2SK2869
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-570 (Z)
1st. Edition
Sep. 1997
Features
• Low on-resistance
RDS = 0.033 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
123
44
123
1. Gate
2. Drain
3. Source
4. Drain
DPAK–2
D
G
S
2SK2869
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID20 A
Drain peak current ID(pulse)*180 A
Body to drain diode reverse drain current IDR 20 A
Avalanche current IAP*320 A
Avalanche energy EAR*334 mJ
Channel dissipation Pch*230 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50Ω
2SK2869
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
voltage V(BR)DSS 60——V I
D
= 10mA, VGS = 0
Gate to source breakdown
voltage V(BR)GSS ±20——V I
G
= ±100µA, VDS = 0
Gate to source leak current IGSS ——±10 µAV
GS = ±16V, VDS = 0
Zero gate voltege drain
current IDSS ——10µAV
DS = 60 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.5 — 2.5 V ID = 1mA, VDS = 10V
Static drain to source on state RDS(on) — 0.033 0.045 ΩID = 10A, VGS = 10V*1
resistance RDS(on) — 0.055 0.07 ΩID = 10A, VGS = 4V*1
Forward transfer admittance |yfs|1016—SI
D
= 10A, VDS = 10V*1
Input capacitance Ciss — 740 — pF VDS = 10V
Output capacitance Coss — 380 — pF VGS = 0
Reverse transfer capacitance Crss — 140 — pF f = 1MHz
Turn-on delay time td(on) — 10 — ns ID = 10A, VGS = 10V
Rise time tr— 110 — ns RL = 3Ω
Turn-off delay time td(off) — 105 — ns
Fall time tf— 120 — ns
Body to drain diode forward
voltage VDF — 1.0 — V IF = 20A, VGS = 0
Body to drain diode reverse
recovery time trr —40—V I
F
= 20A, VGS = 0
diF/ dt = 50A/µs
Note: 1. Pulse test
2SK2869
4
Main Characteristics
40
30
20
10
050 100 150 200
200
100
50
10
20
5
1
2
0.5
0.212 51020 50100
20
16
12
8
4
012345
0246810
Ta = 25 °C
Tc = 75°C25°C
–25°C
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Operation in
this area is
limited by RDS(on)
V = 10 V
Pulse Test
DS
100 µs
1 ms
PW = 10 ms (1shot)
DC Operation (Tc = 25°C)
10 µs
50
40
30
20
10
3.5 V
4 V
5 V
V = 3 V
GS
6 V
4.5 V
10 V Pulse Test
2SK2869
5
0.1 1 100.2 5
0.5
0.02
0.05
0.01
0.10
0.08
0.06
0.04
0.02
–40 0 40 80 120 160
00.1 0.3 1 3 10 30 100
50
20
5
10
1
2
0.5
20.5
1.0
0.8
0.6
0.4
0.2
048
12 16 20
I = 15 A
D
5 A
10 A
5020
0.2
0.1
V = 4 V
GS
10 V
V = 4 V
GS
10 V
2, 5 A
10 A
2, 5, 10 A
25 °C
Tc = –25 °C
75 °C
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )Ω
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (°C)
R ( )
DS(on)
Static Drain to Source on State Resistance
Ω
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
Pulse Test
Pulse Test
V = 10 V
Pulse Test
DS
Pulse Test
2SK2869
6
0.1 0.3 1 3 10 30 100 01020304050
2000
5000
1000
100
200
500
100
80
60
40
20
0
20
16
12
8
4
8 16243240
0
1000
500
50
100
20
10
200
1000
300
30
100
3
10
1
0.1 0.3 1 3 10 30 100
di / dt = 50 A / µs
V = 0, Ta = 25 °C
GS
10
20
50
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
I = 20 A
D
VGS
VDS
V = 50 V
25 V
10 V
DD
V = 50 V
25 V
10 V
DD tf
r
td(on)
t
d(off)
t
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
V = 10 V, V = 30 V
PW = 5 µs, duty < 1 %
GS DD
2SK2869
7
20
16
12
8
4
00.4 0.8 1.2 1.6 2.0
V = 0, –5 V
GS
10 V 5 V
40
32
24
16
8
25 50 75 100 125 150
0
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
VDD
50Ω
Vin
15 V
0
ID
VDS
IAP
V(BR)DSS
L
VDD
E = • L • I •
2
1V
V – V
AR AP DSS
DSS DD
2
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
Channel Temperature Tch (°C)
Repetive Avalanche Energy E (mJ)
AR
Maximun Avalanche Energy vs.
Channel Temperature Derating
Avalanche WaveformAvalanche Test Circuit
I = 20 A
V = 25 V
duty < 0.1 %
Rg > 50
AP
DD
Ω
2SK2869
8
3
1
0.3
0.1
0.03
0.01
10 µ100 µ1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 4.17 °C/W, Tc = 25 °C
θ γ θ
θ
D = 1
0.5
0.2
0.01
0.02
0.1
0.05
1 shot Pulse
Tc = 25°C
Vin Monitor
D.U.T.
Vin
10 V
RL
V
= 30 V
DD
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50Ω
90%
10%
tf
Pulse Width PW (S)
Normalized Transient Thermal Impedance
s (t)
γ
Normalized Transient Thermal Impedance vs. Pulse Width
Switching Time Test Circuit Waveform
2SK2869
9
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
DPAK (L)-(2)
—
—
0.42 g
6.5 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
0.55 ± 0.1
5.5 ± 0.5 1.7 ± 0.5
16.2 ± 0.5
4.7 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
2.29 ± 0.5 2.29 ± 0.5
0.8 ± 0.1
0.55 ± 0.1
3.1 ± 0.5
(0.7)
As of January, 2001
Unit: mm
2SK2869
10
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
DPAK (S)-(1),(2)
—
Conforms
0.28 g
As of January, 2001
Unit: mm
6.5 ± 0.5
5.4 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
0.55 ± 0.1
1.7 ± 0.5
5.5 ± 0.5
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
1.2 Max
(4.9)
(5.3)
2SK2869
11
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
DPAK (S)-(3)
—
Conforms
0.28 g
As of January, 2001
Unit: mm
6.5 ± 0.5
5.4 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
0.55 ± 0.1
1.5 ± 0.5
5.5 ± 0.5
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
1.2 Max
(5.1)
(5.1)
(0.1)(0.1)
2SK2869
12
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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