF3LM Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Thermal Characteristics
Parameter Test Conditions Min Typ Max Unit
RΘJA Junction to free air thermal resistance EIA/JESD51-3 PCB mounted in an EIA/
JESD51-2 enclosure 120 °C/W
Parameter Test Conditions Min Typ Max Unit
IDRM
Repetitive peak off-
state current VD = ±VDRM, 0 °C < TJ < 70 °C±10 A
V(BO) Breakover voltage dv/dt = ±250 V/ms, RSOURCE = 300
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
±72
±82
±125
±150
±180
±240
±260
±290
±320
±380
V
V(BO)
Impulse breakover
voltage
dv/dt = ±1000 RSOURCE = 50
di/dt < 20 A/μs
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
±86
±96
±143
±168
±198
±267
±287
±317
±347
±407
V
I(BO) Breakover current dv/dt = ±250 V/ms, RSOURCE = 300 ±0.15 ±0.6 A
VTOn-state voltage IT=±5A, tW= 100 μs±3V
IHHolding current IT=±5A, di/dt=-/+30mA/ms ±0.15 A
dv/dt Critical rate of rise of
off-state voltage Linear voltage ramp, Maximum ramp value < 0.85VDRM ±5kV
IDOff-state current VD=±50 V ±10 A
Coff Off-state capacitance
f = 100 kHz, Vd=1V r.m.s., VD=0,
f = 100 kHz, Vd=1V r.m.s., VD=-50V
‘4072 - ‘4082
‘4125 - ‘4180
‘4240 - ‘4380
‘4072 - ‘4082
‘4125 - ‘4180
‘4240 - ‘4380
63
43
44
25
15
11
108
74
74
40
25
20
pF
NOVEMBER 1997 - REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
TISP4xxxF3LM Overvoltage Protector Series
Parameter Measurement Information
Figure 1. Voltage-Current Characteristic for R and T Terminals
All Measurements are Referenced to the T Terminal
-v
VDRM
IDRM
VD
IH
IT
VT
ITSM
ITSP
V(BO)
I(BO)
ID
Quadrant I
Switching
Characteristic
+v
+i
V(BO)
I(BO)
VDRM
IDRM
VD
ID
IH
IT
VT
ITSM
ITSP
-i
Quadrant III
Switching
Characteristic PMXXAAB
TISP4xxxF3LM Overvoltage Protector Series
TISP4xxxF3LM Overvoltage Protector Series
Typical Characteristics
NOVEMBER 1997 - REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
TISP4xxxF3LM Overvoltage Protector Series
Figure 2. Figure 3.
Figure 4. Figure 5.
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
ID - Off-State Current - µA
0·001
0·01
0·1
1
10
100 TC4XAA
VD = -50 V
VD = 50 V
TAMIN - Minimum Ambient Temperature - °C
-40 -35 -30 -25 -20 -15 -10 -5 0
Derating Factor
0.95
0.96
0.97
0.98
0.99
1.00 TC4X AB
'4125
THRU
'4180
'4072
AND
'4082
'4240
THRU
'4380
VT - On-State Voltage - V
2345678911
IT - On-State Curren t - A
1
10
100 TC3MAL
-40°C
150°C
25°C
TA - Ambient Temperature - °C
-25 0 25 50 75 100 125 150
V(BO) Normalized to 25 °C Value
0.9
1.0
1.1
TC4XAC
'4240
THRU
'4380
'4072
AND
'4082
'4125
THRU
'4180
'4240
THRU
'4380
'4072
AND
'4082
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalized Holding Current
0.4
0.5
0.6
0.7
0.8
0.9
1.5
2.0
1.0
TC4XAD
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
NORMALIZED V(BO)
vs
AMBIENT TEMPERATURE
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
Figure 6. Figure 7.
Figure 8. Figure 9.
di/dt - Rate of Rise of Principal Current - A/µs
0·001 0·01 0·1 1 10 100
Normalized Breakover Voltage
1.0
1.1
1.2
1.3 TC4X AE
'4240
THRU
'4380
'4072
AND
'4082
'4125
THRU
'4180
POSITIVE POLARITY
di/dt - Rate of Rise of Principal Current - A/µs
0·001 0·01 0·1 1 10 100
Normalized Breakover Voltage
1.0
1.1
1.2
1.3 TC4X AF
'4240
THRU
'4380
'4072
AND
'4082
'4125
THRU
'4180
NEGATIVE POLARITY
Terminal Voltage - V
0·1 1 10
Off-State Capacitance - pF
20
30
40
50
60
70
80
90
10
100
TC4XAG
50
'4240
THRU
'4380
'4072
AND
'4082
'4125
THRU
'4180
POSITIVE POLARITY
Terminal Voltage - V
0·1 1 10
Off-State Capacitance - pF
20
30
40
50
60
70
80
90
10
100
TC4XAH
50
'4240
THRU
'4380
'4072
AND
'4082
'4125
THRU
'4180
NEGATIVE POLARITY
NORMALIZED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
NORMALIZED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
OFF-STATE CAPACITANCE
vs
TERMINAL VOLTAGE
OFF-STATE CAPACITANCE
vs
TERMINAL VOLTAGE
TISP4xxxF3LM Overvoltage Protector Series
Typical Characteristics
NOVEMBER 1997 - REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
NOVEMBER 1997 - REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
TISP4xxxF3LM Overvoltage Protector Series
Typical Characteristics
Figure 10.
t - Current Duration - s
0·1 1 10 100 1000
ITSM(t) - Non-Repetitive Peak On-State Current - A
2
3
4
5
6
7
8
9
1
10 TI4LAAA
VGEN = 600 Vrms, 50/60 Hz
RGEN(t) = 1.4*VGEN / ITSM(t)
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
TISP4xxxF3LM Overvoltage Protector Series
MECHANICAL DATA
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Offi ce.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
NOVEMBER 1997 - REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
Device Symbolization Code
Devices will be coded as below.
Device Symbolization Code
TISP4072F3 4072F3
TISP4082F3 4082F3
TISP4125F3 4125F3
TISP4150F3 4150F3
TISP4180F3 4180F3
TISP4240F3 4240F3
TISP4260F3 4260F3
TISP4290F3 4290F3
TISP4320F3 4320F3
TISP4380F3 4380F3
Carrier Information
Devices are shipped in one of the carriers below. A reel contains 2,000 devices.
Device Package Carrier
TISP4xxxF3LM Straight Lead DO-92 (LM) Bulk Pack
Tape and Reeled
Formed Lead DO-92 (LMF) Tape and Reeled
TISP4xxxF3LM-S
TISP4xxxF3LMR-S
TISP4xxxF3LMFR-S
Insert xxx value corresponding to protection voltages of 072, 082, 125 etc.
Order As
