CE LL4148 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 500mW power dissipation . The diode is also available in the DO-35 case with the type designation 1N4148 MECHANICAL DATA Dimensions in inches and (millimeters) . Case: MinMelf glass case(SOD- 80) . Weight: Approx. 0.05gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified) Symbol Reverse voltage Units Value VR 75 Volts Peak reverse voltage VRM 100 Volts Average rectified current, Half wave rectification with IAV 1501) mA Surge forward current at t<1S and TJ=25 IFSM 500 mA Power dissipation at TA=25 Ptot 5001) mW TJ 175 TSTG -65 to + 175 Resistive load at TA=25 and F 50Hz Junction temperature Storage temperature range 1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35) ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified) Symbols Typ. Max. Units VF 1 Volts at VR=20V IR 25 nA at VR=75V IR 5 nA IR 50 nA CJ 4 pF 2.5 Volts 4 ns 3501) K/W Forward voltage Leakage current Min. at VR=20V, TJ=150 Junction capacitance at VR=VF=0V Voltage rise when switching ON tested with 50mA pulse Tp=0.1 S, Rise time<30 Vfr S, fp=5 to 100KHz Reverse recovery time from IF=10mA to IR=1mA, trr VR=6V, RL=100 Thermal resistance junction to ambient Rectification efficience at f=100MHz,VRF=2V R JA 0.45 1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 1 of 3 CE LL4148 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE RATINGS AND CHATACTERISTIC CURVES LL4148 FIG.2-DYNAMIC FORWARD RESISTANCE FLG.1-FORWARD CHARACTERISTICS FIG.3-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE VERSUS FORWARD CURRENT FIG.4-RELATIVE CAPACITANCE VERSUS VOLTAGE Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 2 of 3 CE LL4148 CHENYI ELECTRONICS FIG.5-RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT SMALL SIGNAL SWITCHING DIODE FIG.6-LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 3 of 3