© 2006 Microchip Technology Inc. DS21335D-page 1
TC1014/TC1015/TC1185
Features:
• Low Supply Current (50 µA, Typ.)
• Low Dropout Voltage
• Choice of 50 mA (TC1014), 100 mA (TC1015)
and 150 mA (TC1185) Output
• High Output Voltage Accuracy
• Standard or Custom Output Voltages
• Power-Saving Shutdown Mode
• Reference Bypass Input for Ultra Low-Noise
Operation
• Overcurrent and Overtemperature Protection
• Space-Saving 5-Pin SOT-23A Package
• Pin-Compatible Upgrades for Bipolar Regulators
• Standard Output Voltage Options:
- 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V,
3.3V, 3.6V, 4.0V, 5.0V
Applications:
• Battery-Operated Systems
• Portable Computers
• Medical Instruments
• Instrumentation
• Cellular/GSM/PHS Phones
• Linear Post-Regulator for SMPS
• Pagers
Typical Application
General Description
The TC1014/TC1015/TC1185 are high accuracy
(typically ±0.5%) CMOS upgrades for older (bipolar)
Low Dropout Regulators (LDOs) such as the LP2980.
Designed specifically for battery-operated systems, the
devices’ CMOS construction eliminates wasted ground
current, significantly extending battery life. Total supply
current is typically 50 µA at full load (20 to 60 times
lower than in bipolar regulators).
The devices’ key features include ultra low-noise oper-
ation (plus optional Bypass input), fast response to step
changes in load, and very low dropout voltage, typically
85 mV (TC1014), 180 mV (TC1015), and 270 mV
(TC1185) at full-load. Supply current is reduced to
0.5 µA (max) and VOUT falls to zero when the shutdown
input is low. The devices incorporate both overtemper-
ature and overcurrent protection.
The TC1014/TC1015/TC1185 are stable with an output
capacitor of only 1 µF and have a maximum output
current of 50 mA, 100 mA and 150 mA, respectively.
For higher output current regulators, please see the
TC1107 (DS21356), TC1108 (DS21357), TC1173
(DS21362) (IOUT = 300 mA) data sheets,.
Package Type
TC1014
TC1015
TC1185
VOUT
SHDN
GND
Bypass
470 pF
Reference
Bypass Cap
(Optional)
1µF
+
VIN VIN VOUT
15
2
4
3
Shutdown Control
(from Power Control Logic)
NOTE: 5-Pin SOT-23A is equivalent to the EIAJ (SC-74A)
Bypass
SHDN
5
5-Pin SOT-23A
TC1014
TC1015
TC1185
13
4
2
VIN
VOUT
GND
50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown
and Reference Bypass
TC1014/TC1015/TC1185
DS21335D-page 2 © 2006 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Input Voltage .........................................................6.5V
Output Voltage........................... (-0.3V) to (VIN + 0.3V)
Power Dissipation................Internally Limited (Note 7)
Maximum Voltage on Any Pin ........VIN +0.3V to -0.3V
Operating Temperature Range...... -40°C < TJ < 125°C
Storage Temperature..........................-65°C to +150°C
† Notice: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS
Electrical Specifications: VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface type
specifications apply for junction temperatures of -40°C to +125°C.
Parameter Symbol Min Typ Max Units Device Test Conditions
Input Operating Voltage VIN 2.7 —6.0 V—Note 1
Maximum Output Current IOUTMAX 50
100
150
—
—
—
—
—
—
mA TC1014
TC1015
TC1185
Output Voltage VOUT VR – 2.5% VR ±0.5% VR + 2.5% V—Note 2
VOUT Temperature Coefficient TCVOUT —
—
20
40
—
—
ppm/°C — Note 3
Line Regulation ΔVOUT/
ΔVIN
—0.050.35 %—(V
R + 1V) ≤ VIN ≤ 6V
Load Regulation ΔVOUT/
VOUT
—
—
0.5
0.5
2
3
% TC1014; TC1015
TC1185
IL = 0.1 mA to IOUTMAX
IL = 0.1 mA to IOUTMAX
(Note 4)
Dropout Voltage VIN-VOUT —
—
—
—
—
2
65
85
180
270
—
—
120
250
400
mV —
—
—
TC1015; TC1185
TC1185
IL = 100 mA
IL = 20 mA
IL = 50 mA
IL = 100 mA
IL = 150 mA (Note 5)
Supply Current (Note 8) IIN —5080 μA — SHDN = VIH, IL = 0
Shutdown Supply Current IINSD — 0.05 0.5 μA — SHDN = 0V
Power Supply Rejection
Ratio
PSRR —64—dB —F
RE ≤ 1kHz
Output Short Circuit Current IOUTSC —300450mA —V
OUT = 0V
Thermal Regulation ΔVOUT/
ΔPD
—0.04—V/W — Notes 6, 7
Thermal Shutdown Die
Temperature
TSD —160—°C —
Thermal Shutdown
Hysteresis
ΔTSD —10—°C —
Note 1: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VR + VDROPOUT.
2: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
3:
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to
initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
8: Apply for Junction Temperatures of -40°C to +85°C.
TC VOUT = (VOUTMAX – VOUTMIN)x 10
6
VOUT x ΔT
© 2006 Microchip Technology Inc. DS21335D-page 3
TC1014/TC1015/TC1185
TEMPERATURE CHARACTERISTICS
Output Noise eN —600—nV/√Hz —I
L = IOUTMAX,
F = 10 kHz
470 pF from Bypass
to GND
SHDN Input High Threshold VIH 45 — — %VIN —V
IN = 2.5V to 6.5V
SHDN Input Low Threshold VIL ——15%V
IN —V
IN = 2.5V to 6.5V
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Specifications: VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface type
specifications apply for junction temperatures of -40°C to +125°C.
Parameter Symbol Min Typ Max Units Device Test Conditions
Note 1: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VR + VDROPOUT.
2: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
3:
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to
initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
8: Apply for Junction Temperatures of -40°C to +85°C.
TC VOUT = (VOUTMAX – VOUTMIN)x 10
6
VOUT x ΔT
Electrical Specifications: VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface type
specifications apply for junction temperatures of -40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges:
Extended Temperature Range TA-40 — +125 °C
Operating Temperature Range TA-40 — +125 °C
Storage Temperature Range TA-65 — +150 °C
Thermal Package Resistances:
Thermal Resistance, 5L-SOT-23 θJA — 256 — °C/W
TC1014/TC1015/TC1185
DS21335D-page 4 © 2006 Microchip Technology Inc.
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise specified, all parts are measured at temperature = 25°C.
FIGURE 2-1: Dropout Voltage vs.
Temperature.
FIGURE 2-2: Dropout Voltage vs.
Temperature.
FIGURE 2-3: Ground Current vs. Input
Voltage (VIN).
FIGURE 2-4: Dropout Voltage vs.
Temperature.
FIGURE 2-5: Dropout Voltage vs.
Temperature.
FIGURE 2-6: Ground Current vs. Input
Voltage (VIN).
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Dropout Voltage vs. Temperature
0.000
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
-40 -20 0 20 50 70 125
TEMPERATURE (
°
C)
DROPOUT VOLTAGE (V)
C
IN
= 1µF
C
OUT
= 1µF
V
OUT
= 3.3V
I
LOAD
= 10mA
0.000
0.020
0.040
0.060
0.080
0.100
0.120
0.140
0.160
0.180
0.200
-40 -20 0 20 50 70 125
DROPOUT VOLTAGE (V)
TEMPERATURE (
°
C)
C
IN
= 1µF
C
OUT
= 1µF
Dropout Voltage vs. Temperature
V
OUT
= 3.3V
I
LOAD
= 100mA
0
10
20
30
40
50
60
70
80
90
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
GND CURRENT (
µ
A)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
C
IN
= 1µF
C
OUT
= 1µF
Ground Current vs. V
IN
V
OUT
= 3.3V
I
LOAD
= 10mA
Dropout Voltage vs. Temperature
0.000
0.010
0.020
0.030
0.040
0.050
0.060
0.070
0.080
0.090
0.100
-40 -20 0 20 50 70 125
DROPOUT VOLTAGE (V)
TEMPERATURE (
°
C)
C
IN
= 1µF
C
OUT
= 1µF
V
OUT
= 3.3V
I
LOAD
= 50mA
0.000
0.050
0.100
0.150
0.200
0.250
0.300
-40 -20 0 20 50 70 125
DROPOUT VOLTAGE (V)
TEMPERATURE (
°
C)
C
IN
= 1µF
C
OUT
= 1µF
Dropout Voltage vs. Temperature
V
OUT
= 3.3V
I
LOAD
= 150mA
0
10
20
30
40
50
60
70
80
90
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
GND CURRENT (
µ
A)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
C
IN
= 1µF
C
OUT
= 1µF
Ground Current vs. V
IN
V
OUT
= 3.3V
I
LOAD
= 100mA
© 2006 Microchip Technology Inc. DS21335D-page 5
TC1014/TC1015/TC1185
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = 25°C.
FIGURE 2-7: Ground Current vs. Input
Voltage (VIN).
FIGURE 2-8: Output Voltage (VOUT) vs.
Input Voltage (VIN).
FIGURE 2-9: Output Voltage (VOUT) vs.
Temperature.
FIGURE 2-10: Output Voltage (VOUT) vs.
Input Voltage (VIN).
FIGURE 2-11: Output Voltage (VOUT) vs.
Temperature.
0
10
20
30
40
50
60
70
80
1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
GND CURRENT (µA)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
C
IN
= 1µF
C
OUT
= 1µF
Ground Current vs. V
IN
V
OUT
= 3.3V
I
LOAD
= 150mA
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
V
IN
(V)
C
IN
= 1µF
C
OUT
= 1µF
I
LOAD
= 100mA
V
OUT
(V)
V
OUT
vs. V
IN
V
OUT
= 3.3V
I
LOAD
= 100mA
Output Voltage vs. Temperature
3.274
3.276
3.278
3.280
3.282
3.284
3.286
3.288
3.290
-40 -20 -10 0 20 40 85 125
VOUT (V)
TEMPERATURE (
°
C)
V
OUT
= 3.3V
I
LOAD
= 150mA
C
IN
= 1µF
C
OUT
= 1µF
V
IN
= 4.3V
0
0.5
1
1.5
2
2.5
3
3.5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
V
IN
(V)
C
IN
= 1µF
C
OUT
= 1µF
V
OUT
(V)
V
OUT
vs. V
IN
V
OUT
= 3.3V
I
LOAD
= 0
3.275
3.280
3.285
3.290
3.295
3.300
3.305
3.310
3.315
3.320
-40 -20 -10 0 20 40 85 125
TEMPERATURE (
°
C)
Output Voltage vs. Temperature
V
OUT
(V)
V
OUT
= 3.3V
I
LOAD
= 10mA
C
IN
= 1µF
C
OUT
= 1µF
V
IN
= 4.3V
TC1014/TC1015/TC1185
DS21335D-page 6 © 2006 Microchip Technology Inc.
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
FIGURE 2-12: Output Voltage (VOUT) vs.
Temperature.
FIGURE 2-13: IGND vs. Temperature.
FIGURE 2-14: Output Voltage (VOUT) vs.
Temperature.
FIGURE 2-15: IGND vs. Temperature.
FIGURE 2-16: AC Characteristics.
4.985
4.990
4.995
5.000
5.005
5.010
5.015
5.020
5.025
-40 -20 -10 0 20 40 85 125
Output Voltage vs. Temperature
V
OUT
(V)
TEMPERATURE (
°
C)
V
OUT
= 5V
I
LOAD
= 10mA
C
IN
= 1µF
C
OUT
= 1µF
V
IN
= 6V
0
10
20
30
40
50
60
70
-40 -20 -10 0 20 4085125
GND CURRENT (
µ
A)
TEMPERATURE (
°
C)
V
OUT
= 5V
I
LOAD
= 10mA
C
IN
= 1µF
C
OUT
= 1µF
V
IN
= 6V
I
vs. Temperature
GND
4.974
4.976
4.978
4.980
4.982
4.984
4.986
4.988
4.990
4.992
4.994
-40 -20 -10 0 20 40 85 125
Output Voltage vs. Temperature
V
OUT
(V)
TEMPERATURE (
°
C)
V
OUT
= 5V
I
LOAD
= 150mA
C
IN
= 1µF
C
OUT
= 1µF
V
IN
= 6V
0
10
20
30
40
50
60
70
80
-40 -20 -10 0 20 40 85 125
GND CURRENT (
µ
A)
TEMPERATURE (
°
C)
V
OUT
= 5V
I
LOAD
= 150mA
C
IN
= 1µF
C
OUT
= 1µF
V
IN
= 6V
I vs. Temperature
GND
10.0
1.0
0.1
0.0
0.01K 0.1K 1K 10K 100K 1000K
FREQUENCY (Hz)
Output Noise vs. Frequency
NOISE (μV/√Hz)
RLOAD = 50
Ω
COUT = 1
μ
F
CIN = 1
μ
F
CBYP = 0
1000
100
10
1
0.1
0.01
010 20 30 40 50 60 70 80 90 100
LOAD CURRENT (mA)
Stability Region vs. Load Current
COUT ESR (Ω)
COUT = 1
μ
F
to 10
μ
F
Stable Region
S
table Re
g
io
n
-30
-35
-40
-45
-50
-60
-55
-65
-70
-75
-80
0.01K 0.1K 1K 10K 100K 1000
K
FREQUENCY (Hz)
Power Supply Rejection Ratio
PSRR (dB)
IOUT = 10mA
VINDC = 4V
VINAC = 100mVp-p
VOUT = 3V
CIN = 0
COUT = 1
μ
F
© 2006 Microchip Technology Inc. DS21335D-page 7
TC1014/TC1015/TC1185
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
FIGURE 2-17: Measure Rise Time of 3.3V
with Bypass Capacitor.
FIGURE 2-18: Measure Fall Time of 3.3V
with Bypass Capacitor.
FIGURE 2-19: Measure Rise Time of 3.3V
without Bypass Capacitor.
FIGURE 2-20: Measure Fall Time of 3.3V
without Bypass Capacitor.
VSHDN
VOUT
Measure Rise Time of 3.3V LDO With Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Rise Time = 448μS
VSHDN
VOUT
Measure Fall Time of 3.3V LDO With Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 50mA
VIN = 4.3V, Temp = 25°C, Fall Time = 100μS
Measure Rise Time of 3.3V LDO Without Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Rise Time = 184μS
VSHDN
VOUT
VOUT
VSHDN
Measure Fall Time of 3.3V LDO Without Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Fall Time = 52μS
TC1014/TC1015/TC1185
DS21335D-page 8 © 2006 Microchip Technology Inc.
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
FIGURE 2-21: Measure Rise Time of 5.0V
with Bypass Capacitor.
FIGURE 2-22: Measure Fall Time of 5.0V
with Bypass Capacitor.
FIGURE 2-23: Measure Rise Time of 5.0V
without Bypass Capacitor.
FIGURE 2-24: Measure Fall Time of 5.0V
without Bypass Capacitor.
Measure Rise Time of 5.0V LDO With Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 100mA
VIN = 6V, Temp = 25°C, Rise Time = 390μS
VSHDN
VOUT
VSHDN
VOUT
Measure Fall Time of 5.0V LDO With Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 50mA
VIN = 6V, Temp = 25°C, Fall Time = 167μS
Measure Rise Time of 5.0V LDO Without Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA
VIN = 6V, Temp = 25°C, Rise Time = 192μS
VSHDN
VOUT
VOUT
VSHDN
Measure Fall Time of 5.0V LDO Without Bypass Capacitor
Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA
VIN = 6V, Temp = 25°C, Fall Time = 88μS
© 2006 Microchip Technology Inc. DS21335D-page 9
TC1014/TC1015/TC1185
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
FIGURE 2-25: Load Regulation of 3.3V
LDO.
FIGURE 2-26: Load Regulation of 3.3V
LDO.
FIGURE 2-27: Load Regulation of 3.3V
LDO.
FIGURE 2-28: Load Regulation of 3.3V
LDO.
VOUT
I
LOAD
Load Regulation of 3.3V LDO
Conditions: CIN = 1μF, COUT = 2.2μF, CBYP = 470pF,
VIN = VOUT + 0.25V, Temp = 25°C
ILOAD = 50mA switched in at 10kHz, VOUT is AC coupled
VOUT
ILOAD
Load Regulation of 3.3V LDO
Conditions: CIN = 1μF, COUT = 2.2μF, CBYP = 470pF,
VIN = VOUT + 0.25V, Temp = 25°C
ILOAD = 150mA switched in at 10kHz, VOUT is AC coupled
VOUT
ILOAD
Load Regulation of 3.3V LDO
Conditions: CIN = 1μF, COUT = 2.2μF, CBYP = 470pF,
VIN = VOUT + 0.25V, Temp = 25°C
ILOAD = 100mA switched in at 10kHz, VOUT is AC coupled
VIN
Line Regulation of 3.3V LDO
Conditions: VIN = 4V, + 1V Squarewave @2.5kHz
CIN = 0μF, COUT = 1μF, CBYP = 470pF,
ILOAD = 100mA, VIN & VOUT are AC coupled
VOUT
TC1014/TC1015/TC1185
DS21335D-page 10 © 2006 Microchip Technology Inc.
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
FIGURE 2-29: Line Regulation of 5.0V
LDO.
FIGURE 2-30: Thermal Shutdown
Response of 5.0V LDO.
CIN = 0μF, COUT = 1μF, CBYP = 470pF,
ILOAD = 100mA, VIN & VOUT are AC coupled
Line Regulation of 5.0V LDO
Conditions: VIN = 6V, + 1V Squarewave @2.5kHz
VIN
VOUT
VOUT
Thermal Shutdown Response of 5.0V LDO
Conditions: VIN = 6V, CIN = 0μF, COUT = 1μF
ILOAD was increased until temperature of die reached about 160°C, at
which time integrated thermal protection circuitry shuts the regulator
off when die temperature exceeds approximately 160°C. The regulator
remains off until die temperature drops to approximately 150°C.
© 2006 Microchip Technology Inc. DS21335D-page 11
TC1014/TC1015/TC1185
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
3.1 Input Voltage (VIN)
Connect the VIN pin to the unregulated source
voltage. Like all low dropout linear regulators, low
source impedance is necessary for the stable
operation of the LDO. The amount of capacitance
required to ensure low source impedance will
depend on the proximity of the input source
capacitors or battery type. For most applications,
1.0 µF of capacitance will ensure stable operation
of the LDO circuit. The type of capacitor used can
be ceramic, tantalum or aluminum electrolytic.
The low Effective Series Resistance (ESR) char-
acteristics of the ceramic will yield better noise
and Power Supply Ripple Rejection (PSRR)
performance at high frequency.
3.2 Ground Terminal (GND)
Connect the ground pin to the input voltage
return. For the optimal noise and PSRR
performance, the GND pin of the LDO should be
tied to a quiet circuit ground. For applications
have switching or noisy inputs tie the GND pin to
the return of the output capacitor. Ground planes
help lower inductance and voltage spikes caused
by fast transient load currents and are recom-
mended for applications that are subjected to fast
load transients.
3.3 Shutdown (SHDN)
The Shutdown input is used to turn the LDO on
and off. When the SHDN pin is at a logic high
level, the LDO output is enabled. When the
SHDN pin is pulled to a logic low, the LDO output
is disabled. When disabled, the quiescent current
used by the LDO is less than 0.5 µA max.
3.4 Bypass
Connecting a low-value ceramic capacitor to the
Bypass pin will further reduce output voltage
noise and improve the PSRR performance of the
LDO. While smaller and larger values can be
used, these affect the speed at which the LDO
output voltage rises when the input power is
applied. The larger the bypass capacitor, the
slower the output voltage will rise.
3.5 Output Voltage (VOUT)
Connect the output load to VOUT of the LDO. Also
connect one side of the LDO output capacitor as
close as possible to the VOUT pin.
Pin No.
(5-Pin SOT-23A) Symbol Description
1V
IN Unregulated supply input.
2 GND Ground terminal.
3 SHDN Shutdown control input. The regulator is fully enabled when a logic high is applied to
this input. The regulator enters shutdown when a logic low is applied to this input.
During shutdown, output voltage falls to zero and supply current is reduced to
0.5 µA (max).
4 Bypass Reference bypass input. Connecting a 470 pF to this input further reduces output
noise.
5V
OUT Regulated voltage output.
TC1014/TC1015/TC1185
DS21335D-page 12 © 2006 Microchip Technology Inc.
4.0 DETAILED DESCRIPTION
The TC1014, TC1015 and TC1185 are precision fixed
output voltage regulators (if an adjustable version is
needed, see the TC1070, TC1071 and TC1187 data
sheet (DS21353). Unlike bipolar regulators, the
TC1014, TC1015 and TC1185 supply current does not
increase with load current. In addition, the LDOs’ out-
put voltage is stable using 1 µF of capacitance over the
entire specified input voltage range and output current
range.
Figure 4-1 shows a typical application circuit. The
regulator is enabled anytime the shutdown input
(SHDN) is at or above VIH, and disabled when SHDN is
at or below VIL. SHDN may be controlled by a CMOS
logic gate or I/O port of a microcontroller. If the SHDN
input is not required, it should be connected directly to
the input supply. While in shutdown, the supply current
decreases to 0.05 µA (typical) and VOUT falls to zero
volts.
FIGURE 4-1: Typical Application Circuit.
4.1 Bypass Input
A 470 pF capacitor connected from the Bypass input to
ground reduces noise present on the internal
reference, which in turn, significantly reduces output
noise. If output noise is not a concern, this input may be
left unconnected. Larger capacitor values may be
used, but results in a longer time period to rated output
voltage when power is initially applied.
4.2 Output Capacitor
A 1 µF (min) capacitor from VOUT to ground is required.
The output capacitor should have an effective series
resistance greater than 0.1Ω and less than 5Ω. A 1 µF
capacitor should be connected from VIN to GND if there
is more than 10 inches of wire between the regulator
and the AC filter capacitor, or if a battery is used as the
power source. Aluminum electrolytic or tantalum
capacitor types can be used. (Since many aluminum
electrolytic capacitors freeze at approximately -30°C,
solid tantalums are recommended for applications
operating below -25°C.) When operating from sources
other than batteries, supply-noise rejection and
transient response can be improved by increasing the
value of the input and output capacitors and employing
passive filtering techniques.
4.3 Input Capacitor
A 1 µF capacitor should be connected from VIN to GND
if there is more than 10 inches of wire between the
regulator and this AC filter capacitor, or if a battery is
used as the power source. Aluminum electrolytic or
tantalum capacitors can be used (since many alumi-
num electrolytic capacitors freeze at approximately -
30°C, solid tantalum is recommended for applications
operating below -25°C). When operating from sources
other than batteries, supply-noise rejection and tran-
sient response can be improved by increasing the
value of the input and output capacitors and employing
passive filtering techniques.
TC1014
TC1015
TC1185
VOUT
SHDN
GND
Bypass
470 pF
Reference
Bypass Cap
(Optional)
+
VIN VOUT
Shutdown Control
(to CMOS Logic or Tie
to VIN if unused)
1µF
+
Battery
+1µF
© 2006 Microchip Technology Inc. DS21335D-page 13
TC1014/TC1015/TC1185
5.0 THERMAL CONSIDERATIONS
5.1 Thermal Shutdown
Integrated thermal protection circuitry shuts the
regulator off when die temperature exceeds 160°C.
The regulator remains off until the die temperature
drops to approximately 150°C.
5.2 Power Dissipation
The amount of power the regulator dissipates is
primarily a function of input and output voltage, and
output current. The following equation is used to
calculate worst-case actual power dissipation:
EQUATION 5-1:
The maximum allowable power dissipation
(Equation 5-2) is a function of the maximum ambient
temperature (TA
MAX
), the maximum allowable die
temperature (TJMAX) and the thermal resistance from
junction-to-air (θJA). The 5-pin SOT-23A package has a
θJA of approximately 220°C/Watt.
EQUATION 5-2:
Equation 5-1 can be used in conjunction with
Equation 5-2 to ensure regulator thermal operation is
within limits. For example:
Given:
Find:
1. Actual power dissipation
2. Maximum allowable dissipation
Actual power dissipation:
PD ≈ (VINMAX – VOUTMIN)ILOADMAX
= [(3.0 x 1.1) – (2.7 x .975)]40 x 10–3
= 26.7 mW
Maximum allowable power dissipation:
In this example, the TC1014 dissipates a maximum of
26.7 mW below the allowable limit of 318 mW. In a
similar manner, Equation 5-1 and Equation 5-2 can be
used to calculate maximum current and/or input
voltage limits.
5.3 Layout Considerations
The primary path of heat conduction out of the package
is via the package leads. Therefore, layouts having a
ground plane, wide traces at the pads, and wide power
supply bus lines combine to lower θJA and therefore
increase the maximum allowable power dissipation
limit.
PDVINMAX VOUTMIN
–()ILOADMAX
≈
Where:
PD= Worst-case actual power
dissipation
VINMAX = Maximum voltage on VIN
VOUTMIN = Minimum regulator output voltage
ILOADMAX = Maximum output (load) current
Where all terms are previously defined.
PDMAX
TJMAX TAMAX
–()
θJA
--------------------------------------------=
VINMAX =3.0V +10%
VOUTMIN = 2.7V – 2.5%
I
LOADMAX =40mA
TJMAX =125°C
TAMAX =55°C
PDMAX
TJMAX TAMAX
–()
θJA
--------------------------------------------=
125 55–()
220
-------------------------=
318 mW=
TC1014/TC1015/TC1185
DS21335D-page 14 © 2006 Microchip Technology Inc.
6.0 PACKAGING INFORMATION
6.1 Package Marking Information
6.2 Taping Form
c&drepresents part number code + temperature
range and voltage
erepresents year and 2-month period code
frepresents lot ID number
1423
TABLE 6-1: PART NUMBER CODE AND
TEMPERATURE RANGE
(V) TC1014
Code
TC1015
Code
TC1185
Code
1.8 AY BY NY
2.5 A1 B1 N1
2.6 NB BT NT
2.7 A2 B2 N2
2.8 AZ BZ NZ
2.85 A8 B8 N8
3.0 A3 B3 N3
3.3 A5 B5 N5
3.6 A9 B9 N9
4.0 A0 B0 N0
5.0 A7 B7 N7
Carrier Tape, Number of Components Per Reel and Reel Size:
Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size
5-Pin SOT-23A 8 mm 4 mm 3000 7 in.
Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices
Device
Marking
PIN 1
User Direction of Feed
Standard Reel Component Orientation
for 713 Suffix Device
(Mark Right Side Up)
W
P
© 2006 Microchip Technology Inc. DS21335D-page 15
TC1014/TC1015/TC1185
5-Lead Plastic Small Outline Transistor (OT) (SOT-23)
1
p
D
B
n
E
E1
L
c
β
φ
α
A2
A
A1
p1
10501050
b
Mold Draft Angle Bottom
10501050
a
Mold Draft Angle Top
0.500.430.35.020.017.014BLead Width
0.200.150.09.008.006.004
c
Lead Thickness
10501050
f
Foot Angle
0.550.450.35.022.018.014LFoot Length
3.102.952.80.122.116.110DOverall Length
1.751.631.50.069.064.059E1Molded Package Width
3.002.802.60.118.110.102EOverall Width
0.150.080.00.006.003.000A1Standoff
1.301.100.90.051.043.035A2Molded Package Thickness
1.451.180.90.057.046.035AOverall Height
1.90.075
p1
Outside lead pitch (basic)
0.95.038
p
Pitch
55
n
Number of Pins
MAXNOMMINMAXNOMMINDimension Limits
MILLIMETERSINCHES
*
Units
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" (0.127mm) per side.
Notes:
EIAJ Equivalent: SC-74A
Drawing No. C04-091
*
Controlling Parameter
Revised 09-12-05
TC1014/TC1015/TC1185
DS21335D-page 16 © 2006 Microchip Technology Inc.
NOTES:
© 2006 Microchip Technology Inc. DS21335D-page 17
TC1014/TC1015/TC1185
APPENDIX A: REVISION HISTORY
Revision D (April 2006)
• Removed “ERROR is open circuited” from SHDN
pin description in Pin Function Table.
• Added verbiage for pinout descriptions in Pin
Function Table.
• Replaced verbiage in first paragraph of Section
4.0 Detailed Description.
• Added Section 4.3 Input Capacitor
Revision C (January 2006)
• Changed TR suffix to 713 suffix in Taping Form in
Package Marking Section
Revision B (May 2002)
• Converted Telcom data sheet to Microchip
standard for Analog Handbook
Revision A (February 2001)
• Original Release of this Document under Telcom.
TC1014/TC1015/TC1185
DS21335D-page 18 © 2006 Microchip Technology Inc.
NOTES:
© 2006 Microchip Technology Inc. DS21335D-page 19
TC1014/TC1015/TC1185
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Device: TC1014: 50 mA LDO with Shutdown and VREF Bypass
TC1015: 100 mA LDO with Shutdown and VREF Bypass
TC1185: 150 mA LDO with Shutdown and VREF Bypass
Output Voltage: XX = 1.8V
XX = 2.5V
XX = 2.6V
XX = 2.7V
XX = 2.8V
XX = 2.85V
XX = 3.0V
XX = 3.3V
XX = 3.6V
XX = 4.0V
XX = 5.0V
Temperature Range: V = -40°C to +125°C
Package: CT713 = Plastic Small Outline Transistor (SOT-23),
5-lead, Tape and Reel
PART NO. -XX X
TemperatureOutput
Voltage
Device
Examples:
a) TC1014-1.8VCT713: 5LD SOT-23-A, 1.8V,
Tape and Reel.
b) TC1014-2.85VCT713:5LD SOT-23-A, 2.85V,
Tape and Reel.
c) TC1014-3.3VCT713: 5LD SOT-23-A, 3.3V,
Tape and Reel.
a) TC1015-1.8VCT713: 5LD SOT-23-A, 1.8V,
Tape and Reel.
b) TC1015-2.85VCT713:5LD SOT-23-A, 2.85V,
Tape and Reel.
c) TC1015-3.0VCT713: 5LD SOT-23-A, 3.0V,
Tape and Reel.
a) TC1185-1.8VCT713: 5LD SOT-23-A, 1.8V,
Tape and Reel.
b) TC1185-2.8VCT713: 5LD SOT-23-A, 2.8V,
Tape and Reel.
Range
XXXX
Package
TC1014/TC1015/TC1185
DS21335D-page 20 © 2006 Microchip Technology Inc.
NOTES:
© 2006 Microchip Technology Inc. DS21335D-page 21
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Printed on recycled paper.
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
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Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
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DS21335D-page 22 © 2006 Microchip Technology Inc.
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