GP2S40J0000F GP2S40J0000F Detecting Distance : 3mm Phototransistor Output, Compact Reflective Photointerrupter Description Agency approvals/Compliance GP2S40J0000F is a compact-package, phototransistor output, reflective photointerrupter, with emitter and detector facing the same direction in a molding that provides non-contact sensing. The compact package series is a result of unique technology, combing transfer and injection molding, that also blocks visible light to minimize false detection. This device has a long focal distance for this family of devices. 1. Compliant with RoHS directive Applications 1. Detection of object presence or motion. 2. Example : printer, optical storage Features 1. Reflective with Phototransistor Output 2. Highlights : * Compact Size 3. Key Parameters : * Optimal Sensing Distance : 3mm * Package : 4x3x2.4mm * Visible light cut resin to prevent 4. Lead free and RoHS directive compliant Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D3-A02001EN Date Oct. 3. 2005 (c) SHARP Corporation GP2S40J0000F Internal Connection Diagram Top view 4 1 Anode 3 2 Emitter 3 Collector 4 Cathode 2 0.65 (4) 3 3 Top view 4 (Unit : mm) (0.4) Detector center (0.4) Emitter center Outline Dimensions 4-0.2+0.3 -0.1 1 C0.5 1 2 1.75 4-0.5+0.3 -0.1 12.51 2.4 4 Date code mark * Tolerance : 0.2mm. * ( ) : Reference dimensions. * Burr's dimension : 0.15mm MAX. * The dimensions shown do not include those of burrs. Product mass : approx. 0.085g Plating material : SnCu (Cu : TYP. 2%) Sheet No.: D3-A02001EN 2 GP2S40J0000F Date code (Symbol) January July February August March September April October May November June December Country of origin Japan Sheet No.: D3-A02001EN 3 Absolute Maximum Ratings Parameter Forward current Input Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Output Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature 1 Soldering temperature Symbol Rating IF 50 VR 6 PD 75 VCEO 35 VECO 6 20 IC 75 PC 100 Ptot Topr -25 to +85 Tstg -40 to +100 Tsol 260 (Ta=25C) Unit mA V mW V V mA mW mW C C C 1mm or more GP2S40J0000F Soldering area 1 For 5s Electro-optical Characteristics Parameter Forward voltage Input Reverse current Output Collector dark current 2 Collector Current Transfer 3 Leak current characRise time Response time teristics Fall time Symbol VF IR ICEO IC ILEAK tr tf Condition IF=20mA VR=3V VCE=20V IF=20mA, VCE=5V IF=20mA, VCE=5V VCE=2V, IC=100A, RL=1k, d=4mm MIN. - - - 0.5 - - - TYP. 1.2 - 1 - - 50 50 (Ta=25C) MAX. Unit 1.4 V 10 A 100 nA 3 mA 500 nA 150 s 150 2 The condition and arrangement of the reflective object are shown below. 3 No reflective object Test Arrangement for Collector Current Al evaporation d=4mm glass plate Sheet No.: D3-A02001EN 4 GP2S40J0000F Fig.2 Collector Power Dissipation vs. Ambient Temperature 60 120 50 100 Power dissipation P (mW) Forward current IF (mA) Fig.1 Forward Current vs. Ambient Temperature 40 30 20 Ptot P, Pc 80 75 60 40 20 15 10 0 -25 0 25 75 85 50 0 -25 100 0 Ambient temperature Ta (C) Collector current IC (mA) Forward current IF (mA) 75 85 100 VCE =5V Ta =25C 3 25C 0C -25C 50C 100 50 Fig.4 Collector Current vs. Forward Current Fig.3 Forward Current vs. Forward Voltage Ta =75C 25 Ambient temperature Ta (C) 10 2.4 1.8 1.2 0.6 1 0 0 0.5 1 1.5 2 Forward voltage VF (V) 2.5 3 Fig.5 Collector Current vs. Collector-Emitter Voltage 0 5 10 15 20 Forward current IF (mA) 25 30 Fig.6 Relative Collector Current vs. Ambient Temperature 150 Ta =25C IF =20mA VCE=5V 3 Relative collector current (%) Collector current IC (mA) 125 IF =50mA 2.4 40mA 1.8 30mA 20mA 1.2 10mA 0.6 0 2.4 4.8 7.2 9.6 Collector-emitter voltage VCE (V) 75 50 25 5mA 0 100 0 -25 12 0 25 50 75 Ambient temperature Ta (C) Sheet No.: D3-A02001EN 5 GP2S40J0000F Fig.7 Collector Dark Current vs. Ambient Temperature Fig.8 Response Time vs. Load Resistance 10-6 1 000 Response time tr, tf, td, ts (s) Collector dark current ICEO (A) VCE= 20V 10-7 10-8 10-9 tr tf 100 td 10 VCE = 5V IC =100mA Ta = 25C ts 10-10 0 25 50 75 Ambient temperature Ta (C) 1 0.1 100 Fig.9 Test Circuit for Response Time 1 10 Load resistance RL (K) 100 Fig.10 Detecting Position Characteristics (1) White Input 100 RL Relative collector current (%) VCC Input Measuring Output terminal 10% 90% ts td tr tf Black Test Card OMS 4mm Reflector Plate 90 + 1mm 80 70 L= 0 60 50 40 IF =20mA VCE =5V Ta =25C 30 20 10 0 Fig.11 Detecting Position Characteristics (2) 90 + 80 1mm 70 L=0 60 IF =20mA VCE =5V Ta =25C 50 40 2 3 4 5 6 Sensor moving distance L (mm) 100 Black Relative collector current (%) Relative collector current (%) 100 1 7 Fig.12 Relative Collector Current vs. Distance (Reference value) 4mm White 0 30 20 IF =20mA VCE =5V Ta =25C Al evaporation glass d 80 60 40 20 10 0 0 1 2 3 4 5 6 Sensor moving distance L (mm) 7 0 2 4 6 8 10 Distance d (mm) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D3-A02001EN 6 GP2S40J0000F Design Considerations Design guide 1) Prevention of detection error To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light. 2) Distance characteristic Please refer to Fig.12 (Relative collector current vs. Distance) to set the distance of the photointerrupter and the object. This product is not designed against irradiation and incorporates non-coherent IRED. Degradation In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration. Parts This product is assembled using the below parts. * Photodetector (qty. : 1) Category Material Maximum Sensitivity wavelength (nm) Sensitivity wavelength (nm) Response time (s) Phototransister Silicon (Si) 930 700 to 1 200 20 * Photo emitter (qty. : 1) Category Material Maximum light emitting wavelength (nm) I/O Frequency (MHz) Infrared emitting diode (non-coherent) Gallium arsenide (GaAs) 950 0.3 * Material Case Lead frame Lead frame plating Black polyphenylene sulfide resin 42Alloy SnCu plating Sheet No.: D3-A02001EN 7 GP2S40J0000F Manufacturing Guidelines Soldering Method Flow Soldering: Soldering should be completed below 260C and within 5 s. Soldering area is 1mm or more away from the bottom of housing. Please take care not to let any external force exert on lead pins. Please don't do soldering with preheating, and please don't do soldering by reflow. Other notice Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the cooling and soldering conditions. Cleaning instructions Solvent cleaning : Solvent temperature should be 45C or below. Immersion time should be 3 minutes or less. Ultrasonic cleaning : Do not execute ultrasonic cleaning. Recommended solvent materials : Ethyl alcohol, Methyl alcohol and Isopropyl alcohol. Presence of ODC This product shall not contain the following materials. And they are not used in the production process for this product. Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform) Specific brominated flame retardants such as the PBBOs and PBBs are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC). *Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE). Sheet No.: D3-A02001EN 8 GP2S40J0000F Package specification Sleeve package Package materials Sleeve : Polystyrene Stopper : Styrene-Butadiene Package method MAX. 50 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless stoppers. MAX. 20 sleeves in one case. Sheet No.: D3-A02001EN 9 GP2S40J0000F Important Notices * The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. with equipment that requires higher reliability such as: --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- Traffic signals --- Gas leakage sensor breakers --- Alarm equipment --- Various safety devices, etc. (iii) SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- Space applications --- Telecommunication equipment [trunk lines] --- Nuclear power control equipment --- Medical and other life support equipment (e.g., scuba). * Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. * If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such SHARP devices. * Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: --- Personal computers --- Office automation equipment --- Telecommunication equipment [terminal] --- Test and measurement equipment --- Industrial control --- Audio visual equipment --- Consumer electronics (ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection * This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party. * Contact and consult with a SHARP representative if there are any questions about the contents of this publication. [H145] Sheet No.: D3-A02001EN 10