-
TOP
+ NC
-
BACK
NC +
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
WBFBP-03B Plastic-Encapsulate Transistors
BAT54M SCHOTTKY DIODE
DESCRIPTION
Epitaxial planar Silicon diode
FEATURES
Ultra-Small Surface Mount Package
Low Forward Voltage Drop
Fast Switching
PN Junction Guard Ring for Transient and ESD Protection
Available in Lead Free Version
APPLICATION
Ultra high speed switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: L1
-
L1
+ NC
Maximum Ratings @TA=25℃
Parameter Symbol Limits Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30 V
Forward Continuous Current (Note 1) IFM 200
mA
Repetitive Peak Forward Current IFRM 300
mA
Forward Surge Current @ t < 1.0s IFSM 600
mA
Power Dissipation (Note 1) Pd 150
mW
Thermal Resistance, Junction to Ambient (Note 1) RθJA 833 ℃/W
Junction temperature TJ 125
℃
Storage temperature range TSTG -65-125 ℃
Notes:1. Device mounted on FR-4 PC board with recommended pad layout
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
1. ANODE
2. NC
3.CATHODE
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V(BR) IR= 100μA 30 V
Reverse voltage leakage current IR V
R=25V 2
μA
Forward voltage VF
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
240
320
400
500
1000
mV
Total capacitance CT V
R=1V,f=1MHz 10
pF
Reverse recovery time t r r IF=10mA, IR=10mA~1mA
RL=100Ω
5
nS
Typical Characteristics BAT54M
Min. Max. Min. Max.
A 0.450 0.550 0.018 0.022
A1 0.010 0.090 0.000 0.004
b 0.170 0.270 0.007 0.011
b1 0.270 0.370 0.011 0.015
b2
D 1.150 1.250 0.045 0.049
E 1.150 1.250 0.045 0.049
D2
E2
e
L
L1
L2
k
z 0.090 REF. 0.004 REF.
0.230 REF.
0.150 REF. 0.009 REF.
0.010 REF.
0.300 REF. 0.012 REF.
0.280 REF. 0.011 REF.
0.006 REF.
Symbol D imensions In Millimeters D imensions In Inches
0.800 TYP. 0.032 TYP.
0.470 REF.
0.810 REF. 0.002 REF.
0.032 REF.
0.250 RE F.
