SBL2030CT thru 2060CT
MAXIMUM RATINGS AND ELECTRICAL CHARACT ERIST ICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURES
Me tal of silicon rectifier,ma jority carrier conducton
Guard ring for tr an s ient protec tion
Low power loss, hi gh efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage, hi gh frequency inverters,free
wh elling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
NOTES : 1. 300us Pulse Width, 2% Duty Cyc le.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance Junction to Case.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
Maximum Av erage Forward
Rectified Current (See Fig.1)
@T
C
=
95
C
Peak Forward Surge Current
8.3ms single half sine-w ave
super im posed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward Voltage
at 10A DC (Note 1)
20
250
0.55
T
J
Operating Temperature Range
-55 to +125 C
T
STG
Storage Temperature Range
-55 to + 150 C
Typical Thermal Resistance (Note 3)
R
0JC
2.0
C/W
C
J
Typical Junction Capacitance
per element (Note 2)
600
pF
I
R
@T
J
=100 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C 1
50
mA
V
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
SBL
2045CT
45
31.5
45
SBL
2040CT
40
28
40
SBL
2035CT
35
24.5
35
SBL
2030CT
30
21
30
SBL
2050CT
50
35
50
SBL
2060CT
60
42
60
0.75
TO-220AB
All Dimensions in millimet er
TO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B14.22 15.88
10.67
9.6 5
2.5 4 3.43
6.86
5.8 4
8.2 6 9.28
- 6.35
12.70 14.73
0.5 1 2.79
N
M
L
K
J
I 1.14
2.2 9
0.64 0.3 0
3.53 4.09
3.56 4.83
1.14 1.40
2.92
2.0 3
PIN 1
PIN 3 PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
132
SCHOTT KY BA RRIER RECTIFIERS
REVERSE VOL TAGE
- 30
to
60
Volts
FORWARD CURRENT
- 20
Amperes
SEMICONDUCTOR
LITE-ON
REV. 3, 13-Sep-2001, KTHC06
RATING AND CHA RACTERISTIC CURVES
SBL2030CT thru SBL2060CT
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCL ES AT 60 Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 100220
0
50
100
150
200
250
300
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
25
75 100 125 150
5
050
20
175
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.3 - TYPICAL REVERSE CHARACTERIST ICS
INSTANTANEOUS
REVERSE CURRENT ,(mA)
20 40 120 140
0
0.01
1.0
10
1000
100
60 80 100
TJ= 125 C
0.1 TJ= 25 C
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
15
0
10
RESISTIVE OR INDUCTIVE LOAD
TJ= 75 C
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.2 0.3 0.7 0.8
1.0
10
100
0.4 0.5 0.6
0.1 1.0
0.9
PULSE WIDTH 300ua
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.1
1.0
10
100
0.1
PULSE WIDTH 300us
2% Duty cycle
TJ= 25 C
SBL2030CT ~ SBL2045CT
FIG.5 - TYPICAL JUNCTIO N CAPACITANCE
CA PACITANC E , (pF)
RE VE RS E VOLTAG E , VO LTS
10
1100
10000
1000
100 0.1
CASE TEMPERA TURE , C
4
SBL2050CT ~ SBL2060CT
TJ= 25 C, f= 1MHz
REV. 3, 1 3-Sep-2001, K THC 0 6