NPN HIGH CURRENT SWITCHING TABLE 11 NPN SILICON PLANAR HIGH CURRENT SWITCHING TRANSISTORS The transistors shown in this table are designed for high current, high dissipation switching applications in Industrial and Military equipments. This table should be referred to in conjunction with the LF Power Transistor Section which contains full details of the available range of High Power Transistors. The devices are listed in order of decreasing Breakdown Voltages (Vcg and Vcgq), decreasing Collector Current (ic), Power Dissipation (Pio,), etc. Switching Max VcetsatiT hee Times Max at at (Typ) at Prot Type Ves |Vceo} Ic - at T, Package | Comple- le | Ig |Min.JMax.]} Ic | ton | tote Mic | = 25C ment Vv Vv A|VIAIA Aljlns|ns |A WwW BUY82 | 150 } 60 } 10 } 1410) 1 =) 40) )1.5) 320) 245) 10) 30 TO-39 | BUYS2 15} | 10 BUY81 | 150 | 60 | 7.5] 1 |7.5/0.75) 40) 1|160| 430}; 5| 24 TO-39 | BUY91 10}; |7.5 BUY80 ; 150 | 60 | 5 | 1 510.5 | 40) |0.5;170} 200} 5) 20 TO-39 | BUY90 15} | 5 2N3419 | 125 | 80 | 5*] 1 5|/0.5 | 20; 60] 1 |300/1200; 1 30 TO-39 2N3421 | 125 | 80 | 5*!] 1 5 {0.5 | 40] 120; 1 | 300|1200| 1 30 TO-39 _ BUX34 | 120 | 60] 5] 1 510.5 | 40/150} 2 4140} 180) 5) 20 TO-39 _ BFX34 | 120 | 60} 5*| 1 50.5 | 40/150] 2/140] 180] 5 5 TO-39 _ BSV64 | 100 | 60 | 5*! 1 510.5 | 40; | 2] 140] 180] 5 5 TO-39 _ 2N3418 | 85 | 60 | 5*| 1 510.5 | 20] 60} 1 | 300/1200; 1 30 TO-39 2N3420 | 85 | 60 | 5*} 1 5|0.5 | 40] 120] 1 |300/1200; 1 30 TO-39 _ *lom TPulsed 300s PNP HIGH CURRENT SWITCHING TABLE 12- PNP SILICON PLANAR HIGH CURRENT SWITCHING TRANSISTORS The transistors shown in this table are designed for high current, high dissipation switching applications in Industrial and Military equipments. This table should be referred to in conjunction with the LF Power Transistor Section which contains full details of the available range of High Power Transistors. The devices are listed in order of decreasing Breakdown Voltages (Vcg and Veg), decreasing Collector Current (ic), Power Dissipation (P,,;), etc. Switching Max Veeisat)! hee Times Max at at (Typ) at Prot 5 Type Vee {Vceo! !c | at Toase| Package | Comptle- lc | Je |Min.jJMax. ton | tore | le | = 25C ment ns | ns [A Ww -~Jol- 30 TO-39 | BUY82 --FJ-d- 24 TO-39 | BUY81 -~f{[- J- 20 TO-39 | BUY80 VIiAILA BUY92 | 100 | 60 | 7.5] 1 | 7.5/0.75) 40] 1 1 BUY91 | 100 | 60] 5 5 10.5 | 40] BUY90 } 100 | 60 | 3 3 }0.3 | 40] 3 oa] > [Pulsed 300s MC12 PLANAR SWITCHING PLANAR SWITCHING TRANSISTOR SELECTOR CHART Devices listed are NPN except where marked with * which signifies PNP. Package lc yo-39 | to-39 | to-39 | to-39 | 10-39 | To-39 Vceo 1A 2A 3A 5A 7.58 10A Volts 40 2N4037" BSV60 2N3418 | BUX34 BSV64 BUY81 60 2N4036* 23420 | BUY8O BUY82 BFX34 BUY92" Buygo* | BuY91* 80 2N4000 2N3419 2N3421 100 2N4001 TO-39 Pg SWITCHING TABLE 6NPN SILICON PLANAR HIGH CURRENT SWITCHING TRANSISTORS The transistors shown in this table are designed for high current, high dissipation switching applications in Industrial and Military equipments. The devices are fisted in order of decreasing Collector Current, Breakdown Voltage, Power Dissipation, etc. Max Vceisat} hee Switching Times Prot Ic at at at at Type (Max) | Vceo Tease | Package Ic le ; Ic Ton tort Ic =25C A v Vv A A j[min.}max.| A ns | ns A WwW BUY82 10 60 1 10 | 0.75] 15 - 10 | 320 | 245} 10 30 TO-39 BUY81 7.5 60 1 7.5/0.5 ] 10 - | 7.5 | 160} 430] 5 24 TO-39 BUY80 5 60 1 5 | 0.5] 15 - 5 | 170] 200/ 5 20 TO-39 BUX34 5 60 1 5 | 0.5] 40 | 150} 2 | 140; 180) 5 20 TO-39 BSV60 5 40 0.9 | 2 | 0.2 | 40 | 120} 2 | 500 ;1000; 1 6.2 | TO-39 2N3419 3 80 0.5 | 2 | 0.2 | 20 | 60 1 300 |1200} 1 30 TO-39 2N3420 3 80 0.5} 2 | 0.2] 40 | 120) 1 300 | 1200] 1 30 TO-39 2N3418 3 60 0.5 | 2 {0.2 ] 20 | 60 1 300 | 1200} 1 30 TO-39 2N3421 3 60 0.5 {| 2 | 0.2 | 40 | 120] 1 300 |} 1200} 1 30 TO-39 BFX34 2 60 1 5 | 05] 40 | 150] 2 140 | 180 | 5 5 TO-39 BSV64 2 60 1 5 | 0.5 | 40 - 2 140 | 180 | 5 5 TO-39 2N4001 1 100 | 0.5 1 0.1 | 40 | 120 | 0.5 |-300 | 2000] 0.5 20 TO-39 2N4000 1 80 0.5 1 0.1 | 30 | 120 | 0.5 | 300 [2000] 0.5 20 TO-39 TABLE 7 PNP SILICON PLANAR HIGH CURRENT SWITCHING TRANSISTORS The transistors shown in this table are designed for high current, high dissipation switching applications in Industrial and Military equipments. The devices are listed in order of decreasing Collector Current, Breakdown Voltage, Power Dissipation, etc. Max Vceisat) hee Switching Times Prot le at at f at at Type (Max) | Vceo Tease Package Ic iF le ton lott Ic = 25C A Vv Vv A A | min. }max.| A ns | ns A w BUY92 7.5 60 1 7.5} 0.75] 40 - 1 - - _ 30 TO-39 BUY91 5 60 1 5 | 0.5 |) 40 - 1 _ - - 25 TG-39 BUY90 3 60 1 3 | 0.3 | 40 _ 1 _ _ _ 20 TO-39 2N4036 1 65 | 0.65]0.1510.015| 40 | 140 [0.15] 110 | 700 | 0.15 1* TO-39 2N4037 1 40 1.4 |0.15/0.015} 50 | 250 ]0.15] - - 1* | TP-39 *at Tamb = 25C P10