VCE = 1700 V
IC= 150 A
Doc. No. 5SYA1536-00 Sep. 01
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Low-loss, rugged IGBT SPT
chip-set
•
EMC friendly diode w i th positive
temp. coefficient of on-state
•
Low profile compact baseless
package
•
Snap-on PCB assembly
•
Integrated PTC substrate
temperature sensor
•
Low thermal resistance version
Maximum Rated Values (Tvj = 25°C, unless specified otherwise)
Parameter Symbol Conditions Values Unit
Collector-Emitter Voltage VCES VGE shorted 1700 V
DC Collector Current ICThs = 85°C 150 A
Peak Collector Current ICM Pulse: tp=1ms, Ths = 85°C 300 A
Gate Emitter Voltage VGES ±20 V
Total Power Dissipation Ptot Ths = 25°C per switch 890 W
IGBT Switching SOA SwSOA
IC = 300 A, VCEM = 1700 V, VCC ≤ 1200 V,
VGE = ±15 V, Tvj =125°C
voltages measured on auxiliary terminals
IGBT Short Circuit SOA SCSOA VCC = 1200 V, VCEM = 1700 V, tp = 10 µs,
VGE = ±15 V, Tvj =125 °C
DC Forward Current IF150 A
Peak Forward Current IFM Pulse: tp = 1ms, Ths = 85°C 300 A
IGBT Module LoPak4 SPT
5SNS 0150V172100
MARKETING INFORMATION
5SNS 0150V172100
Maximum Rated Values (cont.) (Tvj = 25°C, unless specified otherwise)
Parameter Symbol Conditions Values Unit
Junction Temperature Tvj - 40 ~ 150 °C
Storage Temperature Ttstg/Tcop - 40 ~ 125 °C
Isolation Voltage Viso 1 min, f = 50Hz 4000 V
Base to Heatsink (M6) Hole 6.5mm diameter 2 ~ 3 Nm
Main Terminals M6 screws, max. insertion
depth :10mm 3 ~ 5 Nm
PCB mounting Self tapping screw, Hole
2.5mm diameter, 6.0mm deep
Mounting
Gate, Emitter Aux. Spring pins, pitch of pins =
4mm, pcb thickness = 1.6mm
IGBT Characteristic Values (Tvj = 25°C, unless specified otherwise)
Parameter Symbol Conditions min. typ. max. Unit
Tvj = 25 °C 2.40 2.80 V
Collector-Emitter
Saturation Voltage VCE(sat)*I
C = 150 A, VGE = 15 V Tvj = 125 °C 2.80 V
Collector Cut-off Current ICES VCE = 1700 V, VGE = 0 V, Tvj = 125 °C TBD mA
Gate-Emitter leakage
Current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C ±500 nA
Gate-Emitter Threshold
Voltage VGE(TO) IC = 20 mA, VCE = VGE 4.5 6.5 V
Total Gate Charge Qge IC = 150 A, VCE = 900 V, VGE = -15 to 15 V TBD nC
Input Capacitance Cies TBD nF
Output Capacitance Coes TBD nF
Reverse Transfer
Capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1MHz
TBD nF
Turn-On Delay Time td(on) TBD µs
Rise Time tr
IC = 150 A, VCC = 900 V,Rgon = 10 Ω,
Tvj = 125 °C, VGE = ±15 V TBD µs
Turn-Off Delay Time td(off) TBD µs
Fall Time tf
IC = 150 A, VCC = 900 V, Rgoff = 10 Ω,
Tvj = 125 °C,VGE = ±15 V TBD µs
Turn-on Switching Energy Eon Rgon = 10 Ω60.0 mJ
Turn-off Switching Energy Eoff Rgoff = 10 Ω
IC = 150 A, Tvj = 125 °C,
VCC = 900 V, VGE = ±15 V,
inductive load, integrated up
to: 3% VCE (Eon), 1% IC (Eoff)40.0 mJ
Module stray Inductance
Plus to Minus Ls DC 20 nH
Ths = 25 °C 1.40
Resistance terminal-chip RCC’+EE’ Ths = 125 °C 1.90 mΩ
* Note 1: Collector emitter saturation voltage is given at die level.
Doc.. No. 5SYA1536-00 Sep. 01 2 of 4
5SNS 0150V172100
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc.. No. 5SYA1536-00 Sep. 01 3 of 4
Diode Characteristic Values (Tvj = 25°C, unless specified otherwise)
Parameter Symbol Conditions min. typ. max. Unit
Tvj = 25 °C 1.90 2.30
Forward Voltage VF*I
F = 150 A Tvj = 125 °C 2.00 V
Reverse Recovery Current Irrm TBD A
Reverse Recovery Charge Qrr TBD µC
Reverse Recovery Time trr
IF = 150 A, Rgon = 10 Ω,
VCC = 900 V,
VGE = ±15 V, Tvj = 125 °C TBD µs
Reverse Recovery Energy Erec
IF = 150 A, Tvj = 125 °C, VCC = 900 V,
Rgon = 10 Ω, VGE = ±15 V,
inductive load, fully integrated
24.0 mJ
Ths = 25 °C 1.40
Resistance terminal-chip RCC’+EE’ Ths = 125 °C 1.90 mΩ
* Note 2: Forward voltage is given at die level
Thermal Characteristics (Tj = 25°C, unless specified otherwise)
Parameter Symbol Conditions min. typ. max. Unit
IGBT Thermal Resistance
Junction to Heatsink
Rth j-h
Igbt 0.140 °C/W
Diode Thermal Resistance
Junction to Heatsink
Rth j-h
Diode 0.250 °C/W
Equivalent IGBT Thermal
Resistance Junct. to Case
Rth j-c
Igbt 0.065 °C/W
Equivalent Diode Thermal
Resistance Junct. to Case
Rth j-c
Diode
Heatsink:
flatness < +/- 50 µm,
roughness < 6 µm without ridge
Thermal grease:
thickness: 30 µm < t < 50 µm
0.125 °C/W
Temperature sensor PTC Thermistor : R=1kΩ ±3%@25°C,B-value (25°C/100°C): -760K ±2%
Mechanical Properties
Parameter Symbol Conditions min. typ. max. Unit
Dimensions L* W* H Typical , see outline drawing 184.5 * 106.5 * 34.5 mm
Term. to base: 13.5 mm
Clearance Distance DC
acc. IEC 664-1 and
prEN50124-1:1995 Term. to term: 8 mm
Term. to base: 14 mm
Surface Creepage
Distance DSC
acc. IEC 664-1 and
prEN50124-1:1995 Term. to term: 11.5 mm
Weight 330 gr
5SNS 0150V172100
Electri cal confi guration
Outline drawing
ABB Semiconductors reserves the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email Info@ch.abb.com
Internet www.abbsem.com
Doc. No. 5SYA1536-00 Sep. 01
