TN 2365 1N 2366 1N 2367 1N 2368 1N 2369 1N 2370 1N 2371 1N 2362A....2371A 11N23628...2371B 1N 2386 1N 2387 1 N.2389 1. N2390(A) 4.N2391(A) 1N 2392(A} 1.N2393(A) 1.N2394(A} 1 N2395(A) 1.N2396(A} 1.N2397(A) 1N2398(4} 1.N2399(A) 1 N 2400(A) 1 N2401(4 1.N2402 1N2414(A 1.N2415(A) 1.N2416(A) 1N2417(A) 1.N2418(A) 1.N2419(4} 1 N 2420(A} USA USA USA USA USA USA. Gen, Mot,++ Gen, Mot4+ Gen,Mot,++ Gen,Mot,++ a Sem,Ssi USA USA USA USA Si-Di =1N2362: 1500V, Iso 32a DO-10 - Si-Di =1N2362: 1600V 32a pOo-4 - Si-Di =1N2362: 1600V, Iso 32a DO-10 Si-Di =1N2362: 1800V 32a Do-4 - Si-Di =1N2362: 1800V, Iso 32a 00-10 - Si-Di =1N2362: 2000V 32a DO-4 - Si-Di =1N2362: 2000V, Iso 32a DO-10 - Si-Di =1N2362...2371: 5A 32a DO-4/-10 __ SieDi_ = 1N2362...2371: 10A _ 32a DO-4/-10 _ : oe SDP Rr, 1000, 0,2A(To= 450), Ui<2V(0 J1<2V(0,3) ___ 82a DO-4 | ee : Si-Di Rr, 600V, 0,25A, Li<3(100mA) 31a (13x9mm@) BY 126...127, BY 133...134, 1N4005...07, ++ Si-Di Rr, 1000V, 0,254, Uf<3V(100MA) 31a BY 127, BY 133, GP 100, 1N4007...07, +4 Si-Di Rr, 1500Y, 0,2A, Uf<4,5V(100mA) Sta BY 2931/1500, BY 269, DM 513, GP 10W Si-DI Rr, 2000V, 0,2A, Uf<7,5V(100mA) 31a (23x9mm@) HVG 2, GP 02-20, MR 250-2, 1N1732(A) Si-Di Rr, 2400V, 0,15A, Uf<9V(75mA) Sta (23x9mmB) HVG 3, GP 02-30, MR 250-3, 1N1733(A) Si-Di Rr, 3000V, 0,158, Uf<9(75mA) Sia (26x9mm) HVG 3, GP 02-30, MR 250-3, 1N1733(A) Si-Di Rr, 4000V, 0,15A, Uf<15V{50mA) 3ta (35x9mm@) HVG 4, GP 02-40, MR 250-4, 1N1734(A) Si-Di Rr, 6000V, 0,1A, Uf<22,5V(50mA) Sta (54x9mm@) BYX 90, 1N5183 S-Di Rr, 10KV, 0,075A, Uf<37,5V(30mA) ta (S4xmme) _ 1N3052 _ Si-Di KV-Rr, 4kV, 0,15, Uf<18V(100mA) 31a (38x12mm@) HVG 4, GP 02-40, MR 250-4, 1N1734(A) Si-Di =1N2382: 0,35A, Uf<6V(400mA) 3ta (12x10mmg) 1N1734A Si-Di KV-Rr, GRY, O,1A, Uf<27V(100mA) sta (38x12mmg) BYX 90, 1N5183 Si-Di =1N2383: 0,35A, Uf<9V(400mA) 31a (12x10mm) - Si-Di kV-Rr, 8kV, 0,07A, Uf<27V(100mA) 31a (38x12mm@) 1N5184 Si-Di =1N2384: 0,275A, Uf<12V(400mA} sta (12x10mm) - Si-Di KV-Rr, 10kV, 0,07A, Uf<39V(100mA) Sta {51x12mmg) 1N5184 _Si-Di = 1N2384: 0,24, Uf<15V(400MA) _ 31a (12x10mm@) a co _ _ _ GeDi UH SV . . _Koax . a _ 2-Di_ 30V, 10%, Wo _ 3a DOH. oe BZW22/C10, BZX61/C10, ZPY10, 1N5925,+4+ _ Si-Di Dual, Rr, 1600V, 0,64, VURSV(OBA) __ oo _ i a _. . . . __ Si-Di Rr, SOV, 1,5A(Tas55}, Uf<t2V(1,5A) BY 226...227, BY 251...255, 1N5391...99, ++ Si-Di =1N2390: 100V BY 226...227, BY 251...255, 1N5392...99, ++ Si-Di =1N2390: 200V BY 226...227, BY 251...255, 1N5393...99, ++ Si-Di =1N2390: 300V BY 226...227, BY 252...255, 1N5394...99, ++ S-Di =1N2390: 400V BY 226...227, BY 252.,.255, 1N5395...99, ++ Si-Di =1N2390: 500V BY 226...227, BY 253, ..255, 1N5396...99, ++ Si-Di =1N2390: 600V BY 226...227, BY 253...255, 1N5397,..99, ++ Si-Di =1N2390: 700V BY 227, BY 254...255, 1N5398...99, ++ Si-Di =1N2390: 800V BY 227, BY 254,..255, 1N5398...99, ++ Si-Di =1N2390 >1N2390 Si-Di =1N2391 >1N2391 Si-Di =1N2392 >1N2392 Si-Di =1N2393 ~>1N2393 Si-Di =1N2394 1N2304 Si-Di =1N2395 1N2395 Si-Di =1N2396 > 1N2396 Si-Di =1N2397 >1N2397 Si-Di =1N2398 >1N2398 Si-Di =1N2390 >1N2390 Si-Di =1N2391 ~>1N2391 Si-Di =1N2392 +1N2392 Si-Di =1N2393 >(N2393 Si-Di =1N2394 +1N2394 Si-Di =1N2395 -1N2395 Si-Di =1N2396 ~>1N2398 Si-Di =1N2397 >1N2397 Si-Di =1N2398 -+1N2398 Si-Di =1N2390 1N2390 Si-Di =1N2391 >1N2391 Si-Di =1N2392 1N2392 Si-Di =1N2393 >1N2393 Si-Di =1N2394 ~1N2394 Si-Di =1N2395 ~>1N2395 Si-Di =1N2396 ~1N2396 Si-Di =1N2397 >1N2397 Si-Di =1N2398 __ _ _ _ __ >1N2398 . Si-Di P Rr, SOV, 100A(Tc=75), Uf<1,1V(50A) 73a 00-8 1N3288...97 Si-Di =1N2326: 100V 73a DO-8 1N3288...97 Si-Di =1N2326: 150V 73a DO-8 1N3289...97 Si-Di =1N2326: 200V 73a 00-8 1N3289...97 Si-Di =1N2326: 250V 73a DO-8 1N3290...97 Si-Di =1N2326: 300V 73a DO-8 1N3290...97 Si-Di =1N2326: 350V Ba 00-8 1N3291...97 Si-Di =1N2326: 400V 73a DO-8 1N3291...97 Si-Di =1N2326: SOOV 7a DO-8 1N3292...97 _Si-Di_ = 1N2326:600V0 73a 00-8 1N3293...97 Si-Di P Rr, 50V, 150A(Te=75), Uf<t,1V(70A) 73a DO-8 : 1N4587...96 Si-Di =1N2436: 100V 73a DO-8 1N4587...96 Si-Di =1N2436: 150V 73a DO-8 1N4588...96 Si-Di =1N2436: 200V 73a DO-8 1N4588...96 Si-Di =1N2436: 250V 73a 00-8 1N4589...96 Si-Di =1N2436: 300V 73a DO-8 1N4589...96 Si-Di =1N2436: 350V 73a DO-8 1N4590...96 Si-Di =1N2436: 400V 73a 00-8 1N4590...96 Si-Di =1N2436: 500V 73a DO-8 1N4591...96 __ S-Di = 1N2436: 600V 7a DO-8 a 1N4592...96 . oe Si-Di P Rr, 50V, 45A(Tc=60), Ued,1V(20A) 32a DO-5 - Si-Di =1N2446: 100V 32a DO-5 - Si-Di =1N2446: 150V 32a DO-5 - Si-Di =1N2446: 200V 32a DO-5 - Si-Di =1N2446: 250V 32a DO-5 - Si-Di =1N2446: 300V 32a D0-5 - Si-Di =1N2446: 350V 32a 00-5 -