GP2S40J0000F
1
Sheet No.: D3-A02001EN
Date Oct. 3. 2005
© SHARP Corporation
Notice The content of data sheet is subject to change without prior notice.
In the absence of confi rmation by device specifi cation sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specifi cation sheets before using any SHARP device.
GP2S40J0000F Detecting Distance : 3mm
Phototransistor Output,
Compact Refl ective
Photointerrupter
■Description
GP2S40J0000F is a compact-package, phototransistor
output, reflective photointerrupter, with emitter and
detector facing the same direction in a molding that
provides non-contact sensing. The compact package
series is a result of unique technology, combing transfer
and injection molding, that also blocks visible light to
minimize false detection.
This device has a long focal distance for this family of
devices.
■Features
1. Refl ective with Phototransistor Output
2. Highlights :
• Compact Size
3. Key Parameters :
• Optimal Sensing Distance : 3mm
• Package : 4×3×2.4mm
• Visible light cut resin to prevent
4. Lead free and RoHS directive compliant
■Agency approvals/Compliance
1. Compliant with RoHS directive
■Applications
1. Detection of object presence or motion.
2. Example : printer, optical storage
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Sheet No.: D3-A02001EN
GP2S40J0000F
■Internal Connection Diagram
1
2
3
4
Anode
Emitter
Collector
Cathode
Top view
34
21
1.75
C0.5
4
Date code mark
3
(4)
0.65
2.4
12.5±1
4−0.5+0.3
−0.1
4−0.2+0.3
−0.1
4 3
1 2
Top view
(0.4) Emitter center
(0.4) Detector center
■Outline Dimensions (Unit : mm)
Product mass : approx. 0.085g
• Tolerance : ±0.2mm.
• ( ) : Reference dimensions.
• Burr's dimension : 0.15mm MAX.
• The dimensions shown do not
include those of burrs.
Plating material : SnCu (Cu : TYP. 2%)
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Sheet No.: D3-A02001EN
GP2S40J0000F
Date code (Symbol)
January July
February August
March September
April October
May November
June December
Country of origin
Japan
4
Sheet No.: D3-A02001EN
GP2S40J0000F
■Absolute Maximum Ratings
■Electro-optical Characteristics
(Ta=25˚C)
Parameter Symbol Rating Unit
Input
Forward current IF50 mA
Reverse voltage VR6V
Power dissipation PD75 mW
Output
Collector-emitter voltage
VCEO 35 V
Emitter-collector voltage
VECO 6V
Collector current IC20 mA
Collector power dissipation PC75 mW
Total power dissipation Ptot 100 mW
Operating temperature Topr −25 to +85 ˚C
Storage temperature Tstg −40 to +100 ˚C
∗1Soldering temperature Tsol 260 ˚C
∗1 For 5s
(Ta=25˚C)
Parameter Symbol Condition MIN. TYP. MAX. Unit
Input Forward voltage VFIF=20mA −1.2 1.4 V
Reverse current IRVR=3V −−
10 μA
Output Collector dark current ICEO VCE=20V −1 100 nA
Transfer
charac-
teristics
∗2 Collector Current ICIF=20mA, VCE=5V 0.5 −3mA
∗3 Leak current ILEAK IF=20mA, VCE=5V −−
500 nA
Response time Rise time trVCE=2V, IC=100μA,
RL=1kΩ, d=4mm
−50 150 μs
Fall time tf−50 150
∗2 The condition and arrangement of the refl ective object are shown below.
∗3 No refl ective object
Soldering area
1mm or more
●Test Arrangement for Collector Current
Al evaporation
d=4mm glass plate
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Sheet No.: D3-A02001EN
GP2S40J0000F
Fig.5 Collector Current vs.
Collector-Emitter Voltage
Fig.6 Relative Collector Current vs.
Ambient Temperature
Fig.3 Forward Current vs. Forward
Voltage
Fig.4 Collector Current vs.
Forward Current
Forward current IF (mA)
Forward voltage VF (V)
0 0.5 1 1.5 2
1
2.5 3
25˚C
0˚C
−25˚C
50˚C
Ta=75˚C
10
100
Collector current IC (mA)
Forward current IF (mA)
0.6
1.8
1.2
2.4
3
005 1015202530
VCE=5V
Ta=25˚C
Collector current IC (mA)
Collector-emitter voltage VCE (V)
3
2.4
1.8
1.2
0.6
00 2.4 4.8 7.2 9.6 12
5mA
10mA
20mA
30mA
40mA
Ta=25˚C
IF=50mA
Relative collector current (%)
Ambient temperature Ta (˚C)
0255075
0
IF=20mA
VCE=5V
−25
50
25
75
100
125
150
Fig.1 Forward Current vs. Ambient
Temperature
Fig.2 Collector Power Dissipation vs.
Ambient Temperature
Power dissipation P (mW)
Ambient temperature Ta (˚C)
−25 0 25 50 75 100
0
20
15
40
60
85
100
120
80
75
Ptot
P, Pc
Forward current IF (mA)
Ambient temperature Ta (˚C)
−25 0 25 50 75 100
0
10
20
30
40
50
60
85
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Sheet No.: D3-A02001EN
GP2S40J0000F
Fig.7 Collector Dark Current vs.
Ambient Temperature
Fig.8 Response Time vs. Load
Resistance
Fig.9
Test Circuit for Response Time
Fig.10
Detecting Position Characteristics (1)
Fig.11
Detecting Position Characteristics (2)
Collector dark current ICEO (A)
Ambient temperature Ta (˚C)
25 50 75 1000
10−6
10−7
10−8
10−9
10−10
VCE=20V
10%
90%
td
tr
ts
tf
VCC
RL
Measuring
terminal
Input
Output
Input Reflector Plate
Response time tr, tf, td, ts (μs)
Load resistance RL (KΩ)
1
10
100
1 000
0.1 1 10 100
VCE=5V
IC=100mA
Ta=25˚C
ts
td
tf
tr
Relative collector current (%)
Sensor moving distance L (mm)
1
20
40
60
80
100
10
30
50
70
90
234 567
4mm
1mm
+
L=0
OMS
IF=20mA
VCE=5V
Ta=25˚C
White Black
Test Card
00
Relative collector current (%)
Sensor moving distance L (mm)
765432
90
70
50
30
10
100
80
60
40
20
1
4mm
1mm
+
L=0
IF=20mA
VCE=5V
Ta=25˚C
White Black
00
Fig.12
Relative Collector Current vs.
Distance (Reference value)
Relative collector current (%)
Distance d (mm)
Al evaporation
glass
IF=20mA
VCE=5V
Ta=25˚C
0 246810
20
40
60
80
100
d
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.
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Sheet No.: D3-A02001EN
GP2S40J0000F
■Design Considerations
●Design guide
1) Prevention of detection error
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
2) Distance characteristic
Please refer to Fig.12 (Relative collector current vs. Distance) to set the distance of the photointerrupter
and the object.
This product is not designed against irradiation and incorporates non-coherent IRED.
●Degradation
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
●Parts
This product is assembled using the below parts.
• Photodetector (qty. : 1)
Category Material Maximum Sensitivity
wavelength (nm)
Sensitivity
wavelength (nm) Response time (μs)
Phototransister Silicon (Si) 930 700 to 1 200 20
• Photo emitter (qty. : 1)
Category Material Maximum light emitting
wavelength (nm) I/O Frequency (MHz)
Infrared emitting diode
(non-coherent) Gallium arsenide (GaAs) 950 0.3
• Material
Case Lead frame Lead frame plating
Black polyphenylene
sulfi de resin 42Alloy SnCu plating
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Sheet No.: D3-A02001EN
GP2S40J0000F
■Manufacturing Guidelines
●Soldering Method
Flow Soldering:
Soldering should be completed below 260˚C and within 5 s.
Soldering area is 1mm or more away from the bottom of housing.
Please take care not to let any external force exert on lead pins.
Please don't do soldering with preheating, and please don't do soldering by refl ow.
Other notice
Please test the soldering method in actual condition and make sure the soldering works fine, since the
impact on the junction between the device and PCB varies depending on the cooling and soldering
conditions.
●Cleaning instructions
Solvent cleaning :
Solvent temperature should be 45˚C or below. Immersion time should be 3 minutes or less.
Ultrasonic cleaning :
Do not execute ultrasonic cleaning.
Recommended solvent materials :
Ethyl alcohol, Methyl alcohol and Isopropyl alcohol.
●Presence of ODC
This product shall not contain the following materials.
And they are not used in the production process for this product.
Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform)
Specifi c brominated fl ame retardants such as the PBBOs and PBBs are not used in this product at all.
This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC).
•Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated
diphenyl ethers (PBDE).
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Sheet No.: D3-A02001EN
GP2S40J0000F
■Package specifi cation
●Sleeve package
Package materials
Sleeve : Polystyrene
Stopper : Styrene-Butadiene
Package method
MAX. 50 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless
stoppers.
MAX. 20 sleeves in one case.
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Sheet No.: D3-A02001EN
GP2S40J0000F
■Important Notices
· The circuit application examples in this publication
are provided to explain representative applications of
SHARP devices and are not intended to guarantee any
circuit design or license any intellectual property rights.
SHARP takes no responsibility for any problems related
to any intellectual property right of a third party resulting
from the use of SHARP's devices.
· Contact SHARP in order to obtain the latest device
specification sheets before using any SHARP device.
SHARP reserves the right to make changes in the
specifi cations, characteristics, data, materials, structure,
and other contents described herein at any time
without notice in order to improve design or reliability.
Manufacturing locations are also subject to change
without notice.
· Observe the following points when using any devices
in this publication. SHARP takes no responsibility for
damage caused by improper use of the devices which
does not meet the conditions and absolute maximum
ratings to be used specifi ed in the relevant specifi cation
sheet nor meet the following conditions:
(i) The devices in this publication are designed for use
in general electronic equipment designs such as:
--- Personal computers
--- Offi ce automation equipment
--- Telecommunication equipment [terminal]
--- Test and measurement equipment
--- Industrial control
--- Audio visual equipment
--- Consumer electronics
(ii) Measures such as fail-safe function and redundant
design should be taken to ensure reliability and safety
when SHARP devices are used for or in connection
with equipment that requires higher reliability such as:
--- Transportation control and safety equipment (i.e.,
aircraft, trains, automobiles, etc.)
--- Traffi c signals
--- Gas leakage sensor breakers
--- Alarm equipment
--- Various safety devices, etc.
(iii) SHARP devices shall not be used for or in
connection with equipment that requires an extremely
high level of reliability and safety such as:
--- Space applications
--- Telecommunication equipment [trunk lines]
--- Nuclear power control equipment
--- Medical and other life support equipment (e.g.,
scuba).
· If the SHARP devices listed in this publication fall
within the scope of strategic products described in the
Foreign Exchange and Foreign Trade Law of Japan, it
is necessary to obtain approval to export such SHARP
devices.
· This publication is the proprietary product of SHARP
and is copyrighted, with all rights reserved. Under
the copyright laws, no part of this publication may be
reproduced or transmitted in any form or by any means,
electronic or mechanical, for any purpose, in whole or in
part, without the express written permission of SHARP.
Express written permission is also required before any
use of this publication may be made by a third party.
· Contact and consult with a SHARP representative
if there are any questions about the contents of this
publication.
[H145]
