2. 30¡ À0. 05
1. 25¡ À0. 05
1.30¡À0.03
0.30
2.00¡À0.051.01 R
EF
SOT-323 Plastic-Encapsulated Diode
MMBD4148W /BAS16W SWITCHING DIODE
FEATURES
Power dissipation
PD: 200 mW (Tamb=25℃)
Collector current
IO: 150 mA
Collector-base voltage
VR: 75 V
Operating and storage junction temperature range
TJ, T stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V(BR) R I
R= 100µA 75 V
Reverse voltage leakage current IR V
R=75V 1
µA
Forward voltage VF
IF=1 mA
IF=10 mA
IF=50 mA
IF=150mA
0.715
0.855
1
1.25
V
Diode capacit a nce CD V
R=0V, f=1MHz 2 pF
Reveres recover y time trr IF=IR=10mA
Irr=0.1×IR 4 nS
Unit: mm
SOT-323
Marking: A2, KA2, KT1
Transys
Electronics
LI
M
ITE
D
