Issue 1 - January 2008 1 www.zetex.com
© Zetex Semiconductors plc 2008
ZXMN3F31DN8
30V SO8 dual N-channel enhancement mode MOSFET
Summary
Description
This new generation Trench MOSFET from Zetex features low on-
resistance achievable with 4.5V gate drive.
Features
• Low on-resistance
• 4.5V gate drive capability
Applications
• DC-DC Converters
• Power management functions
• Load switching
• Motor control
• Back lighting
Ordering information
Device marking
ZXMN
3F31D
V(BR)DSS RDS(on) (Ω)ID (A)
30 0.024 @ VGS= 10V 7.3
0.039 @ VGS= 4.5V 5.7
DEVICE Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMN3F31DN8TA 7 12 500
D2
S2
G2
D1
S1
G1
D1 S1
G1
S2
G2
D1
D2
D2
ZXMN3F31DN8
Issue 1 - January 2008 2 www.zetex.com
© Zetex Semiconductors plc 2008
Absolute maximum ratings
Thermal resistance
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300µs - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
(f) Thermal resistance from junction to solder-point (at end of drain lead).
Parameter Symbol Limit Unit
Drain source voltage VDSS 30 V
Gate source voltage VGS ±20 V
Continous Drain Current @ VGS=10; TA=25°C(b)
@ VGS=10; TA=70°C(b)
@ VGS=10; TA=25°C(a)
ID7.3
5.9
5.7
A
A
A
Pulsed drain current(c) IDM 33 A
Continuous source current (body diode)(b) IS3A
Pulsed source current (body diode)(c) ISM 33 A
Power dissipation at TA =25°C(a)(d)
Linear derating factor
PD1.25
10
W
mW/°C
Power dissipation at TA =25°C(a)(e)
Linear derating factor
PD1.8
14
W
mW/°C
Power dissipation at TA =25°C(b)(d)
Linear derating factor
PD2.1
17
W
mW/°C
Operating and storage temperature range Tj, Tstg
-55 to 150
°C
Parameter Symbol Limit Unit
Junction to ambient(a)(d) R⍜JA 100 °C/W
Junction to ambient(a)(e) R⍜JA 70 °C/W
Junction to ambient(b)(d) R⍜JA 60 °C/W
Junction to lead(f) R⍜JL 53 °C/W
ZXMN3F31DN8
Issue 1 - January 2008 3 www.zetex.com
© Zetex Semiconductors plc 2008
Thermal characteristics
ZXMN3F31DN8
Issue 1 - January 2008 4 www.zetex.com
© Zetex Semiconductors plc 2008
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-Source Breakdown
Voltage
V(BR)DSS 30 V ID= 250µA, VGS=0V
Zero Gate Voltage Drain
Current
IDSS 0.5 µAV
DS= 30V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS=±20V, VDS=0V
Gate-Source Threshold
Voltage
VGS(th) 1.0 3.0 V ID= 250µA, VDS=VGS
Static Drain-Source
On-State Resistance (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤2%.
RDS(on) 0.024
0.039
Ω
Ω
VGS= 10V, ID= 7.0A
VGS= 4.5V, ID= 6.0A
Forward
Transconductance(*)(†)
gfs 16.5 S VDS= 15V, ID= 7A
Dynamic (†)
(†) For design aid only, not subject to production testing
Input Capacitance Ciss 608 pF
VDS= 15V, VGS=0V
f=1MHz
Output Capacitance Coss 132 pF
Reverse Transfer
Capacitance
Crss 71 pF
Switching (‡)(†)
(‡) Switching characteristics are independent of operating junction temperature.
Tur n-On -Delay Time td(on) 2.9 ns
VDD= 15V, ID= 1A
RG ≅ 6.0Ω, VGS=10V
Rise Time tr 3.3 ns
Turn-Off Delay Time td(off) 16 ns
Fall Time tf8ns
Total Gate Charge Qg12.9 nC VDS= 15V, VGS= 10V
ID= 7A
Gate-Source Charge Qgs 2.5 nC
Gate Drain Charge Qgd 2.52 nC
Source-drain diode
Diode Forward Voltage(*) VSD 0.82 1.2 V Tj=25°C, IS= 1.7A,
VGS=0V
ZXMN3F31DN8
Issue 1 - January 2008 5 www.zetex.com
© Zetex Semiconductors plc 2008
Typical characteristics
ZXMN3F31DN8
Issue 1 - January 2008 6 www.zetex.com
© Zetex Semiconductors plc 2008
Test circuits
ZXMN3F31DN8
Issue 1 - January 2008 7 www.zetex.com
© Zetex Semiconductors plc 2008
Package outline - SO8
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
DIM Inches Millimeters DIM Inches Millimeters
Min. Max. Min. Max. Min. Max. Min. Max.
A 0.053 0.069 1.35 1.75 e 0.050 BSC 1.27 BSC
A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51
D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25
H 0.228 0.244 5.80 6.20 ⍜0° 8° 0° 8°
E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50
L 0.016 0.050 0.40 1.27 - - - - -
ZXMN3F31DN8
Issue 1 - January 2008 8 www.zetex.com
© Zetex Semiconductors plc 2008
Zetex sales offices
Europe
Zetex GmbH
Kustermann-park
Balanstraße 59
D-81541 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
© 2008 Published by Zetex Semiconductors plc
Definitions
Product change
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights
arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,
tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,
opportunity or consequential loss in the use of these circuit applications, under any circumstances.
Life support
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
Reproduction
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the
company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a
representation relating to the products or services concerned.
Terms and Conditions
All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two
when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.
Quality of product
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our
regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.
Devices suspected of being affected should be replaced.
Green compliance
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding reg-
ulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce
the use of hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with
WEEE and ELV directives.
Product status key:
“Preview” Future device intended for production at some point. Samples may be available
“Active” Product status recommended for new designs
“Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs”
Device is still in production to support existing designs and production
“Obsolete” Production has been discontinued
Datasheet status key:
“Draft version” This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
