HEXFET® Power MOSFET
S
D
G
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 3.3
RθJA Case-to-Ambient (PCB mount)** ––– 50 °C/W
RθJA Junction-to-Ambient ––– 110
Thermal Resistance
VDSS = 55V
RDS(on) = 0.065Ω
ID = 17A
Description
2/10/00
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lLogic-Level Gate Drive
lSurface Mount (IRLR024N)
lStraight Lead (IRLU024N)
lAdvanced Process Technology
lFast Switching
lFully Avalanche Rated
Fifth Generation HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the lowest possible on-
resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient device for use in
a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A
IDM Pulsed Drain Current 72
PD @TC = 25°C Power Dissipation 4 5 W
Linear Derating Factor 0.3 W/°C
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy68 mJ
IAR Avalanche Current11 A
EAR Repetitive Avalanche Energy4.5 mJ
dv/d t Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Absolute Maximum Ratings
PD- 91363E
D-Pak I-Pak
IRLR024N IRLU024N
IRLR024N
IRLU024N
IRLR/U024N
2www.irf.com
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 11A, VGS = 0V
trr Reverse Recovery Time –– – 60 9 0 ns TJ = 25°C, IF = 11A
Qrr Reverse RecoveryCharge ––– 130 200 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
17
72 A
VDD = 25V, starting TJ = 25°C, L = 790µH
RG = 25Ω, IAS = 11A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11) Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRLZ24N data and test conditions.
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
ISD ≤ 11A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.061 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.065 VGS = 10V, ID = 10A
––– ––– 0.080 ΩVGS = 5.0V, ID = 10A
––– ––– 0.110 VGS = 4.0V, ID = 9.0A
VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 8.3 ––– ––– S VDS = 25V, ID = 11A
––– ––– 25 µA VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
QgTotal Gate Charge ––– ––– 15 ID = 11A
Qgs Gate-to-Source Charge ––– ––– 3.7 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 8.5 VGS = 5.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 7.1 ––– VDD = 28V
trRise Time ––– 74 ––– ns ID = 11A
td(off) Turn-Off Delay Time ––– 20 ––– RG = 12Ω, VGS = 5.0V
tfFall Time ––– 29 ––– RD = 2.4Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 480 ––– VGS = 0V
Coss Output Capacitance ––– 130 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 6 1 –– – ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
IGSS
S
D
G
LSInternal Source Inductance ––– 7.5 –––
RDS(on) Static Drain-to-Source On-Resistance
LDInternal Drain Inductance – –– 4.5 –––
IDSS Drain-to-Source Leakage Current
IRLR/U024N
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
0.1 1 10 100
I , D ra in -to-Sou rce C u rre nt (A )
D
V , D rain-to-S ource Volta
g
e
(
V
)
DS
A
20
µ
s PULSE WIDTH
T = 2 5°C
J
VGS
TOP 15V
12V
10V
8.0 V
6.0 V
4.0 V
3.0 V
BOTTOM 2.5V
2.5V
0.1
1
10
100
0.1 1 10 100
I , Dra in -to- S ou r ce C u rre n t (A )
D
V , Dr a in- to -S o u r ce Vo lta
g
e
(
V
)
DS
A
20
µ
s PU LSE WIDTH
T = 175°C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
J
0.1
1
10
100
2345678910
T = 25°C
J
GS
V , G ate -to -So u rce V olta
g
e
(
V
)
D
I , D rain-to- So urce Cu rren t (A )
T = 175°C
J
A
V = 15 V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , J u nc tio n T emp e ratur e (°C )
R , Dra in -to-Sou rc e On Res is tan c e
DS(on)
(Normalized)
V = 1 0 V
GS
A
I = 1 8A
D
17 A
IRLR/U024N
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
200
400
600
800
1 10 100
C , Capacitance (pF)
DS
V , Dr ain -to -So u rc e Vo lta
g
e
(
V
)
A
V = 0V, f = 1 M Hz
C = C + C , C SHORT E D
C = C
C = C + C
GS
iss
g
s
g
d ds
rss
g
d
oss ds
g
d
C
iss
C
oss
C
rss
0
3
6
9
12
15
0 4 8 12 16 20
Q , T o ta l G a te Ch ar
g
e
(
nC
)
G
V , Ga te -to- S ou r ce V o ltag e (V)
GS
A
FOR TEST C IRCUIT
SE E FIG URE 13
V = 4 4V
V = 2 8V
I = 1 1 A
DS
DS
D
1
10
100
0.4 0.8 1.2 1.6 2.0
T = 25°C
J
V = 0V
GS
V , So u rc e-to-D r ain V o lta
g
e
(
V
)
I , R e vers e D rain Curre nt (A )
SD
SD
A
T = 175°C
J
1
10
100
1000
1 10 100
V , D ra in-to -S o ur ce V o lta
g
e
(
V
)
DS
I , Drain C urrent (A )
O P E R A TIO N IN TH IS AR E A L IMITE D
B Y R
D
DS(on)
10µs
100µs
1ms
10ms
A
T = 25°C
T = 175°C
Sin
g
le P u lse
C
J
IRLR/U024N
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Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
5V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t , Rectangular Pulse D uration (sec)
1
thJC
D = 0.50
0.01
0.02
0.05
0.10
0.20
S IN GL E PUL SE
(THERM AL RESPONSE)
A
Therm al R esponse (Z )
P
t
2
1
t
DM
N otes:
1. D uty fac tor D = t / t
2. P ea k T = P x Z + T
12
JDM thJC
C
25 50 75 100 125 150 175
0
5
10
15
20
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
IRLR/U024N
6www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
0
20
40
60
80
100
120
140
25 50 75 100 125 150 175
J
E , S in gle P ulse Avalanc he En ergy (m J)
AS
A
Startin
g
T , Junction Tem perature
(
°C
)
V = 25 V
I
T O P 4 .5 A
7 .8 A
B OTTO M 11A
DD
D
IRLR/U024N
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFET® MOSFETs
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRLR/U024N
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D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
6.73 (.265 )
6.35 (.250 )
- A -
4
1 2 3
6.2 2 (.245)
5.9 7 (.235)
- B -
3X 0.89 (.035)
0.64 (.025)
0.25 (.010) M A M B
4 .57 (.18 0)
2.28 (.090)
2X 1.1 4 (.045)
0.7 6 (.030)
1.52 (.060)
1.15 (.045)
1.02 (.04 0)
1.64 (.02 5)
5 .46 (.215)
5 .21 (.205) 1.27 (.050 )
0.88 (.035 )
2.38 (.094)
2.19 (.086) 1.14 (.045)
0.89 (.035)
0.58 (.02 3)
0.46 (.01 8)
6.4 5 (.245)
5.6 8 (.224)
0 .51 (.020)
MIN.
0.58 (.023)
0.46 (.018)
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOUR CE
4 - DRAIN
10.42 (.4 10)
9.40 (.370)
NOTES:
1 DIMEN SIO NIN G & TOLER AN C ING PE R A NSI Y14.5 M , 1982.
2 C ONTROLLING DIM ENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 D IMENSION S SHOWN ARE BEFORE SOLDER DIP ,
SO LDE R DIP MAX. +0.16 (.0 06).
IRLR/U024N
www.irf.com 9
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
6.73 (.265 )
6.35 (.250 )
- A -
6.22 (.245 )
5.97 (.235 )
- B -
3X 0.89 (.035)
0.64 (.025)
0.25 (.010) M A M B
2.28 (.09 0)
1.14 (.0 45)
0.76 (.0 30)
5.46 (.21 5)
5.21 (.20 5) 1 .27 (.050)
0 .88 (.035)
2.38 (.094)
2.19 (.086)
1.14 (.045)
0.89 (.035)
0 .58 (.02 3)
0 .46 (.01 8) LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO J EDEC OUT LINE TO- 25 2AA.
4 DIMENS IO N S SHO WN AR E B EFO R E S OLD ER DIP,
S O LD E R DIP M A X. +0.16 (.006).
9 .65 (.38 0)
8 .89 (.35 0)
2X
3X
2.2 8 (.0 90)
1.9 1 (.0 75)
1.5 2 (.060)
1.1 5 (.045)
4
1 2 3
6.45 (.245)
5.68 (.224)
0.58 (.023)
0.46 (.018)
IRLR/U024N
10 www.irf.com
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
Data and specifications subject to change without notice. 2/10
D-Pak (TO-252AA) Tape & Reel Infor mation
Dimensions are shown in millimeters (inches)
TR
16 .3 ( .6 4 1 )
15 .7 ( .6 1 9 )
8.1 ( .318 )
7.9 ( .312 )
1 2.1 ( .4 7 6 )
1 1.9 ( .4 6 9 ) FEED DIRECTION FEED DIRECTION
16 .3 ( .641 )
15 .7 ( .619 )
TRR TRL
NO TES :
1. CONT ROLLING DIMEN SION : MILLIMETER.
2. ALL DIM EN SIONS ARE SHO WN IN M ILLIM ETERS ( INCHES ).
3. OU TL IN E C O N F O R MS TO EIA-4 81 & EIA-541.
NOTES :
1 . OUTL INE CONF ORMS TO EIA - 4 8 1.
16 mm
1 3 IN CH
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
