Transistor 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD592 and 2SD592A Unit: mm 5.00.2 Low collector to emitter saturation voltage VCE(sat). High transition frequency fT. Absolute Maximum Ratings Parameter (Ta=25C) Symbol Collector to 2SB621 base voltage 2SB621A Collector to 2SB621 Ratings -30 VCBO -60 -25 VCEO emitter voltage 2SB621A Emitter to base voltage VEBO Peak collector current ICP -50 Unit V V -5 V -1.5 A Collector current IC -1 A Collector power dissipation PC 750 mW Junction temperature Tj 150 C Storage temperature Tstg -55 ~ +150 C Electrical Characteristics Symbol ICBO Collector to base 2SB621 voltage 2SB621A Collector to emitter 2SB621 voltage 2SB621A Emitter to base voltage 1.27 1.27 1 2 3 2.540.15 Conditions min typ VCB = -20V, IE = 0 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A IC = -10A, IE = 0 VCEO IC = -2mA, IB = 0 VEBO IE = -10A, IC = 0 -5 VCE = -10V, IC = -500mA 85 VCE = -5V, IC = -1A 50 * hFE2 max Unit - 0.1 A -30 VCBO hFE1 Forward current transfer ratio +0.2 0.45 -0.1 (Ta=25C) Parameter Collector cutoff current +0.2 0.45 -0.1 2.30.2 13.50.5 5.10.2 Features 4.00.2 V -60 -25 V -50 V 340 Collector to emitter saturation voltage VCE(sat) IC = -500mA, IB = -50mA - 0.2 -0.4 V Base to emitter saturation voltage VBE(sat) IC = -500mA, IB = -50mA - 0.85 -1.2 V Transition frequency fT VCB = -10V, IE = 50mA, f = 200MHz 200 Collector output capacitance Cob VCB = -10V, IE = 0, f = 1MHz 20 *h FE1 MHz 30 pF Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 1 Transistor 2SB621, 2SB621A PC -- Ta IC -- VCE 1.0 IC -- IB -1.5 -1.2 0.7 0.6 IB=-10mA -9mA -8mA -1.0 -7mA -6mA - 0.75 0.5 0.4 -5mA -4mA -3mA - 0.5 0.3 0.2 -2mA - 0.25 -1mA - 0.6 - 0.4 - 0.2 60 80 100 120 140 160 0 0 -8 -10 -10 -3 -1 Ta=75C 25C -30 -10 -3 25C Ta=-25C -1 75C - 0.1 - 0.03 - 0.03 -1 -3 -10 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 Collector current IC (A) Collector output capacitance Cob (pF) 140 120 100 80 60 40 20 0 3 10 30 Emitter current IE (mA) 100 -8 -10 -12 VCE=-10V -3 400 350 300 Ta=75C 250 200 25C 150 -25C 100 50 0 - 0.01 - 0.03 - 0.1 - 0.3 -10 -1 -3 -10 Collector current IC (A) VCER -- RBE -120 IE=0 f=1MHz Ta=25C 45 40 35 30 25 20 15 10 5 0 -1 -6 450 Cob -- VCB 160 1 -1 50 VCB=-10V Ta=25C 180 -4 500 Collector current IC (A) fT -- IE 200 -2 Base current IB (mA) IC/IB=10 - 0.3 -25C - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 0 hFE -- IC -100 Base to emitter saturation voltage VBE(sat) (V) -30 - 0.1 -6 VBE(sat) -- IC IC/IB=10 - 0.3 -4 Collector to emitter voltage VCE (V) VCE(sat) -- IC -100 -2 Forward current transfer ratio hFE 40 -3 -10 -30 -100 Collector to base voltage VCB (V) Collector to emitter voltage VCER (V) 20 Ambient temperature Ta (C) Collector to emitter saturation voltage VCE(sat) (V) - 0.8 0 0 Transition frequency fT (MHz) -1.0 0.1 0 2 VCE=-10V TC=25C Collector current IC (A) -1.25 0.8 Collector current IC (A) Collector power dissipation PC (W) Ta=25C 0.9 IC=-10mA Ta=25C -100 -80 -60 2SB621A -40 2SB621 -20 0 0.1 0.3 1 3 10 30 100 Base to emitter resistance RBE (k) Transistor 2SB621, 2SB621A ICEO -- Ta 104 Area of safe operation (ASO) -10 VCE=-10V Single pulse Ta=25C -3 Collector current IC (A) ICP -1 IC t=10ms - 0.3 102 t=1s - 0.1 - 0.03 10 - 0.003 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) - 0.001 - 0.01 - 0.03 - 0.1 - 0.3 -1 2SB621A - 0.01 2SB621 ICEO (Ta) ICEO (Ta=25C) 103 -3 -10 Collector to emitter voltage VCE (V) 3