MMBT4401-G (NPN)
RoHS Device
QW-BTR32 Page 1
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Features
-Switching Transistor
1
Base
2
Emitter
Collector
3
General Purpose Transistor
Company reserves the right to improve product design , functions and reliability without notice.
Dimensions in inches and (millimeter)
SOT-23
3
1 2
0.118(3.00)
0.110(2.80)
0.055(1.40)
0.047(1.20)
0.079(2.00)
0.071(1.80)
0.041(1.05)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.006(0.15)
0.003(0.08)
0.100(2.55)
0.089(2.25)
0.004(0.10) max
0.012(0.30)
0.020(0.50)
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector power dissipation
Thermal resistance, junction to ambient
Junction temperature
Storage temperature range
UnitsSymbol
Parameter
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
TSTG
Value
60
40
6
600
300
417
150
-55 to +150
V
V
V
mA
mW
°C/W
°C
°C
Maximum Ratings (at Ta=25°C unless otherwise noted)
Circuit Diagram
QW-BTR32 Page 2
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General Purpose Transistor
Company reserves the right to improve product design , functions and reliability without notice.
Electrical Characteristics (@TA=25°C unless otherwise noted)
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
Units
Symbol
Parameter Min.Conditions
IC=100μA, IE=0
IC=1mA, IB=0
IE=100μA, IC=0
IC=150mA, IB=15mA
IC=150mA, IB=15mA
IC=150mA, IB1=15mA
VCC=30V, VBE(off)=-2V,
IB1=IB2=15mA
VCC=30V, IC=150mA
Max.
V(BR)CBO
VCE(sat)
fT
td
tr
tS
tf
V(BR)CEO
V(BR)EBO
VBE(sat)
60
40
6
250
DC current gain VCE=1V, IC=150mA
hFE 100 300
0.4
0.95
15
20
225
30
V
V
V
V
V
Collector cut-off current
Base cut-off current
VCB=50V, IE=0
VEB=5V, IC=0
ICBO
IEBO
100
100
nA
nA
Collector cut-off current VCE=30V, IB=0
ICEO 100 nA
MHz
nS
nS
nS
nS
VCE=10V, IC=20mA
f=100MHz
RATING AND CHARACTERISTIC CURVES (MMBT4401-G)
Page 3
QW-BTR32
REV:B
General Purpose Transistor
Company reserves the right to improve product design , functions and reliability without notice.
Fig.1 - Static Characteristic
Collector Current, IC (mA)
Collector-Emitter Voltage, VCE (V) Collector Current, Ic (mA)
DC Current Gain, hFE
Fig.2 - hFE — IC
Collector Current, Ic (mA)
Fig.3 - VCEsat — IC
Collector - Emitter Saturation
Voltage, VCEsat (mV)
600
Collector Current, Ic (mA)
0
0.1
800
10
1000
100
400
Base - Emitter Saturation
Voltage, VBEsat (mV)
Fig.4 - VBEsat — IC
600
10
0.1 10
1000
100
100
β = 10
Ta=100°C
Ta= 25°C
1 1
600
200
Ta=100°C
Ta= 25°C
β = 10
110 600
10
100
1000
100
COMMON EMITTER
VCE = 1V
Ta=100°C
Ta=25°C
0
50
100
150
250
200
1234
0
COMMON
EMITTER
Ta=25°C
IB=0.1mA
1mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
Page 4
QW-BTR32
REV:B
RATING AND CHARACTERISTIC CURVES (MMBT4401-G)
General Purpose Transistor
Company reserves the right to improve product design , functions and reliability without notice.
1
Fig.5 - ICVBE —
Base - Emmiter Voltage, VBE (mV)
0.2 0.4 0.80.6 0.0
0.1
10
100
600
1.2
Ta=100°C
Ta= 25°C
COMMON EMITTER
VCE = 1V
Collector Current, Ic (mA)
Fig.6 - FT — IC
10 20 30 40
10
100
500
Fig.8 - PC — Ta
Ambient Temperature, Ta (°C)
Collector Power Dissipation, Pc (mW)
0 25 50 75 100 125 150
0
100
200
300
400
Fig.7 - Cob/Cib — VCB/VEB
Capacitance, C (pF)
0.1 110 30
0
10
100
Reverse Voltge, V (V)
Cib
Cob
f=1MHZ
IE=0/IC=0
Ta=25°C
20
1.0
Transtion frequency, fT (MHZ)
VCE=10V
COMMON EMITTER
TA=25°C
0
Collector Current, IC (mA)
Page 5
QW-BTR32
REV:B
General Purpose Transistor
Reel Taping Specification
B C dD D2D1
SOT-23
SYMBOL
A
(mm)
(inch) 2.142 ± 0.039
4.00 ± 0.10
Φ1.50 0.10±54.40 ± 1.00 13.00 ± 1.00
4.00 ± 0.10 2.00 ± 0.10
178 ± 2.00
Φ0.059 ± 0.004 7.008 ± 0.079 0.512 ± 0.039
SYMBOL
(mm)
(inch) 0. ± 0.004157 0.157 ± 0.004 0.079 ± 0.004
E F P P0P1W W1
1.75 ± 0.10
0.069 ± 0.004
3.50 ± 0.10
0.138 ± 0.004
SOT-23
3.15 ± 0.10
0.124 ± 0.004
2.77 ± 0.10
0.109 ± 0.004
1.22 ± 0.10
0.048 ± 0.004
12.30 ± 1.00
0.484 ± 0.039
8.00 0.30 /+–0.10
0.315 0.012 /+–0.004
d
F E
B
P1 P0
o
120
D1
D2
W1
P
D
A
W
T
C
Company reserves the right to improve product design , functions and reliability without notice.
Page 6
QW-BTR32
REV:B
General Purpose Transistor
Part Number
MMBT4401-G
Marking Code
2X
Marking Code
XX
3
1 2
xx = Product type marking code
Suggested PAD Layout
SIZE
(inch)
0.031
(mm)
0.80
1.90
2.02
0.075
0.080
SOT-23
2.82 0.111
A
B
C
D
A
C
B
D
Standard Packaging
Case Type
SOT-23 3,000
REEL
( pcs )
Reel Size
(inch)
7
REEL PACK
Company reserves the right to improve product design , functions and reliability without notice.
