MSC1150M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features * * * * * * 1025 - 1150 MHz 50 VOLTS INTERNAL INPUT/OUTPUT MATCHING POUT = 150 WATTS GP = 7.8 dB MINIMUM COMMON BASE CONFIGURATION DESCRIPTION: The MSC1150M is a NPN bipolar transistor specifically designed for high peak pulse power applications such as DME/TACAN. This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions. Internal impedance matching provides consistent broadband performance. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C) Symbol PDISS IC VCC TJ T STG Parameter Power Dissipation Device Current Collector-Supply Voltage* Junction Temperature Storage Temperature Value 400 11 55 200 -65 to +200 Unit W A V C C Thermal Data MSCXXXX.PDF 01-19-99 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at WWW.ADVANCEDPOWER.COM or contact our factory direct. MSC1150M RTH(J-C) Thermal Resistance Junction-case C/W 0.3 ELECTRICAL SPECIFICATIONS (Tcase (Tcase = 25 25 C) STATIC Symbol BVCBO BVEBO BVCER ICES HFE Test Conditions IC = 10 mA IE = 1 mA IC = 15 mA VCE = 50 V VCE = 5 V IE = 0 mA IC = 0 mA RBE = 10 IC = 1 A Min. Value Typ. Max. Unit 65 3.5 65 --15 ----------- ------12.5 120 V V V mA --- DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Unit POUT f = 1025 - 1150 MHz PIN = 25 W VCC = 50 V 150 --- --- C f = 1025 - 1150 MHz PIN = 25 W VCC = 50 V 40 --- --- W % GP Condition s f = 1025 - 1150 MHz PIN = 25 W VCC = 50 V 7.8 --- --- dB Pulse Width = 10uS Duty Cycle = 1% IMPEDANCE DATA FREQ ZIN ( ) ZCL ( ) 1025 MHz 2.2 + j5.0 4.7 - j6.2 1090 MHz 2.0 + j3.5 3.6 - j5.5 1150 MHz 2.3 + j2.7 4.8 - j5.2 VCC = 50V PIN = 25W MSCXXXX.PDF 01-19-99 MSC1150M PACKAGE MECHANICAL DATA MSCXXXX.PDF 01-19-99