Number: DB-061
April 2009 / D
Page 1
TAK CHEONG ®
PRELIMINARY DATASHEET
500mW QUADRO Mini-MELF
Hermetically Sealed Glass
Fast Switching Diodes
Absolute Ma ximum Ra ti ng s TA = 25°C unless otherwise noted
Symbol Parameter Value Units
PD Power Dissipation 500 mW
TSTG Storage Temperature Range -65 to +150 °C
TJ Operating Junction Temperature +150 °C
WIV Working Inverse Voltage 75 V
IO Average Rectified Current 150 mA
IFM Non-repetitive Peak Forward Current 450 mA
IFSURGE Peak Forward Surge Current 2 A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Fast Switching Device (TRR <4.0 nS)
QUADRO Mini-MELF Package
Surface Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All External Surfaces Are Corrosion Resistant And Terminals Are Readily Solderable
RoHS Compliant
Matte Tin (Sn) Lead Finish
Color band Indicates Negative Polarity
Electrical Characteristics TA = 25°C unless otherwise noted Limits
Symbol Parameter Test Condition
Min Max Unit
BV Breakdown Voltage IR=100µA
IR=5µA
100
75
Volts
IR Reverse Leakage Current VR=20V
VR=75V
25
5
nA
µA
VF Forward Voltage TCLS4448, TCLS914B
TCLS4448, TCLS4148
TCLS4448, TCLS914B
IF=5mA
IF=10mA
IF=100mA
0.62 0.72
1.0
1.0 Volts
TRR Reverse Recovery Time IF=IR=10mA
RL=100Ω
IRR=1mA
4 nS
C Capacitance VR=0V, f=1MHZ 4 pF
Cathode
Anode
ELECTRICAL SYMBOL
TCLS4148/TCLS4448/TCLS914B
Cathode Band Color : Black