MOSPOWER Selector Guide (Continued) N-Channel MOSPOWER (continued) . Breakdown Ip Power Device Voltage (Omen Continuous Dissipation Part (Volts) (Ohms (Amps) (Watts) Number 100 0.055 40.0 150 IRF150 100 0.08 33.0 150 IRF152 100 0.085 27.0 125 IRF140 100 0.11 24.0 125 IRF 142 100 0.18 14.0 100 VN1000A 100 0.18 14.0 75 IRF130 100 0.25 12.0 100 VN1001A 100 0.25 12.0 75 IRF 132 100 0.3 8.0 40 (RF 120 100 0.4 7.0 40 IRF122 90 4.0 1.9 25 2N6658 90 45 1.8 25 VNSSAA e; 90 5.0 1.7 25 VNSOAA 80 0.18 14.0 100 VNQ8B00A Ee 80 0.25 12.0 100 VNO0801A 60 0.055 40.0 150 IRF 151 TO-3 60 0.08 33.0 150 IRF153 60 0.085 27.0 125 IRF141 60 0.11 24.0 125 IRF143 60 0.12 18.0 100 VNOGO0A 60 0.15 16.0 100 VNOGOTA 60 0.18 14.0 75 IRF131 60 0.25 12.0 75 IRF133 60 0.3 8.0 40 IRF121 60 0.4 10.0 80 VN64GA 60 0.4 7.0 40 IRF123 60 3.0 2.0 25 2N6657 60 3.5 2.0 25 VNG6G7AA 40 0.12 18.0 100 VNO400A 40 0.15 16.0 100 VNO401A 35 1.8 2.0 25 2N6656 35 25 2.0 25 VN35AA 500 0.85 8.0 125 (RF840 500 1.10 7.9 125 IRF842 500 1.5 45 75 VN5001D 500 1.5 45 75 IRF830 500 2.0 4.0 75 VN5002D 500 2.0 4.0 75 IRF832 500 3.0 25 40 IRF820 500 4.0 2.0 40 IRF822 450 0.85 8.0 125 IRF841 450 1.10 7.0 125 IRF843 450 1.5 45 75 VN4501D 450 1.5 45 75 IRF831 450 2.0 4.0 75 VN4502D 450 2.0 4.0 75 IRF833 450 3.0 2.5 40 IRF821 450 4.0 2.0 40 IRF823 400 0.55 10.0 125 IRF740 TO-220AB 400 0.80 8.0 125 IRF742 400 1.0 6.0 75 VN4000D 400 1.0 55 75 t{RF730 400 1.5 5.0 75 VN4001D 400 1.5 45 75 IRF732 400 1.8 3.0 40 IRF720 400 2.5 2.5 40 IRF722 350 0.55 10.0 425 IRF741 350 0.80 8.0 125 IRF743 350 1.0 6.0 75 VN3500D 350 1.0 55 75 IRF731 350 1.5 5.0 75 VN3501D 350 1.5 45 75 IRF733 350 1.8 3.0 40 IRF721 350 25 25 40 IRF723 240 6.0 1.4 20 VN2406D Siliconix 1-5 SPINS 10P9/SG YIMOdSOW IRF150 #@ IRF154 # IRF152 IRF153 sx 4 OOV; -Channel Enhancement Mode ae Siliconix MOSPOWER vanced In These power FETs are designed especially for off-line switching regulators, converters, solenoid and relay drivers. FEATURES Product Summary a High Voltage Nooiver BVoss | Rosion) Ip Package a No Second Breakdown IRF150 400V m High Input Impedance IRF151. | 60V 0.05502 40a a Internal Drain-Source Diode IRF 182 100V : TOS B Very Rugged: Excellent SOA IRF153 60V 0.082 33A a Extremely Fast Switching BENEFITS f a Reduced Component Count ool m= Improved Performance Q a Simpler Designs a Improved Reliability ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage Drain Current WREAU5O o.oo ec e cece tence eee eee nee e et ene ences eennene 100V Pulsed (804s to 3004s, 1% duty cycle)................88. + 160A TRS. too Gate Currant Ph) ossorsstsetstsstscnnenetnein #98 IRF153 0... cect eect ee teen een ee eee b een een eee 60V Gate-Source Voltage ............. 0. cece cece ener een ees +40V Drain-Gate Voltage Total Power Dissipation ............. 6.0 cece cece ee ee eee eens 150 W IRF150 oi cece ccc ec eer er ee eee renee eneeeensenee tes 100V Linear Derating Factor ....0...00000000000 cae eeeevaee 1.2W/C IREA51 oo. ceeceececeeeeebeveceeeeceeeeeeeetseeeraeneeeseeetes 60V IRF152 0... ccc cece cee e cece eee e neta nena tb en en eneneetes 100V Operating and Storage URFASS occ ec eeceececeeeeecceeeccnereateeeeeeteetennnennens 60V Temperature ....2..eeeeeeeeeeeeeeee eee eeeeee 55C to + 150C Drain Current Continuous IRF150, 151.00... e eee ee eee e nent tenner ees 40A IRF152, 153.000... eee cece ence eee e eee e cece ene 33A PACKAGE DIMENSIONS 0.875 0.450 (11.43) Leet 222.225) oe} 6250 76.35) 0.135 max Max (3.429) i oe AT 0.043 (1.092) 17.925} S&S SEATING { } 0. 0.038 (0.965) MIN PLANE 4.197 190.404) i 1.177 (29.896) 0.675 (17.145) 0655 (76.637) S +t (4775) MAX q ar BOTH ENDS 040 (17.176) Li 0420 (70.668) eT 7 t PIN 1 Gate / 0.161 (4.089) PIN 2 Source a 0.225 (5.715) ont 181 (3.835) CASE Drain 0.205 (5.207) R MAX BoTTom view / 13: 305) TO-3 2-8 Siliconix ELECTRICAL CHARACTERISTICS (Tc =25C unless otherwise noted) - Part Parameter Number: - Min Typ Max _ Unit Test Conditions ce Statice IRF150 | 499 Drain-Source Breakdown IRF152 BVbss_ Voltage IRF151 v_ | Vas=0, Ip = 250nA IRF153 60 Vesitny Gate Threshold Voltage All 2 4.0 Vv. | Vos? Vas, p= 1 mA lass Gate-Body Leakage All +100 nA | Ves= + 20V, Vps =0 | Zero Gate Voltage Drain All 0.1 | 0.25 mA Vos = Rated Vig Vag = OV OSS Current a2 | 1.0 Vpg = Rated Vig Vag = OV, T,= 125C. Ipjon) + On-State Drain Current All 40 A Vos = 25V, Veg = 10V (Note 1) Static Drain-Source On-State IRFAS1 0.048 | 0.085 Toso) Resistance IRF1S3 | Vag =10V, Ip =20A (Note 1) IRF153 0.06 0.08 Dynamic . Ofs Forward Transconductance Alt 9 10 $s Vos = 25V, Ip = 20A (Note 1) Ciss Input Capacitance 2500 | 3000 . Coss Output Capacitance All 1000 | 1500 PF | Vgs=0, Vps= 25V, f= 1 MHz Crsg Reverse Transfer Capacitance 350 500 tgon) Turn-On Delay Time All 35 t Rise Time An 100 ns | Yoo =30V, Ip=20A, R, = 1.59, Ry = 102, tao Turn-Off Delay Time All 125 (Fig. 1) t Fall Time All 100 Drain-Source Diode Characteristics Vsp. Forward On Voltage. All 17 Vv ls =40A (Note 1) ty, Reverse Recovery Time All 500 ns Ip =-40A, Vas = 9, di/dt = 100A/us (Fig, 2) Note 1: Pulse test 80 us to 300 ps, 1% duty cycle FIGURE 1 Switching Test Circuit FIGURE 2 JEDEC Reverse Recovery Circult I 502 di/dt Adjust (1 - 27 uH) 4 + 5 TO 50uF 7 IN4933 BAS __ | (Pyc)Adiust , 7 Rgen OUT 4 | | ~ , = \ \ 5 j240.0 rm | + yN4001 | 4000uF 2 >i- | | - 4 { Ii cincut = 1 , R$ 0.250 PULSE UNDER [SeNERATOR] [TEST a a PW.=1 HS _ Cg < 50 pF + }- Le MAA DUTY CYCLE = 1% INa723 bowen | scope FROM TRIGGER CKT ; Siliconix 2-9 Sbial = 7Sbdal = bS baal = OSPddl