CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET * HiRel Discrete and Microwave Semiconductor * For professional pre- and driver-amplifiers * For frequencies from 500 MHz to 20 GHz * Hermetically sealed microwave package * Low noise figure, high gain, moderate power * 4 3 1 2 Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 5613/008, Type Variant No.s 01 to 05 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CFY25-P (ql) Marking - Ordering Code Pin Configuration see below 1 2 3 4 G S D S Package Micro-X CFY25-23 (ql) CFY25-23P (ql) CFY25-20 (ql) CFY25-20P (ql) CFY25-nnl: specifies noise, gain and output power level (see electrical characteristics) (ql) Quality Level: P: Professional Quality, Ordering Code: Q62703F120 H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62703F119 (see order instructions for ordering example) Semiconductor Group 1 of 8 Draft D, Jul. 98 CFY25 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 5 V Drain-gate voltage VDG 7 V Gate-source voltage (reverse / forward) VGS - 5... + 0.5 V Drain current ID 80 mA Gate forward current IG 1.5 mA PRF,in + 17 dBm Junction temperature TJ 175 C Storage temperature range Tstg - 65... + 175 C Ptot 250 mW Tsol 230 C Rth JS 410 K/W RF Input Power, C- and X-Band 2) Total power dissipation Soldering temperature 3) 1) Thermal Resistance Junction-soldering point Notes.: 1) For VDS 3 V. For V DS > 3 V, derating is required. 2) At TS = + 72.5 C. For TS > + 72.5 C derating is required. 3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed. Semiconductor Group 2 of 8 Draft D, Jul. 98 CFY25 Electrical Characteristics (at TA=25C; unless otherwise specified) Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source saturation current VDS = 3 V, VGS = 0 V IDss 15 30 60 mA Gate threshold voltage VDS = 3 V, ID = 1 mA -VGth 0.3 1.0 3.0 V Drain current at pinch-off VDS = 3 V, VGS = - 4 V IDp - < 100 - A Gate leakage current at pinch-off VDS = 3 V, VGS = - 4 V -IGp - < 100 200 A Transconductance VDS = 3 V, ID = 15 mA gm15 35 40 - mS Gate leakage current at operation VDS = 3 V, ID = 15 mA -IG15 - <1 2 A Thermal resistance junction to soldering point Rth JS - 370 - K/W Semiconductor Group 3 of 8 Draft D, Jul. 98 CFY25 Electrical Characteristics (continued) Parameter Symbol Values min. typ. Unit max. AC Characteristics Noise figure 1) VDS = 3 V, ID = 15 mA, f = 12 GHz NF dB CFY25-P - < 2.3 - CFY25-20, -20P - 1.9 2.1 CFY25-23, -23P - 2.2 2.4 Associated gain. 1) VDS = 3 V, ID = 15 mA, f = 12 GHz Ga dB CFY25-P - > 8.5 - CFY25-20, -20P 8.5 9 - CFY25-23, -23P 8.0 8.7 - Output power at 1 dB gain compression VDS = 3 V, ID(RF off) = 20 mA, f = 12 GHz 2) P1dB dBm CFY25-20, -23 - 15 - CFY25-20P, 23P, -P 14 15 - Linear power gain 2) VDS = 3 V, ID = 20 mA, f = 12 GHz, Pin = 0 dBm dB Glp CFY25-20 - 9.2 - CFY25-23 - 8.5 - CFY25-20P, -P 8.5 9.2 - CFY25-23P 8.0 8.5 - Notes.: 1) Noise figure / sssociated gain characteristics given for minimum noise figure matching conditions (fixed generic matching, no fine-tuning). 2) Output power / linear power gain characteristics given for optimum output power matching conditions (fixed generic matching, no fine-tuning). Semiconductor Group 4 of 8 Draft D, Jul. 98 CFY25 Typical Common Source S-Parameters CFY25-20 f [GHz] 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0 |S11| [magn] 0,958 0,931 0,901 0,875 0,858 0,838 0,815 0,794 0,776 0,760 0,746 0,732 0,718 0,703 0,689 0,674 0,661 0,650 0,640 0,629 0,620 0,613 0,607 0,600 0,593 0,587 0,580 0,575 0,572 0,568 0,565 0,565 0,564 0,564 0,564 0,567 <S11 [angle] -22 -28 -36 -45 -56 -67 -78 -88 -98 -108 -117 -126 -135 -143 -150 -158 -166 -174 178 170 162 153 145 137 130 122 114 106 98 90 82 73 65 57 51 47 Semiconductor Group V DS = 3 V, I D = 15 mA, Z o = 50 |S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S 2 1 /S 1 2 MAG [magn] [angle] [magn] [angle] [magn] [angle] [magn] [dB] [dB] 3,301 160 0,0170 71 0,683 -14 0,44 22,9 3,208 155 0,0287 64 0,673 -18 0,50 20,5 3,107 148 0,0398 59 0,660 -23 0,54 18,9 3,016 139 0,0502 53 0,648 -29 0,56 17,8 2,950 130 0,0602 47 0,635 -35 0,55 16,9 2,877 120 0,0691 42 0,621 -41 0,56 16,2 2,795 111 0,0767 36 0,603 -48 0,58 15,6 2,708 102 0,0834 31 0,590 -54 0,61 15,1 2,621 93 0,0893 25 0,573 -60 0,64 14,7 2,537 84 0,0939 20 0,562 -67 0,66 14,3 2,451 76 0,0975 15 0,549 -73 0,69 14,0 2,365 68 0,1000 10 0,539 -80 0,72 13,7 2,281 60 0,1017 5 0,529 -86 0,77 13,5 2,202 52 0,1035 1 0,521 -91 0,81 13,3 2,133 45 0,1049 -3 0,511 -96 0,87 13,1 2,072 38 0,1056 -6 0,504 -101 0,92 12,9 2,020 30 0,1063 -10 0,495 -106 0,97 12,8 1,976 23 0,1068 -13 0,484 -111 1,02 12,7 11,7 1,933 16 0,1076 -16 0,474 -116 1,06 12,5 11,0 1,896 9 0,1080 -20 0,463 -121 1,11 12,4 10,4 1,859 2 0,1084 -23 0,452 -127 1,16 12,3 9,9 1,826 -5 0,1090 -26 0,443 -133 1,19 12,2 9,6 1,797 -13 0,1097 -29 0,436 -140 1,22 12,1 9,3 1,767 -20 0,1105 -33 0,431 -147 1,24 12,0 9,1 1,738 -27 0,1114 -36 0,426 -153 1,27 11,9 8,8 1,708 -34 0,1125 -40 0,421 -159 1,30 11,8 8,5 1,678 -41 0,1138 -43 0,419 -166 1,32 11,7 8,3 1,651 -49 0,1149 -47 0,417 -172 1,34 11,6 8,1 1,627 -56 0,1161 -51 0,413 -178 1,36 11,5 7,9 1,607 -63 0,1180 -55 0,410 176 1,37 11,3 7,7 1,589 -70 0,1198 -59 0,408 170 1,37 11,2 7,6 1,570 -78 0,1219 -64 0,404 164 1,37 11,1 7,5 1,552 -86 0,1242 -69 0,402 157 1,36 11,0 7,4 1,548 -92 0,1266 -74 0,398 152 1,35 10,9 7,4 1,554 -98 0,1292 -78 0,396 147 1,32 10,8 7,4 1,562 -102 0,1319 -81 0,394 143 1,28 10,7 7,6 5 of 8 Draft D, Jul. 98 CFY25 Typical Common Source S-Parameters CFY25-20 (continued) f [GHz] 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0 |S11| [mag] 0,953 0,921 0,892 0,861 0,836 0,814 0,790 0,768 0,749 0,731 0,714 0,699 0,683 0,669 0,657 0,645 0,632 0,620 0,609 0,600 0,592 0,586 0,579 0,574 0,571 0,566 0,563 0,561 0,559 0,556 0,556 0,556 0,557 0,559 0,561 0,565 <S11 [ang] -24 -30 -39 -49 -60 -72 -83 -94 -104 -114 -124 -133 -141 -149 -157 -165 -173 179 171 163 154 146 138 130 123 115 107 99 91 83 75 66 58 50 45 40 Semiconductor Group |S21| [mag] 3,987 3,858 3,714 3,583 3,484 3,374 3,254 3,129 3,007 2,890 2,776 2,662 2,556 2,458 2,374 2,299 2,233 2,174 2,120 2,071 2,026 1,984 1,947 1,910 1,876 1,842 1,806 1,774 1,745 1,719 1,698 1,676 1,653 1,646 1,649 1,656 V DS = 3 <S21 [ang] 159 153 146 138 128 118 108 99 90 82 73 65 57 50 42 35 28 21 14 7 0 -7 -14 -21 -29 -36 -43 -50 -57 -64 -72 -79 -87 -93 -99 -103 V, I D = 30 mA, Z o = 50 |S12| <S12 |S22| <S22 k-Fact. S 2 1 /S 1 2 MAG [mag] [ang] [mag] [ang] [mag] [dB] [dB] 0,0140 74 0,657 -15 0,49 24,5 0,0246 67 0,647 -18 0,53 22,0 0,0346 60 0,634 -23 0,56 20,3 0,0444 55 0,621 -28 0,59 19,1 0,0543 49 0,608 -35 0,58 18,1 0,0621 43 0,594 -41 0,60 17,4 0,0684 38 0,576 -47 0,63 16,8 0,0736 32 0,557 -53 0,67 16,3 0,0779 27 0,541 -59 0,70 15,9 0,0810 22 0,527 -65 0,74 15,5 0,0844 18 0,515 -72 0,78 15,2 0,0863 14 0,505 -78 0,83 14,9 0,0880 10 0,498 -84 0,88 14,6 0,0893 6 0,492 -89 0,93 14,4 0,0904 3 0,486 -94 0,98 14,2 0,0918 0 0,480 -99 1,02 14,0 13,1 0,0933 -2 0,474 -103 1,07 13,8 12,2 0,0945 -5 0,467 -108 1,11 13,6 11,6 0,0960 -8 0,459 -112 1,15 13,4 11,1 0,0976 -10 0,453 -118 1,18 13,3 10,7 0,0990 -13 0,446 -123 1,21 13,1 10,4 0,1006 -16 0,441 -129 1,23 12,9 10,1 0,1026 -19 0,436 -136 1,24 12,8 9,8 0,1047 -22 0,432 -142 1,25 12,6 9,6 0,1066 -25 0,428 -149 1,26 12,5 9,4 0,1088 -28 0,425 -155 1,27 12,3 9,2 0,1108 -32 0,424 -161 1,28 12,1 9,0 0,1140 -35 0,422 -167 1,27 11,9 8,8 0,1170 -39 0,421 -173 1,26 11,7 8,7 0,1199 -43 0,419 -179 1,26 11,6 8,5 0,1229 -48 0,417 175 1,24 11,4 8,4 0,1257 -53 0,414 168 1,23 11,2 8,3 0,1286 -58 0,412 162 1,23 11,1 8,2 0,1320 -63 0,410 157 1,20 11,0 8,3 0,1350 -67 0,409 152 1,16 10,9 8,4 0,1376 -71 0,407 148 1,13 10,8 8,6 6 of 8 Draft D, Jul. 98 CFY25 Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: Ordering Code: Q.......... CFY25- (nnl) (ql) (nnl): Noise/Gain/Power Level (ql): Quality Level Ordering Example: Ordering Code: Q62703F119 CFY25-20P For CFY25, Noise/Gain/Power Level 20P: NF < 2.1dB, G a > 8.5 dB, P 1dB > 14 dBm @ 12 GHz in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm - HiRel Discrete and Microwave Semiconductors www.siemens.de/semiconductor/products/35/353.htm Please contact also our marketing division : Tel.: Fax.: e-mail: Address: Semiconductor Group ++89 6362 4480 ++89 6362 5568 martin.wimmers@siemens-scg.com Siemens Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich 7 of 8 Draft D, Jul. 98 CFY25 Micro-X Package Published by Siemens Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. Siemens AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000). Semiconductor Group 8 of 8 Draft D, Jul. 98