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GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1075 MP
75 Watt, 50 Volts, Class C
Avionics 1025 - 1150 MHz
GENERAL DESCRIPTION
The 1075 MP is a COMMON BASE bipolar transistor. It is designed for
pulsed systems in the frequency band 1025-1150 MHz. The device has gold
thin-film metallization for proven highest MTTF. The transistor includes
input prematch for broadband capability. Low thermal resistance package
reduces junction temperature, extends life.
CASE OUTLINE
55FU, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 250 Watts Pk
o2
Maximum Voltage and Current
BVces Collector to Emitter Voltage 65 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 6.5 Amps Pk
Maximum Temperatures
Storage Temperature - 65 to + 150 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
ηc
VSWR
Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F= 1025-1150 MHz
Vcc = 50 Volts
PW = 10 µsec
DF = 1%
F = 1090 MHz
75
7.5 9.0
40
13
20:1
Watts
Watts
dB
%
BVebo
BVces
Hfe
Cob
θjc2
Emitter to Base Breakdown
Collector to Emitter Breakdo wn
DC Current Gain to Emitter
Output Capacitance
Thermal Resistance
Ie = 5 mA
Ic = 15mA
Vce = 5V, Ic = 100 mA
Vcb = 50 V, f = 1 MHz
Pulsed
3.5
65
20
45 50
0.6
Volts
Volts
pF
C/W
o
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Initial Issue June, 1994
1075 MP
