2SK2869 Silicon N Channel MOS FET High Speed Power Switching ADE-208-570 (Z) 1st. Edition Sep. 1997 Features * Low on-resistance R DS = 0.033 typ. * High speed switching * 4V gate drive device can be driven from 5V source Outline DPAK-2 4 4 D 1 2 3 G S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2869 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V Drain current ID 20 A 80 A 20 A 20 A 34 mJ 30 W Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR Avalanche current Avalanche energy I AP * 3 EAR* 3 2 1 Channel dissipation Pch* Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 2 2SK2869 Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 60 -- -- V I D = 10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 -- -- V I G = 100A, VDS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 16V, VDS = 0 Zero gate voltege drain current I DSS -- -- 10 A VDS = 60 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.5 -- 2.5 V I D = 1mA, VDS = 10V Static drain to source on state RDS(on) -- 0.033 0.045 I D = 10A, VGS = 10V*1 resistance RDS(on) -- 0.055 0.07 I D = 10A, VGS = 4V*1 Forward transfer admittance |yfs| 10 16 -- S I D = 10A, VDS = 10V*1 Input capacitance Ciss -- 740 -- pF VDS = 10V Output capacitance Coss -- 380 -- pF VGS = 0 Reverse transfer capacitance Crss -- 140 -- pF f = 1MHz Turn-on delay time t d(on) -- 10 -- ns I D = 10A, VGS = 10V Rise time tr -- 110 -- ns RL = 3 Turn-off delay time t d(off) -- 105 -- ns Fall time tf -- 120 -- ns Body to drain diode forward voltage VDF -- 1.0 -- V I F = 20A, VGS = 0 Body to drain diode reverse recovery time t rr -- 40 -- V I F = 20A, VGS = 0 diF/ dt = 50A/s Note: 1. Pulse test 3 2SK2869 Main Characteristics Power vs. Temperature Derating I D (A) 100 30 Drain Current Pch (W) Channel Dissipation Maximum Safe Operation Area 200 40 20 10 10 50 20 DC 10 100 150 Case Temperature tio 1s ho =2 t) 5 C) Ta = 25 C 1 Tc (C) 2 5 10 20 50 100 Drain to Source Voltage V DS (V) Typical Transfer Characteristics 6V 5V 40 ID 4.5 V (A) Pulse Test 30 4V 20 3.5 V VGS = 3 V 2 4 6 Drain to Source Voltage 8 10 V DS (V) Drain Current I D (A) Drain Current Tc 20 10 V 4 s( n( Operation in this area is 1 limited by R DS(on) Typical Output Characteristics 0 s 0m 2 200 50 10 Op 1m =1 era 0.2 50 PW 5 0.5 0 s 0 s 10 16 V DS = 10 V Pulse Test 12 8 4 0 25C Tc = 75C -25C 1 2 3 Gate to Source Voltage 4 5 V GS (V) 2SK2869 Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 0.8 0.6 I D = 15 A Drain to Source On State Resistance R DS(on) ( ) Drain to Source Saturation Voltage V DS(on) (V) 1.0 Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.2 0.1 VGS = 4 V 0.05 0.4 10 A 0.2 5A 10 V 0.02 0.01 12 4 8 Gate to Source Voltage 16 20 V GS (V) Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 10 A 0.08 0.06 V GS = 4 V 0.04 0.02 0 -40 2, 5 A 2, 5, 10 A 10 V 0 40 80 120 160 Case Temperature Tc (C) 0.1 0.2 0.5 1 2 5 10 20 Drain Current I D (A) 50 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance R DS(on) ( ) 0 50 Tc = -25 C 20 25 C 10 75 C 5 2 1 0.5 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 Drain Current I D (A) 100 5 2SK2869 Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 5000 di / dt = 50 A / s V GS = 0, Ta = 25 C 500 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 200 100 50 20 2000 1000 Ciss 500 Coss 200 100 Crss 50 VGS = 0 f = 1 MHz 20 10 0.1 10 0 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 12 V DS V GS 40 20 0 6 8 V DD = 50 V 25 V 10 V 8 16 24 32 Gate Charge Qg (nc) 4 0 40 V GS (V) V DD = 50 V 25 V 10 V 40 50 1000 Switching Time t (ns) 60 16 Gate to Source Voltage V DS (V) Drain to Source Voltage 80 30 Switching Characteristics 20 I D = 20 A 20 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 100 10 300 t d(off) 100 tf 30 tr t d(on) 10 3 1 0.1 V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % 0.3 1 3 Drain Current 10 30 I D (A) 100 2SK2869 Maximun Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current vs. Source to Drain Voltage Repetive Avalanche Energy E AR (mJ) Reverse Drain Current I DR (A) 20 16 12 10 V 5V 8 V GS = 0, -5 V 4 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 40 I AP = 20 A V DD = 25 V duty < 0.1 % Rg > 50 32 24 16 8 0 25 50 V SD (V) 100 125 150 Channel Temperature Tch (C) Avalanche Test Circuit V DS Monitor 75 Avalanche Waveform EAR = L 1 2 * L * I AP * 2 I AP Monitor VDSS VDSS - V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin 15 V 50 0 VDD 7 2SK2869 Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C D=1 1 0.5 0.3 0.2 0.1 0.05 0.1 ch - c(t) = s (t) * ch - c ch - c = 4.17 C/W, Tc = 25 C 0.02 1 0.0 0.03 t ho lse PDM Pu D= 1s PW T PW T 0.01 10 100 1m 10 m Pulse Width 100 m 1 10 PW (S) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% 90% td(on) 8 tr 10% 90% td(off) tf 2SK2869 Package Dimensions As of January, 2001 1.7 0.5 Unit: mm 2.3 0.2 0.55 0.1 4.7 0.5 1.2 0.3 16.2 0.5 1.15 0.1 0.8 0.1 (0.7) 3.1 0.5 5.5 0.5 6.5 0.5 5.4 0.5 0.55 0.1 0.55 0.1 2.29 0.5 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (L)-(2) -- -- 0.42 g 9 2SK2869 As of January, 2001 2.3 0.2 0.55 0.1 (4.9) (5.3) 6.5 0.5 5.4 0.5 1.2 Max 5.5 0.5 1.7 0.5 Unit: mm 0 - 0.25 2.5 0.5 1.15 0.1 0.8 0.1 2.29 0.5 0.55 0.1 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) 10 DPAK (S)-(1),(2) -- Conforms 0.28 g 2SK2869 As of January, 2001 (0.1) 2.3 0.2 0.55 0.1 (5.1) (5.1) (0.1) 6.5 0.5 5.4 0.5 1.2 Max 5.5 0.5 1.5 0.5 Unit: mm 0 - 0.25 2.5 0.5 1.15 0.1 0.8 0.1 2.29 0.5 0.55 0.1 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (S)-(3) -- Conforms 0.28 g 11 2SK2869 Cautions 1. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 12