Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol Ty
p
Max
70 90
100 125
RθJL 63 80
Junction and Storage Temperature Range
A
PD
°C
1.4
0.9
-55 to 150
TA=70°C
ID
3.6
2.9
15
Pulsed Drain Current B
Power Dissipation A
TA=25°C
Continuous Drain
Current A
Maximum UnitsParameter
TA=25°C
TA=70°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V±20Gate-Source Voltage
Drain-Source Voltage 30
°C/W
Maximum Junction-to-Ambient ASteady-State °C/W
W
Maximum Junction-to-Lead CSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient At ≤ 10s RθJA
AO3406
N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 30V
ID = 3.6A (VGS = 10V)
RDS(ON) < 65mΩ (VGS = 10V)
RDS(ON) < 105mΩ (VGS = 4.5V)
General Description
The AO3406 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3406 is Pb-free
(meets ROHS & Sony 259 specifications). AO3406L
is a Green Product ordering option. AO3406 and
A
O3406L are electrically identical.
G
D
S
S
GD
TO-236
(SOT-23)
Top View
Alpha & Omega Semiconductor, Ltd.
AO3406
Symbol Min Typ Max Units
BVDSS 30 V
1
TJ=55°C 5
IGSS 100 nA
VGS(th) 1 1.9 3 V
ID(ON) 15 A
50 65
TJ=125°C 74 100
75 105 mΩ
gFS 7S
VSD 0.79 1 V
IS2.5 A
Ciss 288 375 pF
Coss 57 pF
Crss 39 pF
Rg36Ω
Qg(10V) 6.5 8.5 nC
Qg(4.5V) 3.1 4 nC
Qgs 1.2 nC
Qgd 1.6 nC
tD(on) 4.6 ns
tr1.9 ns
tD(off) 20.1 ns
tf2.6 ns
trr 10.2 14 ns
Qrr 3.5 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge IF=3.6A, dI/dt=100A/µs
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=3.6A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VDS=5V, ID=3.6A
VGS=10V, VDS=5V
VGS=10V, ID=3.6A
VDS=0V, VGS=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
IDSS µA
Gate Threshold Voltage VDS=VGS ID=250µA
VDS=24V, VGS=0V
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
mΩ
VGS=4.5V, ID=2.8A
IS=1A
Turn-On Rise Time
Gate resistance
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Total Gate Charge
VGS=0V, VDS=0V, f=1MHz
Reverse Transfer Capacitance
Turn-Off DelayTime
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Gate Drain Charge
DYNAMIC PARAMETERS
VGS=10V, VDS=15V, ID=3.6A
VGS=10V, VDS=15V, RL=2.2Ω,
RGEN=3Ω
Gate Source Charge
Turn-On DelayTime
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Rev 5 : July 2005
Alpha and Omega Semiconductor, Ltd.
AO3406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
012345
VDS (Volts)
Fig 1: On-Region Characteristics
ID (A)
VGS=3V
3.5V
4V6V
10V
0
2
4
6
8
10
1.5 2 2.5 3 3.5 4 4.5 5
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
40
50
60
70
80
90
100
0246810
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
IS (A)
25°
125°
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
VGS=10V
VGS=4.5V
0
50
100
150
200
246810
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=5V
V
GS
=4.5V
V
GS
=10V
ID=3.6A
25°C
125°C
ID=3.6A
4.5V
Alpha and Omega Semiconductor, Ltd.
AO3406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
2
4
6
8
10
01234567
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS (Volts)
0
100
200
300
400
0 5 10 15 20 25 30
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
5
10
15
20
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power ( W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
Coss
Cr
ss
0.1
1.0
10.0
100.0
0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
10ms
1ms
0
.1
s
1
s
1
0s
D
C
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
VDS=15V
ID=3.6A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
T
o
nT
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
10
µ
s
Alpha and Omega Semiconductor, Ltd.
