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Dear Customer,
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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1. Product profile
1.1 General description
PNP medium power transistor series in Surfa ce-Mounte d Device (SMD) plastic p ackages.
[1] Valid for all available selection groups.
1.2 Features and benefits
High current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plas tic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
1.4 Quick reference data
BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
Rev. 7 — 12 October 2011 Product data sheet
Table 1. Product overview
Type number[1] Package NPN complement
NXP JEITA JEDEC
BCP69 SOT223 SC-73 - BCP68
BC869 SOT89 SC-62 TO-243 BC868
BC69PA SOT1061 - - BC68PA
Linear voltage regulators Power management
High-side switches MOSFET drivers
Battery-driven devices Amplifiers
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 20 V
ICcollector current - - 2A
ICM peak collector current single pulse; tp1ms - - 3A
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 2 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
[1] Pulse test: tp300 s; = 0.02.
2. Pinning information
hFE DC current gain VCE =1V;
IC=500 mA [1] 85 - 375
hFE selection -16 VCE =1V;
IC=500 mA [1] 100 - 250
hFE selection -25 VCE =1V;
IC=500 mA [1] 160 - 375
Table 2. Quick reference data …continued
Symbol Parameter Conditions Min Typ Max Unit
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
SOT223
1base
2 collector
3emitter
4 collector
SOT89
1emitter
2 collector
3base
SOT1061
1base
2emitter
3 collector
132
4
sym028
2, 4
3
1
321
006aaa231
2
1
3
Transparent top view
12
3
sym013
3
2
1
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 3 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
3. Ordering information
[1] Valid for all available selection groups.
4. Marking
Tabl e 4. Ordering information
Type number[1] Package
Name Description Version
BCP69 SC-73 plastic surface-mounted package with increased
heatsink; 4 leads SOT223
BC869 SC-62 plastic surface-mounted package; exposed die pad for
good heat transfer; 3 leads SOT89
BC69PA HUSON3 plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 2 20.65 mm SOT1061
Table 5. Marking codes
Type number Marking code
BCP69 BCP69
BCP69-16 BCP69/16
BCP69-25 BCP69/25
BC869 CEC
BC869-16 CGC
BC869-25 CHC
BC69PA B3
BC69-16PA BM
BC69-25PA BN
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 4 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 32 V
VCEO collector-emitter voltage open base - 20 V
VEBO emitter-base voltage open collector - 5V
ICcollector current - 2A
ICM peak collector current single pulse;
tp1ms -3A
IBbase current - 0.4 A
IBM peak base current single pulse;
tp1ms -0.4 A
Ptot total power dissipation Tamb 25 C
BCP69 [1] -0.65W
[2] -1.00W
[3] -1.35W
BC869 [1] -0.50W
[2] -0.95W
[3] -1.35W
BC69PA [1] -0.42W
[2] -0.83W
[3] -1.10W
[4] -0.81W
[5] -1.65W
Tjjunction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 5 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves SOT223 Fig 2. Power derating curves SOT89
(1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
(2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm2
(3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm2
(4) FR4 PCB, 4-layer copper, standard footprint
(5) FR4 PCB, single-sided copper, standard footprint
Fig 3. Power derating curves S OT 10 6 1
Tamb (°C)
–75 17512525 75–25
006aac674
0.5
1.0
1.5
Ptot
(W)
0.0
(1)
(2)
(3)
Tamb (°C)
–75 17512525 75–25
006aac675
0.5
1.0
1.5
Ptot
(W)
0.0
(1)
(2)
(3)
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 6 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
Table 7. Thermal characteris tics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air
BCP69 [1] --192K/W
[2] --125K/W
[3] --93K/W
BC869 [1] --250K/W
[2] --132K/W
[3] --93K/W
BC69PA [1] --298K/W
[2] --151K/W
[3] --114K/W
[4] --154K/W
[5] --76K/W
Rth(j-sp) thermal resistance from
junction to solder poi nt
BCP69 - - 16 K/W
BC869 - - 16 K/W
BC69PA - - 20 K/W
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 7 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junc tio n to ambient as a function of pulse duration for SO T223;
typical values
FR4 PCB, mounting pad for collector 1 cm2
Fig 5. Transient thermal impedance from junc tio n to ambient as a function of pulse duration for SO T223;
typical values
006aac677
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
006aac678
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 8 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
FR4 PCB, mounting pad for collector 6 cm2
Fig 6. Transient thermal impedance from junc tio n to ambient as a function of pulse duration for SO T223;
typical values
FR4 PCB, standard footprint
Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
006aac679
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
006aac680
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 9 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
FR4 PCB, mounting pad for collector 1 cm2
Fig 8. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
FR4 PCB, mounting pad for collector 6 cm2
Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
006aac681
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.02
0.05 0.1
0.2 0.33
0.5 0.75
006aac682
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1
0.2 0.33
0.5 0.75
0.02
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 10 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
FR4 PCB, single-sided copper, standard footprint
Fig 10. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
FR4 PCB, single-sided copper, mounting pad for collector 1 cm2
Fig 11. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
006aac683
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
006aac684
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 11 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
FR4 PCB, single-sided copper, mounting pad for collector 6 cm2
Fig 12. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
FR4 PCB, 4-layer copper, standard footprint
Fig 13. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
006aac685
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
006aac686
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 12 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
006aac687
10
1
102
103
Zth(j-a)
(K/W)
10–1
10–5 1010–2
10–4 102
10–1 tp (s)
10–3 103
1
0
duty cycle = 1
0.01
0.05
0.1 0.2
0.33
0.5 0.75
0.02
0.25
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 13 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
7. Characteristics
[1] Pulse test: tp300 s; = 0.02.
Table 8. Characteristics
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off
current VCB =25 V; IE=0A - - 100 nA
VCB =25 V; IE=0A;
Tj= 150 C--10 A
IEBO emitter-base cut-of f
current VEB =5V; I
C=0A - - 100 nA
hFE DC current gain VCE =10 V
IC=5mA 50 - -
DC current ga in VCE =1V
IC=500 mA [1] 85 - 375
IC=1A [1] 60 - -
IC=2A [1] 40 - -
DC current ga in VCE =1V
hFE selection -16 IC=500 mA [1] 100 - 250
hFE selection -25 IC=500 mA [1] 160 - 375
VCEsat collector-emitter
saturation voltage IC=1A; I
B=100 mA [1] --0.5 V
IC=2A; I
B=200 mA [1] 0.6 V
VBE base-emitter vo ltage VCE =10 V; IC=5mA [1] --0.7 V
VCE =1V; I
C=1A [1] --1V
Cccollector capacitance VCB =10 V; IE=i
e=0A;
f=1MHz -28-pF
fTtransition frequency VCE =5V; I
C=50 mA;
f=100MHz 40 140 - MHz
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 14 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
VCE =1V
(1) Tamb = 100 C
(2) Tamb =25C
(3) Tamb =55 C
Tamb =25C
Fig 15. hFE selection -16: DC current gain as a
function of collector current; typical values Fig 16. hFE selection -16: collector current as a
function of collector-emitter voltage; typical
values
VCE =1V
(1) Tamb =55 C
(2) Tamb =25C
(3) Tamb = 100 C
IC/IB=10
(1) Tamb = 100 C
(2) Tamb =25C
(3) Tamb =55 C
Fig 17. hFE selecti on -16: bas e-emitter voltage as a
function of collector current; typical values Fig 18. hFE selection -16: collector-emitter saturation
voltage as a function of collect or cur r e nt;
typical values
006aac697
100
200
300
hFE
0
IC (A)
-10-4 -10-1-10-3 -10-1
-10-2
(1)
(2)
(3)
006aab403
0
I
C
(A)
V
CE
(V)
−2.4
−1.6
−2.0
−0.8
−1.2
−0.4
0
−1−5
−2−3−4
I
B
(mA) = −18.0
−16.2
−3.6
−5.4
−7.2
−9.0
−14.4
−12.6
−10.8
−1.8
006aac698
-0.4
-0.8
-1.2
VBE
(V)
0.0
IC (mA)
-10-1 -104
-103
-1 -102
-10
(1)
(2)
(3)
006aac699
-10-1
-10-2
-1
VCEsat
(V)
-10-3
IC (mA)
-10-1 -104
-103
-1 -102
-10
(1)
(2)
(3)
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 15 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
VCE =1V
(1) Tamb = 100 C
(2) Tamb =25C
(3) Tamb =55 C
Tamb =25C
Fig 19. hFE selection -25: DC current gain as a
function of collector current; typical values Fig 20. hFE selection -25: collector current as a
function of collector-emitter voltage; typical
values
VCE =1V
(1) Tamb =55 C
(2) Tamb =25C
(3) Tamb = 100 C
IC/IB=10
(1) Tamb = 100 C
(2) Tamb =25C
(3) Tamb =55 C
Fig 21. hFE selecti on -25: bas e-emitter voltage as a
function of collector current; typical values Fig 22. hFE selection -25: collector-emitter saturation
voltage as a function of collect or cur r e nt;
typical values
006aac707
200
100
300
400
hFE
0
IC (A)
-10-4 -10-1-10-3 -10-1
-10-2
(1)
(2)
(3)
006aab404
0
I
C
(A)
V
CE
(V)
−2.4
−2.0
−1.6
−1.2
−0.8
−0.4
0
−1−5
−2−3−4
I
B
(mA) = −12.0
−10.8
−2.4
−3.6
−4.8
−6.0
−1.2
−9.6 −8.4
−7.2
006aac708
-0.4
-0.8
-1.2
VBE
(V)
0.0
IC (mA)
-10-1 -104
-103
-1 -102
-10
(1)
(2)
(3)
006aac709
–10–1
–10–2
–1
VCEsat
(V)
–10–3
IC (mA)
–10–1 –104
–103
–1 –102
–10
(1)
(2)
(3)
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 16 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
Fig 23. Package outline SOT223 (SC-73)
Fig 24. Package outline SOT89 (SC-62/TO-243)
04-11-10Dimensions in mm
6.7
6.3
3.1
2.9
1.8
1.5
7.3
6.7 3.7
3.3
1.1
0.7
132
4
4.6
2.3 0.8
0.6 0.32
0.22
06-08-29Dimensions in mm
4.6
4.4
1.8
1.4
1.6
1.4
1.2
0.8
3
1.5 0.48
0.35 0.44
0.23
0.53
0.40
2.6
2.4 4.25
3.75
123
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 17 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
[2] Valid for all available selection groups.
[3] T1: normal taping
[4] T3: 90 rotated taping
Fig 25. Package outline SOT1061 (HUSON3)
09-11-12Dimensions in mm
0.65
max
2.1
1.9
1.6
1.4
0.35
0.25 0.45
0.35
2.1
1.9
1.1
0.9
0.3
0.2
1.05
0.95
1.3
2
3
1
Table 9. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type
number[2] Package Description Packing quantity
1000 3000 4000
BCP69 SOT223 8 mm pitch, 12 mm tape and reel -115 - -135
BC869 SOT89 8 mm pitch, 12 mm tape and reel; T1 [3] -115 - -135
8 mm pitch, 12 mm tape and reel; T3 [4] -146 - -
BC69PA SOT1061 4 mm pitch, 8 mm tape and reel - -115 -
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 18 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
11. Soldering
Fig 26. Reflow soldering footprint SOT223 (SC-73)
Fig 27. Wave soldering footprint SOT223 (SC-73)
sot223_fr
1.2
(4×)
1.2
(3×)
1.3
(4×)
1.3
(3×)
6.15
7
3.85
3.6
3.5
0.3
3.9 7.65
2.3 2.3
6.1
4
231
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
sot223_fw
1.9
6.7
8.9
8.7
1.9
(3×)
1.9
(2×)
1.1
6.2
2.7 2.7
2
4
31
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 19 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
Fig 28. Reflow soldering footprint SOT89 (SC-62/TO-243)
Fig 29. Wave soldering footprint SOT89 (SC-62/TO-243)
solder lands
solder resist
occupied area
solder paste
sot089_fr
1.2
1.9
2
2.25
4.75
1
(3×)
0.7
(3×)
0.6
(3×)
1.1
(2×)
1.2
0.85 0.2
0.5
1.7
4.85
3.95
4.6
1.51.5
Dimensions in mm
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot089_fw
0.7
5.3
6.6
2.4
3.5
0.5
1.8
(2×)
1.5
(2×)
7.6
1.9 1.9
Dimensions in mm
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 20 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
Reflow soldering is the only recommended soldering method.
Fig 30. Reflow soldering footprint SOT1061 (HUSON3)
occupied area
solder paste = solder lands Dimensions in mm
sot1061_fr
solder resist
0.4
2.1
1.3
0.25
0.25 0.25
1.1 1.2
0.55
0.6
2.3
0.5 (2×)
0.5 (2×) 0.6 (2×)
0.4 (2×)
0.5
1.6
1.7
1.05
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 21 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
12. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BCP69_BC869_BC69PA v.7 20111012 Product data sheet - BC869_6
BCP69_6
Modifications: •The format of this document has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate.
•Type number BC69PA added
•Type number BCP69-16/DG and BCP69-16/IN removed
•Section 1 “Product profile”: updated
•Section 2 “Pinning informa tion”: updated
•Section 3 “Ordering information”: updated
•Section 4 “Marking”: updated
•Section 10 “Packing information”:updated
•Table 6, 7 and 8: updated according to latest measurements
•Figure 1, 15 to 18 updated
•Figure 2 to 14, 24 to 25, 28 to 30: added
BC869_6 20041108 Product data sheet - BC869_5
BC869_5 20031202 Product specification - BC869_4
BC869_4 19990408 Product specification - BC869_3
BC869_3 19980716 Product specification - BC869_CNV_2
BC869_CNV_2 19970401 Product specification - -
BCP69_6 20081202 Product data sheet - BCP69_5
BCP69_5 20031125 Product specification - BCP69_4
BCP69_4 20021115 Product specification - BCP69_3
BCP69_3 19990408 Product specification - BCP69_CNV_2
BCP69_CNV_2 19970312 Product specification - -
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 22 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specificat io n — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitatio n - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semicondu ctors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suit able for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability rela ted to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for th e customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter ms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or t he grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from competent authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objecti ve specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 23 of 24
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristi cs sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 October 2011
Document identifier: BCP69_BC869_BC69PA
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 6
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . 13
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 16
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . 16
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16
10 Packing information . . . . . . . . . . . . . . . . . . . . 17
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 21
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 22
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 22
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 22
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 23
14 Contact information. . . . . . . . . . . . . . . . . . . . . 23
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24