5STP 30T1800 5STP 30T1800 Old part no. T 989C-3030-18 Phase Control Thyristor Properties High operational capability Possibility of serial and parallel connection Applications Controlled rectifiers AC drives Key Parameters V DRM , V RRM = 1 800 I TAVm = 3 108 I TSM = 47 000 V TO = 0.984 rT = 0.081 V A A V m Types VRRM, VDRM 5STP 30T1800 1 800 V Conditions: Tj = -40 / 125 C, half sine waveform, f = 50 Hz Mechanical Data Fm Mounting force m Weight DS Surface cr epage distance 16 mm Da Air strike distance 7 mm 50 5 kN 0.62 kg Fig. 1 Case ABB s.r.o. Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic tel.: +420 261 306 250, http://www.abb.com/semiconductors TS - T/113/04a Jul-11 1 of 5 5STP 30T1800 Maximum Ratings Maximum Limits Unit 1 800 V 4 882 A 3 108 A tp = 10 ms tp = 8.3 ms 47 000 50 200 A tp = 10 ms tp = 8.3 ms 11 050 000 10 460 000 A2s 200 A/s 1 000 V/s VRRM VDRM Repetitive peak reverse and off-state voltage ITRMS RMS on-state current Tj = -40 125 C Tc = 70 C, half sine waveform, f = 50 Hz ITAVm Average on-state current Tc = 70 C, half sine waveform, f = 50 Hz ITSM Peak non-repetitive surge half sine pulse, VR = 0 V I2t Limiting load integral half sine pulse, VR = 0 V (diT/dt)cr Critical rate of rise of on-state current IT = ITAVm, half sine waveform, f = 50 Hz, VD = 2/3 VDRM, tr = 0.3 s, IGT = 2 A (dvD/dt)cr Critical rate of rise of off-state voltage VD = 2/3 VDRM PGAVm Maximum average gate power losses 5 W IFGM Peak gate current 10 A VFGM Peak gate voltage 12 V VRGM Reverse peak gate voltage 10 V Tjmin - Tjmax Operating temperature range -40 / 125 C Tstgmin Tstgmax Storage temperature range -40 / 125 C Unless otherwise specified Tj = 125 C ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - T/113/04a Jul-11 2 of 5 5STP 30T1800 Characteristics Value min. VTM typ. Maximum peak on-state voltage Unit max. 1.300 V ITM = 4 000 A VT0 Threshold voltage 0.984 V rT Slope resistance 0.081 m IT1 = 3 864 A, IT2 = 11 591 A IDM Peak off-state current 200 mA 200 mA 2 s VD = VDRM IRM Peak reverse current VR = VRRM tgd Delay time Tj = 25 C, VD = 0.4 VDRM, ITM = ITAVm, tr = 0.3 s, IGT = 2 A tq Turn-off time 200 s 2 800 C IT = 2 000 A, diT/dt = 12.5 A/s, VD = 2/3 VDRM, dvD/dt = 50 V/s Qrr Recovery charge the same conditions as at tq IH Holding current Tj = 25 C Tj = 125 C 170 90 mA IL Latching current Tj = 25 C Tj = 125 C 1 500 1 000 mA VGT Gate trigger voltage Tj = - 40 C Tj = 25 C Tj = 125 C VD = 12V, IT = 4 A IGT Gate trigger current VD = 12V, IT = 4 A Tj = - 40 C Tj = 25 C Tj = 125 C V 0.25 4 3 2 mA 10 500 250 150 Unless otherwise specified Tj = 125 C Thermal Parameters Rthjc Thermal resistance junction to case Value Unit 10.0 K/kW double side cooling Rthch anode side cooling 16.0 cathode side cooling 26.5 Thermal resistance case to heatsink 3.0 K/kW double side cooling single side cooling 6.0 ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - T/113/04a Jul-11 3 of 5 5STP 30T1800 Transient Thermal Impedance i Analytical function for transient thermal impedance i( 4 Z thjc R i (1 exp( t / 2 3 4 0.3225 0.1186 0.0095 0.0025 7.00 1.61 0.92 0.47 Ri( K/kW ) i )) Transient thermal impedance junction to case Zthjc ( K/kW ) i 1 Conditions: Fm = 50 5 kN, Double side cooled Correction for periodic waveforms 180 sine: s) 1 add 1.0 K/kW 180 rectangular: add 1.0 K/kW 120 rectangular: add 1.5 K/kW 60 rectangular: add 3.0 K/kW 12 10 8 6 4 2 0 0,001 0,01 0,1 1 10 Square w ave pulse duration t d ( s ) IT ( A ) 20000 75 16 i2dt I TSM 70 15 65 14 14000 60 13 12000 55 12 50 11 45 10 4000 40 9 2000 35 8 18000 16000 10000 8000 6000 0 0 0,5 1 1,5 2 Fig. 3 Maximum on-state characteristics 2,5 3 VT (V) 30 1 10 t ( ms ) 7 100 Fig. 4 Surge on-state current vs. pulse length, half sine wave, single pulse, VR = 0 V, Tj = Tjmax ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - T/113/04a Jul-11 4 of 5 i 2dt (106 A2s) T j = 25 C 125 C 22000 ITSM ( kA ) Fig. 2 Dependence transient thermal impedance junction to case on square pulse 6000 = 30 60 90 120 180 5000 PT ( W ) PT ( W ) 5STP 30T1800 6000 = 30 60 90 120 180 5000 DC 270 4000 4000 3000 3000 2000 2000 1000 1000 0 DC 0 0 1000 2000 3000 0 1000 2000 I TAV ( A ) 130 I TAV ( A ) Fig. 6 On-state power loss vs. average on-state current, square waveform, f = 50 Hz, T = 1/f 130 TC ( C ) TC ( C ) Fig. 5 On-state power loss vs. average on-state current, sine waveform, f = 50 Hz, T = 1/f 3000 120 120 110 110 100 100 90 90 DC 80 80 DC 270 70 70 = 30 60 90 120 180 60 = 30 60 0 1000 2000 3000 I TAV ( A ) Fig. 7 Max. case temperature vs. aver. on-state current, sine waveform, f = 50 Hz, T = 1/f 0 1000 60 90 120 180 2000 3000 I TAV ( A ) Fig. 8 Max. case temperature vs. aver. on-state current, square waveform, f = 50 Hz, T = 1/f Notes: ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - T/113/04a Jul-11 5 of 5 5STP 30T1800 POLOVODICE, a.s., Novodvorska 1786/138a, 142 21 Praha 4, Czech Republic POLOVODICE, a.s. reserves the right to change the specifications and information contained herein at any time without notice KON Jul-11 6 of 5