1
Transistor
2SB621, 2SB621A
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD592 and 2SD592A
■Features
●Low collector to emitter saturation voltage VCE(sat).
●High transition frequency fT.
■Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0±0.2 4.0±0.2
5.1±0.213.5±0.5
0.45
+0.2
–0.1
0.45
+0.2
–0.1
1.27 1.27
2.3±0.2
2.54±0.15
213
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–30
–60
–25
–50
–5
–1.5
–1
750
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
2SB621
2SB621A
2SB621
2SB621A
■Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCBO
VCEO
VEBO
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –500mA
VCE = –5V, IC = –1A
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
V
CB
= –10V, I
E
= 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–30
–60
–25
–50
–5
85
50
typ
– 0.2
– 0.85
200
20
max
– 0.1
340
–0.4
–1.2
30
Unit
µA
V
V
V
V
V
MHz
pF
2SB621
2SB621A
2SB621
2SB621A
*hFE1 Rank classification
Rank Q R S
hFE1 85 ~ 170 120 ~ 240 170 ~ 340
2
Transistor 2SB621, 2SB621A
0 16040 12080 14020 10060
0
1.0
0.8
0.6
0.4
0.2
0.9
0.7
0.5
0.3
0.1
Ambient temperature Ta (˚C)
Collector power dissipation P
C
(W)
0 –10–8–2 –6–4
0
–1.5
–1.25
–1.0
– 0.75
– 0.5
– 0.25
Ta=25˚C
I
B
=–10mA
–1mA
–2mA
–3mA
–4mA
–5mA
–6mA
–7mA
–8mA
–9mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
0 –12–10–8–2 –6–4
0
–1.2
–1.0
– 0.8
– 0.6
– 0.4
– 0.2
V
CE
=–10V
T
C
=25˚C
Base current I
B
(mA)
Collector current I
C
(A)
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100 I
C
/I
B
=10
–25˚C
Ta=75˚C
25˚C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V)
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100 I
C
/I
B
=10
Ta=–25˚C
75˚C
25˚C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V)
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
0
500
400
300
200
100
450
350
250
150
50
V
CE
=–10V
Ta=75˚C
25˚C
–25˚C
Collector current I
C
(A)
Forward current transfer ratio h
FE
1 3 10 30 100
0
200
160
120
80
40
180
140
100
60
20
V
CB
=–10V
Ta=25˚C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz)
–1 –3 –10 –30 –100
0
50
40
30
20
10
45
35
25
15
5
I
E
=0
f=1MHz
Ta=25˚C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF)
0.1 1 10 1000.3 3 30
0
–120
–100
–80
–60
–40
–20
I
C
=–10mA
Ta=25˚C
2SB621A
2SB621
Base to emitter resistance R
BE
(kΩ)
Collector to emitter voltage V
CER
(V)
PC—Ta I
C—V
CE IC—I
B
VCE(sat) —I
CVBE(sat) —I
ChFE —I
C
fT—I
ECob —V
CB VCER —R
BE
3
Transistor 2SB621, 2SB621A
0 16040 12080 14020 10060
1
10
10
2
10
3
10
4
V
CE
=–10V
Ambient temperature Ta (˚C)
I
CEO
(Ta)
I
CEO
(Ta=25˚C)
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
– 0.001
– 0.003
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10 Single pulse
Ta=25˚C
t=10ms
2SB621A
2SB621
t=1s
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
ICEO — Ta Area of safe operation (ASO)
