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Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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©2001 Fairchild Semiconductor Corporation
October 2001
SGF80N60UF Rev. A
IGBT
SGF80N60UF
SGF80N60UF
Ultra-Fast IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF
series provides low conduction and switching losses.
UF series is designed for the applications such as motor
control and general inverters where High Speed Swit ching
is required.
Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 40A
• High Input Impedance
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteris ti cs
Symbol Description SGF80N60UF Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ± 20 V
ICCollector Current @ TC = 25°C80 A
Collector Current @ TC = 100°C40 A
ICM (1) Pulsed Collector Current 220 A
PDMaximum Power Dissipation @ TC = 25°C110 W
Maximum Power Dissipation @ TC = 100°C45 W
TJ Operating Junction Tempe rature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TLMaximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds 300 °C
Symbol Parameter Typ. Max. Units
RθJC Thermal Resistance, Junction-to- Case -- 1.1 °C/W
RθJA Thermal Resistance, Junction-to- Am bient -- 40 °C/W
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
GCETO-3PF
G
C
E
G
C
E
TO-3PF
©2001 Fairchild Semiconductor Corporation SGF80N60UF Rev. A
SGF80N60UF
Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
∆BVCES/
∆TJ
Temperature Coeff. of Breakdown
Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/°C
ICES Collector Cut-Of f Current VCE = VCES, VGE = 0V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA
On Characteri st ics
VGE(th) G-E Threshold Volt age IC = 40mA, VCE = VGE 3.5 4.5 6.5 V
VCE(sat) Collector to Emitter
Saturation V oltage IC = 40A, VGE = 15V -- 2.1 2.6 V
IC = 80A, VGE = 15V -- 2.6 -- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1MHz
-- 2790 -- pF
Coes Output Capacitance -- 350 -- pF
Cres Reverse Transfer Capacitance -- 100 -- pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 300 V, IC = 40A,
RG = 5Ω, VGE = 15V,
Inductive Load, TC = 25°C
-- 23 -- ns
trRise Time -- 50 -- ns
td(off) Turn-Off De l a y Time -- 90 130 n s
tfFall Time -- 50 150 ns
Eon Turn- On Switching Loss -- 570 -- uJ
Eoff Turn -Off Swit ch i n g Lo ss -- 590 -- uJ
Ets Total Switching Loss -- 1160 1500 uJ
td(on) Turn-On Delay Time
VCC = 300 V, IC = 40A,
RG = 5Ω, VGE = 15V,
Inductive Load, TC = 125°C
-- 30 -- ns
trRise Time -- 55 -- ns
td(off) Turn-Off De l a y Time -- 150 200 ns
tfFall Time -- 160 250 ns
Eon Turn-On Switching Loss -- 630 -- uJ
Eoff Turn-Off Switching Loss -- 940 -- uJ
Ets Total Switching Loss -- 1580 2000 uJ
QgTotal Gate Charge VCE = 300 V, IC = 40A,
VGE = 15V
-- 175 250 nC
Qge Gate-Emitter Charge -- 25 40 nC
Qgc Gate-Collector Charge -- 60 90 nC
LeInternal Emitter Inductance Measured 5mm from PKG -- 14 -- nH
©2001 Fairchild Semiconductor Corporation SGF80N60UF Rev. A
SGF80N60UF
Fig 1. Ty pi cal O ut put C har acteristics Fig 2. Typical Satu ration Voltage
Characteristics
Fig 3. Saturat i on Volta ge vs. Case
Temperature at Variant Curr ent Level Fig 4. Load Cu rr ent vs. Fr equency
Fig 5. Saturati on Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE
048121620
0
4
8
12
16
20 Com mon Emitter
TC = 125℃
80A
40A
IC = 20A
Collector - Emitter Voltage, V
CE [V]
Gate - Emitter Voltage, VGE [V]
048121620
0
4
8
12
16
20 Common Emitter
TC = 25℃
80A
40A
IC = 20A
Collector - Emitter Voltage, V
CE [V]
Gate - Emi tter Voltage, VGE [V]
0306090120150
0
1
2
3
4Comm on Emitt e r
VGE = 1 5 V
80A
40A
IC = 20 A
Co llector - Emi tter Vo ltage, V
CE [V]
Case Temperature, TC [℃]
0.5 1 10
0
20
40
60
80
100
120 Co m mo n Emit t er
VGE = 15V
TC = 25℃
TC = 125℃
Collector Current, I
C [A]
Collector - Emitter Voltage, VCE [V]
02468
0
50
100
150
200
250 20V
12V
15V
VGE = 10V
Common Emitter
TC = 25℃
Collector Current, I
C [A]
Collector - Emitter Voltage, VCE [V]
0.1 1 10 100 1000
0
10
20
30
40
50 VCC = 300V
Load Current : peak of square wave
Duty cycle : 50%
TC = 100℃
Power Dissipation = 26W
Frequenc y [ Khz]
Load Current [A]
©2001 Fairchild Semiconductor Corporation SGF80N60UF Rev. A
SGF80N60UF
Fig 7. Capacit ance Chara cteristics Fig 8. Turn- O n C har acteristics vs.
Gate Resistance
Fig 9. Turn-O ff C har acteristics vs .
Gate Resistance Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characte ri st i cs vs.
Collector Current Fig 12. Turn- Off Ch aracteristi cs vs.
Collector Current
11030
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Cres
Coes
Cies
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
Ca pacitance [pF]
Collector - Emitter Voltage, VCE [V ]
11080
20
100
1000
2000
Toff
Tf
Tf
Common Emitter
VCC = 300V, VGE = ±15V
IC = 40A
TC = 25℃
TC = 125℃
Switching Time [ns]
Gate Resistance, RG [Ω]
11070
20
100
500 Commo n Em it ter
VCC = 300V, VGE = ±15V
IC = 40A
TC = 2 5℃
TC = 125℃ Ton
Tr
Switching Time [ns]
Gate Resistance, RG [Ω]
11080
100
1000
5000
Eoff
Eon
Eoff
Comm on Emitter
VCC = 300V, VGE = ±15V
IC = 40A
TC = 25℃
TC = 125℃
Switching Loss [uJ]
Gate Resistance, RG [Ω]
10 20 30 40 50 60 70 80
10
100
500
Ton
Tr
Comm on E mitter
VCC = 300V, VGE = ±15V
RG = 5Ω
TC = 25℃
TC = 125℃
Switching Time [ns]
C o l le cto r Current, IC [A]
10 20 30 40 50 60 70 80
20
100
1000
2000
Toff
Tf
Toff
Tf
Comm on Emitter
VCC = 300V, VGE = ±15V
RG = 5Ω
TC = 25℃
TC = 125℃
Switching Time [ns]
Collector Current, IC [A]
©2001 Fairchild Semiconductor Corporation SGF80N60UF Rev. A
SGF80N60UF
1E-5 1E-4 1E-3 0.01 0.1 1 10
0.01
0.1
1
10
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
0.3 1 10 100 1000
0.1
1
10
100
500
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
50us
100us
1㎳
DC Operation
IC MAX. (Continuous)
IC MAX. (Pulsed)
Collector Curr ent, I
C [A]
Coll ector-Emitter Voltage, VCE [V]
Fig 14. Gate Charge Cha racter istics
Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics
Fig 13. Switching Loss vs. Collector Current
0 30 60 90 120 150 180
0
3
6
9
12
15
300 V
200 V
VCC = 10 0 V
Comm o n E mitter
RL = 7.5 Ω
TC = 25℃
Gate - Emitter Voltage, V
GE [ V ]
Gate Charge, Qg [ nC ]
Pdm
t1
t2
Du ty fact or D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
Fig 17. Transien t Therma l Impedance of IGBT
1 10 100 1000
1
10
100
500
Safe Operating Area
VGE=20V, TC=100oC
Collector Current, I
C [A]
Collector-Emitter Voltage, VCE [V]
0 1020304050607080
10
100
1000
3000
Eon
Eoff
Common Emitter
VCC = 300V, VGE = ±15V
RG = 5Ω
TC = 25℃
TC = 125℃
Switching Loss [uJ]
Collector Current, IC [A]
©2001 Fairchild Semiconductor Corporation SGF80N60UF Rev. A
SGF80N60UF
Package Dimension
15.50 ±0.20 ø3.60 ±0.20
26.50 ±0.20
4.50 ±0.20
10.00 ±0.20
16.50 ±0.20
10°
16.50 ±0.20
22.00 ±0.20
23.00 ±0.20
1.50 ±0.20
14.50 ±0.20
2.00 ±0.20
2.00 ±0.20 2.00 ±0.20
0.85 ±0.03
2.00 ±0.20
5.50 ±0.20
3.00 ±0.20
(1.50)
3.30 ±0.20
2.00 ±0.20
4.00 ±0.20
2.50 ±0.20
14.80 ±0.20
3.30 ±0.20
2.00 ±0.20
5.50 ±0.20
0.75 +0.20
–0.10
0.90 +0.20
–0.10
5.45TYP
[5.45 ±0.30]5.45TYP
[5.45 ±0.30]
TO-3PF
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGH TS, NOR THE RIGHTS OF OT HERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended f or surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical compon ent is any com ponent of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identific a tion Pr oduct Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
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No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reser ves the right to make changes at
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The datasheet is printed for reference information only.
Rev. H4
STAR*POWER is used under license
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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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