FEATURES
For general purpose applications
These diodes features very low turn-on voltage
and fast switching. These devices are protected
M ECHANI CAL DAT A
Case:JEDEC DO--35,glass case
Symbol
VR
IF
IFRM
IFSM
Ptot
Thermal resistance juntion to ambient air RθJA
TJ
TA
TSTG
Min. UNITS
100.0 V
Weight: Approx. 0.13 gram
VR = 0V,f=1MHz
VR = 10V,Tj=60
IR
VF
Junction tenperature
Ambient operating temperature range
Storage temperature range
Reverse breakdow n voltage
Repetitive peak reverse voltage
Forw ard continuius current @ tamb=25
Repetitive peak forw ard current @ tp<1s, <=0.5,TA=25
15.0
5.0
0.25
0.45
IF = 250mA 1.0
VR = 75V,Tj=60
IF = 0.1mA
IF = 10mA
20.0
V
mA
mA
mW
mA
voltage, such as electrostatic discharges
Pow er dissipation1) @ TA=65
These diodes is lso available in the SOD - 123 case
with type designation BAT46W and in the
MiniMELF case wyht type designations LL46
Surge forw ard current @ tp<10ms,TA=25
Parameter
ABS O LUT E RAT I NGS
UNITS
Polarity: Color band denotes cathode
Value
3001)
125
100.0
1501)
3501)
1501)
7501)
2.0
c-65 ---+ 150
EL ECT RI CAL CHARACT ERI S T ICS
Parameter Test Condition Typ.
Symbol
BA T 4 6
by a PN junction guard ring against excessive
SMALL SIG NAL SCHOTTKY DIODES VOLTAGE RANGE: 100 V
CURRENT: 0.15 A
DO - 35( GLASS)
G ALAXY EL ECTRICAL
VRIR = 100 A(pulsed)
/W
Max.
c-65 ---+ 125
VR = 50V
VR = 50V,Tj=60
VR = 75V
Leakage current
pulse test tp<300 s, <2%
0.5
5.0
0.8VR = 10V
VR = 1.5V,Tj=60
1) Valid prov ided that leads at a distance of 4mm f rom case are kept at ambient temperature
VR = 1.5V
aA
V
7.5
Forw ard voltage
pulse test tp<300 s, <2%
VR = 1V,f=1MHz 6
pF
10
CJ
Junction capacitance
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Document Number 0265008 1.
BLGALAXY ELECTRICAL