- CEP4060L/CEB4060L March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V , 15A, Roson=90MQ @Ves=10V. Rosoon=100mMQ @Vas=5.0V. e Super high dense cell design for extremely low Ros(on). e High power and current handling capability. e T0-220 & TO-263 package. CEB SERIES T0-263(DD-PAK) CEP SERIES TO-220 LF] 3 S ABSOLUTE MAXIMUM RATINGS (Tc=25C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDs 60 V Gate-Source Voltage Ves +16 V Drain Current-Continuous ID 6 A -Pulsed IDM 45 A Drain-Source Diode Forward Current Is 15 A Maximum Power Dissipation @Tc=25C Pp 30 W Derate above 25C 0.3 wicc Operating and Storage Temperature Range | Tu, TSTG -65 to 175 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Ruc 3 C/W Thermal Resistance, Junction-to-Ambient R@JA 62.5 C/W 4-47CEP4060L/CEB4060L ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted) Parameter Symbol Condition Min | Typ | Max | Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVoss | Ves=0V, ID=250,A 60 V Zero Gate Voltage Drain Current loss Vos=60V, Ves= OV 25 | A Gate-Body Leakage lass Ves =+16V, Vos=0V +100} nA ON CHARACTERISTICS Gate Threshold Voltage Vesith) | Vos=Ves, ln= 250uA 1 |15 ] 2] V Drain-Source On-State Resistance RDs(ON) Vas=5V,In=7.5A 75 | 100 | mo Ves=10V, Ip=15A 61 | 90 | mQ On-State Drain Current ID(ON) Ves = 5V, Vos= 10V 15 A Forward Transconductance Ors Vos= 10V, ln=7.5A 11 S DYNAMIC CHARACTERISTICS Input Capacitance Ciss 430 | 600 | PF Vps =25V, Ves = 0V Output Capacitance Coss f= OMHz 126 | 200 | PF Reverse Transfer Capacitance Crss 28 | 50 | PF SWITCHING CHARACTERISTICS Turn-On Delay Time {D(ON) Vpn = 30V, 8 | 20 | ns Rise Time tr Vee 140 | 250 | ns Turn-Off Delay Time {D(OFF) Reen =512 30 | 100 | ns Fall Time t 60 | 150 | ns Total Gate Charge Qg 15 | 17 | nC Gate-Source Charge Qs ie Ay b= 15A, 3 nc Gate-Drain Charge Qua 2 nC 4-48CEP4060L/CEB4060L ELECTRICAL CHARACTERISTICS (Tc=25 C unless otherwise noted) Parameter Symbol Condition Min | Typ | Max | Unit 4 DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage Vsp Ves = OV, Is =7.5A 09} 13) V Notes a.Pulse Test:Pulse Width <300 ws, Duty Cycle < 2%. b.Guaranteed by design, not subject to production testing, . / Vos=10.9.8,78.5.4V ah / _ if _ A = 7] Vas=3V = y ~fizstc 5 6 10 6 6 3 4 0 - 0 0 O05 10 15 20 25 30 1 2 3 4 5 6 Vps, Drain-to-Source Voltage (V) Vas, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics C, Capacitance (pF) Rps(on), Normalized Drain-Source On-Resistance 0 10 20 30 40 50 Vos, Drain-to Source Voltage (V) Figure 3. Capacitance 4-49 25 2.0 Tj=125C 1.5 1.0 0.5 0 0 5 10 15 20 25 Ip, Drain Current (A) Figure 4. On-Resistance Variation with Drain Current and TemperatureCEP4060L/CEB4060L Vth, Normalized Gate-Source Threshold Voltage Qrs, Transconductance (S) Vas, Gate to Source Voltage (V) Vps=Ves Ip=250 uA 1.0 0.9 0.8 0.7 0.6 0 -25 0 25 50 75 100 125 150 Tj, Junction Temperature (C) Figure 5. Gate Threshold Variation with Temperature Vps=10V 5 10 15 20 Ips, Drain-Source Current (A) Figure 7. Transconductance Variation with Drain Current 10 I | / 8 | Vos=48V L In=15A V4 6 L a LA sL-IZ LL A 0 2 4 6 8 10 12 14 16 Qg, Total Gate Charge (nC) Figure 9. Gate Charge 4-50 BVpss, Normalized Drain-Source Breakdown Voltage Is, Source-drain current (A) Ip, Drain Current (A) 1.15 Ip=250 w A AA 1.10 1.05 == 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature (C) Figure 6. Breakdown Voltage Variation with Temperature 20 10 Vas=0V 0.1 0.4 0.6 0.8 1.0 1.2 1.4 Vsp, Body Diode Forward Voltage (V) Figure 8. Body Diode Forward Voltage Variation with Source Current 70 10 1 Single T 0.5 1 10 60 100 Vos, Drain-Source Voltage (V) Figure 10. Maximum Safe Operating AreaCEP4060L/CEB4060L Vbpp RL td(on) > VIN hoon D Vout Vas VOUT INVERTED @) RGEN G Ss VIN = PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms r(t), Normalized Effective Transient Thermal Impedance - KN 0.1 1. Rouc (t)=r (t) * Rosc 2. Reuc=See Datasheet 3. Tuw-Tc = P* Rouc (t) 4. Duty Cycle, D=t1/t2 0.01 0.01 0.1 1 10 100 1000 10000 Square Wave Pulse Duration (msec) Figure 13. Normalized Thermal Transient Impedance Curve 4-51