NPO Dielectric General Specifications IW) A NPO is the most popular formulation of the tempera- ture-compensating, EIA Class | ceramic materials. Modern NPO formulations contain neodymium, samari- um and other rare earth oxides. NPO ceramics offer one of the most stable capacitor dielectrics available. Capacitance change with tempera- ture is 0 +30pprm/C which is less than +0.3% AC from -56C to +4125C. Capacitance drift or hysteresis for NPO ceramics is negligible at less than +0.05% versus up to +2% for films. Typical capacitance change with life is less than +0.1% for NPQs, one-fifth that shown by most other dielectrics. NPO formulations show no aging characteristics. The NPO formulation usually has a Q in excess of 1000 and shows little capacitance or Q changes with frequency. Their dielectric absorption is typically less than 0.6% which is similar to mica and most films. Part Number (See page 3 for complete information and options) 0805 T T Size Voltage Dielectric (L" x W") 25V = 3 NPO=A 50V =5 100V = 1 200V =2 101 K T +t T T FF Capacitance Capacitance Failure Terminations Packaging Special ode Tolerance Rate T = Plated Ni 2=7" Reel Code Preferred and Solder Paper/Unmarked A= Std. K=+10% Product J=+5% Performance Characteristics: NPO Capacitance Range 0.5 pF to .033 pF (1.0 +0.2 Vrms, 1kHz, for <100 pF use 1 MHz) Capacitance Tolerances Preferred +5%, +10% others available: +.25 pF, +.5 pF, +1% (225pF), +2%(213pF), +20% For values < 10 pF preferred tolerance is +.5 pF, also available +.25 pF. Operating Temperature Range -55C to +125C Temperature Characteristic 0 + 30 ppm/C Voltage Ratings 25, 50, 100 & 200 VDC (+125C) Dissipation Factor and Q For values >30 pF: 0.1% max. (+25C and +125C) For values <30 pF: Q = 400 + 20XC (C in pF) Insulation Resistance (+25C, RVDC) 100,000 megohms min. or 1000 MQ - pF min., whichever is less insulation Resistance (+125C, RVDC) 10,000 megohms min. or 100 MQ - pF min., whichever is less Dielectric Strength 250% of rated voltage for 5 seconds at 50 mamp max. current Test Voltage 1+0.2 Vrms Test Frequency For values <100 pF: 1 MHz For values >100 pF: 1 KHz NPO Dielectric Typical Characteristic Curves INVA) Temperature Coefficient o Typical Capacitance Change Envelope: 0 + 30 ppnv/C i % A Capacitance 85 -35 -15 +5 +25 +45 +65 +854+105 +125 Temperature C A Capacitance vs. Frequency +2 +4 % A Capacitance 1KHz 10KHzs 100 KHz) 1 MHz 10 Mz Frequency Insulation Resistance vs Temperature 10,000. saetipunssiticsaamescanmanasiepusestibsemeas , 100 Insulation Resistance (Ohm-Farads) +20 +25 +40 460 +80 +100 Temperature C Variation of Impedance with Cap Value Impedance vs. Frequency 0805 - NPO 10 pF vs. 100 pF vs. 1000 pF 100,000 ro 10,000 1,000 100 Impedance, ) 10.0 1.0 0.1 10 400 1000 Frequency, MHz Variation of Impedance with Chip Size Impedance vs. Frequency 1000 pF - NPO Impedance, 2 Oo O18 Ee Li i) 10 100 71000 Frequency, MHz Variation of Impedance with Ceramic Formulation Impedance vs. Frequency 1000 pF - NPO vs X7R 0805 10.00 S 1.00 oh Oo c oS oO o E 0.10 0.0 10 100 4000 Frequency, MHz NPO Dielectric IW /) Capacitance Range Preferred Sizes are Shaded o a fm SIZE ' 0402" 0504" 0603" 0805 4005 0907 4206 1505 (U) Length MM 1.00 + 10 1.27 + 25 1602.15 2.0% 20 2.41425 2.29 + 25 3.20 + 20 3.81 + 28 a fin) | (040 + 604) (.080 + .010) (063 + .008) {.079 008) (095 + .010) (.090 + .010) (.126 + 068) (.150 + 010) (Wy Width MM 50 2.10 1.02 + .25 B12 16 1.25 + 20 4.27 + 25 1.78 + 25 1,60 + 26 1.27% 25 (in) {020 + 004) (040 + .010) (032.4 .006) (:049 + .008) (050 + .010) (.070 + .010} {.063 + .008} (.050 + .010) F MM -86 4.02 50 1,36 1.27 1.52 1.58 1.27 (7) Max. Thickness (in) (02 (.040) (035) (051) (050) (060) (059) (050) MM 262415 38 +13 35 2.15 50 + 25 50 + .25 50 + 25 50+ 25 50 + .25 {in.} {.010 + .006} : (015 + .005) (014 + 006) {020 + 010} {020 + .010) (020 + .010) (020 + 610) (020 + .010) WVDG 25 50 59 | 100 | 200 25 | 50 100 | 25 | 50 |100]200 | 50 100 | 200 50 400 25 | 50 | 100 | 200 50 | 100 | 200 Cap 05 (pF) 1.0 1.2 15 1.8 2.2 a7 3.3 39 47 5.6 6.8 82 10 12 15 18 22 27 33 39 a7 56 68 82 100 420 150 180 220 i 270 a 330 390 : a ; i 470 Bs as : 560 5 680 : i 820 ea 4000 pay ee 1200 : 1500 1800 i 2200 ae pe 2700 mo 3300 om 3900 4700 (}) Terminat aw ~ / fal ao za *IR and vapor Phase soldering only recommended. NOTES: For higher voltage chips, see pages 20 and 21. NPO Dielectric A\/)K\ Capacitance Range Preferred Sizes are Shaded ioe Ol L-] im | | SIZE 1805* 1210 1808* 1812* 1825* 2225* (Q) Length MM 457 +25 3.20 + 20 4.57 + .25 4.50 + 30 450 + 30 5.72 + 25 {in} (.180 + 010) (126 + .008) (.180 + .010) (177 x 042) (177 + 012) {.225 + C10) (WM) Width MM 4.27% .25 2.50 + 20 2.03 + 25 3.20 + .20 6.40 2 .40 6.35 + .25 fin.) (050 + .010) (088 + .008) (080 + .010) (126 + .008) (.252 + .016) (250 + .010) 5 MM 127 1.70 1.52 1.70 1.70 4.70 (}) Max. Thickness fin) (050) (067) (.060) (067) (087) (067) ( Terminal MM -64 + .39 50 + 25 64+ 39 61 + 36 614.36 64+ 39 (in) (025 + .015) {020 + .010) (025 + .015} (024 + 014} (024 + .014) {.025 + 015) WVDC 50 100 200 25 50 100 | 200 50 400 200 25 50 100 | 200 50 100 200 50 100 200 Cap 560 ; a + ew, (pF) 680 | Vj P 390 U LW 1000 T 1200 1500 1800 : . 2200 E 2700 J : 3300 3900 4700 5600 6800 8200 Cap. O10 (uF) O12 O15 018 022 027 033 039 *IR and vapor Phase soldering only recommended. NOTES: For higher voltage chips, see pages 20 and 21.