VS-130-160MT..KPbF Series
www.vishay.com Vishay Semiconductors
Revision: 17-Aug-17 1Document Number: 94354
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Three Phase Bridge, 130 A to 160 A
(Power Modules)
FEATURES
Package fully compatible with the industry
standard INT-A-PAK power modules series
High thermal conductivity package, electrically
insulated case
Excellent power volume ratio
4000 VRMS isolating voltage
UL E78996 approved
Designed and qualified for industrial level
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
A range of extremely compact, encapsulated three phase
bridge rectifiers offering efficient and reliable operation.
They are intended for use in general purpose and heavy duty
applications.
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IO 130 A to 160 A
VRRM 800 V to 1600 V
Package MTK
Circuit configuration Three phase bridge
MTK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES
130MT.K
VALUES
160MT.K UNITS
IO
130 (160) 160 (200) A
TC85 (62) 85 (60) °C
IFSM
50 Hz 1130 1430 A
60 Hz 1180 1500
I2t50 Hz 6400 10 200 A2s
60 Hz 5800 9300
I2t 64 000 102 000 A2s
VRRM Range 800 to 1600 V
TStg Range -40 to 150 °C
TJ-40 to 150
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ = MAXIMUM
mA
VS-130MT.K
VS-160MT.K
80 800 900
10
100 1000 1100
120 1200 1300
140 1400 1500
160 1600 1700
VS-130-160MT..KPbF Series
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Revision: 17-Aug-17 2Document Number: 94354
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES
130MT.K
VALUES
160MT.K UNITS
Maximum DC output current
at case temperature IO120° rect. conduction angle 130 (160) 160 (200) A
85 (62) 85 (60) °C
Maximum peak, one-cycle
forward, non-repetitive surge
current
IFSM
t = 10 ms No voltage
reapplied
Initial
TJ = TJ maximum
1130 1430
A
t = 8.3 ms 1180 1500
t = 10 ms 100 % VRRM
reapplied
950 1200
t = 8.3 ms 1000 1260
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
6400 10 200
A2s
t = 8.3 ms 5800 9300
t = 10 ms 100 % VRRM
reapplied
4500 7200
t = 8.3 ms 4100 6600
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 64 000 102 000 A2s
Low level value of
threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)),
TJ maximum 0.78 0.81
V
High level value of
threshold voltage VT(TO)2 (I > x IT(AV)), TJ maximum 0.99 1.04
Low level value of forward slope
resistance rf1 16.7 % x x IT(AV) < I < x IT(AV)),
TJ maximum 4.59 3.52
m
High level of forward slope
resistance rf2 (I > x IT(AV)), TJ maximum 4.17 3.13
Maximum forward
voltage drop VFM Ipk = 200 A, TJ = 25 °C, tp = 400 μs single
junction 1.63 1.49
V
RMS isolation voltage VISOL TJ = 25 °C, all terminal shorted
f = 50 Hz, t = 1 s 4000
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES
130MT.K
VALUES
160MT.K UNITS
Maximum junction operating
and storage temperature range TJ, TStg -40 to 150 °C
Maximum thermal resistance,
junction to case RthJC
DC operation per module 0.16 0.12
K/W
DC operation per junction 0.93 0.73
120° rect. conduction angle per module 0.18 0.15
120° rect. conduction angle per junction 1.08 0.88
Maximum thermal resistance,
case to heatsink RthCS Per module
Mounting surface smooth, flat and greased 0.03
Mounting
torque ± 10 %
to heatsink A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound. Lubricated threads.
4 to 6 Nm
to terminal 3 to 4
Approximate weight 176 g
VS-130-160MT..KPbF Series
www.vishay.com Vishay Semiconductors
Revision: 17-Aug-17 3Document Number: 94354
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics Fig. 2 - Forward Voltage Drop Characteristics
Fig. 3 - Total Power Loss Characteristics
Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current
130
120
150
140
110
100
90
80
70
60
50
Maximum Allowable
Case Temperature (°C)
Total Output Current (A)
20 40 60 80 120100 180160140
0
130MT..K Series
120° (Rect)
+
-
~
1
100
10
1000
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
1.0 2.0 3.0 4.0 5.0
0
TJ = 25 °C
130MT..K Series
Per junction
TJ = 150 °C
0
500
450
400
350
300
250
200
150
100
50
Maximum Total Power Loss (W)
Total Output Current (A)
20 40 60 80 100 160140120
0
120°
(Rect)
130MT..K Series
TJ = 150 °C
0
100
150
200
250
300
350
400
450
500
50
Maximum Total Power Loss (W)
Maximum Allowable Ambient Temperature (°C)
25 50 75 100 125 150
0
R
thSA
= 0.05 K/W - ΔR
0.12 K/W
0.2 K/W
0.3 K/W
0.5 K/W
0.7 K/W
1.5 K/W
700
800
900
600
500
400
300
200
1000
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude
Half Cycle Current Pulses (N)
10 100
1
Initial TJ = 150°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
At any rated load condition and with
rated VRRM applied following surge.
130MT..K Series
900
800
700
600
500
400
300
200
1200
1100
1000
Pulse Train Duration (s)
0.1 1.0
0.01
Peak Half Sine Wave
Forward Current (A)
Maximum non-repetitive surge current
130MT..K Series
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
versus pulse train duration.
VS-130-160MT..KPbF Series
www.vishay.com Vishay Semiconductors
Revision: 17-Aug-17 4Document Number: 94354
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 6 - Current Ratings Characteristic Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Total Power Loss Characteristics
Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current
150
140
130
110
100
120
50
60
70
80
90
Total Output Current (A)
80 120 20040 160 240
0
Maximum Allowable
Case Temperature (°C)
120°
(Rect)
160MT..K Series
+
-
~
1
100
10
1000
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
12345
0
TJ = 25 °C
160MT..K Series
Per junction
TJ = 150 °C
0
500
600
400
300
200
100
Maximum Total Power Loss (W)
Total Output Current (A)
40 80 120 160 200
0
120°
(Rect)
160MT..K Series
TJ = 150 °C
0
500
600
400
300
200
100
Maximum Total Power Loss (W)
Maximum Allowable Ambient Temperature (°C)
25 50 75 100 125 150
0
RthSA = 0.05 K/W - ΔR
0.1 K/W
0.15 K/W
0.2 K/W
0.3 K/W
0.5 K/W
0.7 K/W
1.5 K/W
900
800
700
600
500
400
300
1300
1200
1100
1000
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude
Half Cycle Current Pulses (N)
10 100
1
160MT..K Series
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
At any rated load condition and with
rated VRRM applied following surge.
900
800
700
600
500
400
300
1500
1400
1300
1200
1100
1000
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
0.1 1.0
0.01
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
versus pulse train duration.
Maximum non-repetitive surge current
160MT..K Series
VS-130-160MT..KPbF Series
www.vishay.com Vishay Semiconductors
Revision: 17-Aug-17 5Document Number: 94354
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Note
To order the optional hardware go to: www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95004
0.01
0.1
1
10
0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
Z
thJC
- Transient Thermal Impedance (K/W)
10
Per junction
130MT..K Series
160MT..K Series
Steady state value
RthJC = 0.93 K/W
RthJC = 0.73 K/W
(DC operation)
A
B
C
D
E
F
+
-
~
Document Number: 95004 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 27-Aug-07 1
MTK (with and without optional barrier)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS WITH OPTIONAL BARRIERS in millimeters (inches)
24 ± 0.5
(0.94 ± 0.02)
38 ± 0.5
(1.5 ± 0.02)
30 ± 0.5
(1.17 ± 0.02)
35 ± 0.3
(1.38 ± 0.01)
8.5 ± 0.5
(0.34 ± 0.02)
Fast-on tab 2.8 x 0.8 (type 110)
Screws M5 x 0.8 length 10
28 ± 1
(1.11 ± 0.04)
25.5 ± 0.5
(1.004 ± 0.02)
5 ± 0.3
(0.2 ± 0.01)
75 ± 0.5
(2.95 ± 0.02)
46 ± 0.3
(1.81 ± 0.01)
80 ± 0.3
(3.15 ± 0.01)
94 ± 0.3
(3.7 ± 0.01)
Ø 6.5 ± 0.2
(Ø 0.26 ± 0.01)
14 ± 0.3
(0.55 ± 0.01)
18 ± 0.3
(0.71 ± 0.01)
12
34
56
78
ABC
F
E
D
www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 95004
2Revision: 27-Aug-07
Outline Dimensions
Vishay Semiconductors MTK (with and without optional barrier)
DIMENSIONS WITHOUT OPTIONAL BARRIERS in millimeters (inches)
24 ± 0.5
(0.94 ± 0.02)
30 ± 0.5
(1.17 ± 0.02)
35 ± 0.3
(1.38 ± 0.01)
8.5 ± 0.5
(0.34 ± 0.02)
Fast-on tab 2.8 x 0.8 (type 110)
Screws M5 x 0.8 length 10
28 ± 1
(1.11 ± 0.04)
25.5 ± 0.5
(1.004 ± 0.02)
5 ± 0.3
(0.2 ± 0.01)
75 ± 0.5
(2.95 ± 0.02)
46 ± 0.3
(1.81 ± 0.01)
80 ± 0.3
(3.15 ± 0.01)
94 ± 0.3
(3.7 ± 0.01)
Ø 6.5 ± 0.2
(Ø 0.26 ± 0.01)
14 ± 0.3
(0.55 ± 0.01)
18 ± 0.3
(0.71 ± 0.01)
12
34
56
78
ABC
F
E
D
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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