BD241A/B/C
BD242A/B/C
COMPLEMENTARY SILICON POWER TRANSISTORS
■SGS -THO MS ON PRE F ERRE D SALES T YP E S
■COMP LEM EN TARY PNP - NPN DEVICES
DESCRIPTION
The BD241A, BD241B and BD241C are silicon
epitaxial-base NPN transistors mounted in Jedec
TO-220 plastic pack age.
They are inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD242A,
BD242B and BD242C respectiv ely.
INTERNAL SCHEMATIC DIAG RAM
June 1997
A BSO LUT E MAX IMU M RATIN GS
Symbol Parameter Value Unit
NPN BD241A BD241B BD241C
PNP BD242A BD242B BD242C
VCER Collector-Base Voltage (RBE = 100 Ω) 70 90 115 V
VCEO Collector-Emitter Voltage (IB = 0) 60 80 100 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
ICCollector Current 3 A
ICM Collector Peak Current 5 A
IBBase Current 1 A
Ptot Total Dissipation at Tc ≤ 25 oC40W
P
tot Total Dissipation at Tamb ≤ 25 oC2W
T
stg Storage Tem perature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PNP types voltage and current values are negative.
123
TO-220
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max 3.13
62.5
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE = 0) VCE = rated VCEO 0.2 mA
ICEO Collector Cut-off
Current (IB = 0) for BD241A/BD242A VCE = 30 V
for BD241B/BD242B VCE = 60 V
for BD241C/BD242C VCE = 60 V
0.3
0.3
0.3
mA
mA
mA
IEBO Emitter Cut-off Current
(IC = 0) VEB = 5 V 1 mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage IC = 30 mA
for BD241A/BD242A
for BD241B/BD242B
for BD241C/BD242C
60
80
100
V
V
V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 3 A IB = 0.6 A 1.2 V
VBE∗Base-Emitter Voltage IC = 3 A VCE = 4 V 1.8 V
hFE∗DC Current Gain IC = 1 A VCE = 4 V
IC = 3 A VCE = 4 V 25
10
hfe Small Signal Current
Gain IC = 0.5 A VCE = 10 V f = 1MHz
IC = 0.5 A VCE = 10 V f = 1KHz 3
20
∗ P ulsed: P ulse duration = 300 µs, d uty cy cle ≤ 2 %
For PNP types volt ag e and current values are negative.
For the characte ris tics curves s ee TIP31/ TIP32 series.
BD241A/B/C/BD242A/B/C
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
BD241A/B/C/BD242A/B/C
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no re sponsability for the
conse quences of us e of such information n or for any infringement of patents or othe r rights of third part ies which may results from its use. No
license is granted by implicat ion or ot h erwise under any patent or patent rights of SGS-THOMSON Micro electronics . Specificati ons mentioned
in this publicat ion are subject to change without noti ce. This publicat ion sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Right s Reserved
SGS-THOMSO N Microelectronics GROUP OF COMPANIES
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. . .
BD241A/B/C/BD242A/B/C
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