CS22-12IO1M - LITTELFUSE - Datasheet.Directory

CS22-12io1M

2 1

3

Single Thyristor

High Efficiency Thyristor

Part number

CS22-12io1M

Backside: isolated

TAV

T

V V1.27

RRM

16

1200

=

V=V

I=A

Features / Advantages: Applications: Package:

● Thyristor for line frequency

● Planar passivated chip

● Long-term stability

● Line rectifying 50/60 Hz

● Softstart AC motor control

● DC Motor control

● Power converter

● AC power control

● Lighting and temperature control

TO-220FP

● Industry standard outline

● RoHS compliant

● Epoxy meets UL 94V-0

● Soldering pins for PCB mounting

● Base plate: Plastic overmolded tab

● Reduced weight

● Isolation Voltage: V~

2500

Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

and may not be used in, all applications. Read complete Disclaimer Notice at

Disclaimer Notice

www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, conditions and dimensions. 20191129dData according to IEC 60747and per semiconductor unless otherwise specified

CS22-12io1M

V = V

A²s

Symbol

Definition

Ratings

typ.

max.

I

V

IA

V

T

1.30

R2.5 K/W

min.

16

VV

10T = 25°C

VJ

T = °C

VJ

mA2V = V

T = 25°C

VJ

I = A

T

V

T = °C

C

90

P

tot

50 WT = 25°C

C

30

1200

forward voltage drop

total power dissipation

Conditions

Unit

1.59

T = 25°C

VJ

125

V

T0

V0.86T = °C

VJ

150

r

T

13.2 mΩ

V1.27T = °C

VJ

I = A

T

V

30

1.65

I = A60

threshold voltage

slope resistance for power loss calculation only

µA

125

VV1200T = 25°C

VJ

IA25

P

GM

Wt = 30 µs 10

max. gate power dissipation

P

T = °C

C

150

Wt = 5

P

GAV

W0.5

average gate power dissipation

C

J

13

junction capacitance

V = V400 T = 25°Cf = 1 MHz

RVJ

pF

I

TSM

t = 10 ms; (50 Hz), sine T = 45°C

VJ

max. forward surge current

T = °C

VJ

150

I²t T = 45°C

value for fusing

T = °C150

V = 0 V

R

V = 0 V

R

V = 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

thJC

thermal resistance junction to case

T = °C

VJ

150

300

325

315

A

255

275

450

440

1200

300 µs

RMS forward current

T(RMS)

TAV

180° sine

average forward current

(di/dt)

cr

A/µs

150repetitive, I =T

VJ

= 125 °C; f = 50 Hz

critical rate of rise of current

V

GT

gate trigger voltage

V = 6 V T = °C25

(dv/dt) T = 125°C

critical rate of rise of voltage

A/µs500

V/µs

t = µs;

I A; V = ⅔ V

R = ∞; method 1 (linear voltage rise)

VJ

DVJ

90 A

T

P

G

= 0.3

di /dt A/µs;

G

=0.3

DRM

cr

V = ⅔ V

DRM

GK

500

1.3 V

T = °C-40

VJ

I

GT

gate trigger current

V = 6 V T = °C25

DVJ

30 mA

T = °C-40

VJ

1.6 V

50 mA

V

GD

gate non-trigger voltage

T = °C

VJ

0.2 V

I

GD

gate non-trigger current

1 mA

V = ⅔ V

D DRM

150

latching current

T = °C

VJ

90 mA

I

L

25t µs

p

= 10

I A;

G

= 0.3 di /dt A/µs

G

= 0.3

holding current

T = °C

VJ

60 mA

I

H

25V = 6 V

D

R = ∞

GK

gate controlled delay time

T = °C

VJ

2 µs

t

gd

25

I A;

G

= 0.3 di /dt A/µs

G

= 0.3

V = ½ V

D DRM

turn-off time

T = °C

VJ

150 µs

t

q

di/dt = A/µs10 dv/dt = V/µs20

V =

R

100 V; I A;

T

= 30 V = ⅔ V

DRM

tµs

p

= 200

non-repet., I = 30 A

T

125

R

thCH

thermal resistance case to heatsink

K/W

Thyristor

1300

RRM/DRM

RSM/DSM

max. non-repetitive reverse/forward blocking voltage

max. repetitive reverse/forward blocking voltage

R/D

reverse current, drain current

T

R/D

200

0.5

IXYS reserves the right to change limits, conditions and dimensions. 20191129dData according to IEC 60747and per semiconductor unless otherwise specified

CS22-12io1M

Ratings

Logo

Part Number

DateCode

Lot#

Product Marking

Location

123456

yywwZ

XXXXXX

CLA16E1200PN TO-220ABFP (3) 800

Package

T

op

°C

M

D

Nm0.6

mounting torque

0.4

T

VJ

°C150

virtual junction temperature

-55

Weight g2

Symbol

Definition

typ.

max.

min.

Conditions

operation temperature

Unit

F

C

N60

mounting force with clip

20

VV

t = 1 second

V

t = 1 minute

isolation voltage

mm

1.6 1.0

2.5 2.5

d

Spp/App

creepage distance on surface | striking distance through air

d

Spb/Apb

terminal to backside

I

RMS

RMS current

35 A

per terminal

125-55

terminal to terminal

CMA30E1600PN

CLA30E1200PB

TO-220ABFP (3)

TO-220AB (3)

1600

1200

CLA30E1200PC

CLA30E1200HB

CMA30E1600PB

CMA30E1600PZ

TO-263AB (D2Pak) (2)

TO-247AD (3)

TO-220AB (3)

TO-263AB (D2Pak) (2HV)

1200

1600

TO-220FP

Similar Part Package Voltage class

CS22-08io1M TO-220ABFP (3) 800

Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering

50/60 Hz, RMS; I ≤ 1 mA

ISOL

CS22-12io1M 500226Tube 50CS22-12io1MStandard

2500

ISOL

T

stg

°C150

storage temperature

-55

2100

threshold voltage

V0.86

mΩ

V

0 max

R

0 max

slope resistance *

10.1

Equivalent Circuits for Simulation

T =

VJ

I

V

0

R

0

Thyristor

°C

* on die level

150

IXYS reserves the right to change limits, conditions and dimensions. 20191129dData according to IEC 60747and per semiconductor unless otherwise specified

CS22-12io1M

Ø P A

A1

H

A2

Q

L1

D

E

L

b

b1 c

e

1 2 3

min max min max

A4.50 4.90 0.177 0.193

A1 2.34 2.74 0.092 0.108

A2 2.56 2.96 0.101 0.117

b0.70 0.90 0.028 0.035

c0.45 0.60 0.018 0.024

D15.67 16.07 0.617 0.633

E9.96 10.36 0.392 0.408

e

H6.48 6.88 0.255 0.271

L12.68 13.28 0.499 0.523

L1 3.03 3.43 0.119 0.135

Ø P 3.08 3.28 0.121 0.129

Q3.20 3.40 0.126 0.134

Dim.

Millimeters Inches

2

.

54

BSC

0

.

100

BSC

2 1

3

Outlines TO-220FP

IXYS reserves the right to change limits, conditions and dimensions. 20191129dData according to IEC 60747and per semiconductor unless otherwise specified

CS22-12io1M

0 25 50 75 100 125 150 175

0

5

10

15

20

25

30

0 25 50 75

0

1

2

3

4

10

-2

10

-1

10

0

10

1

10

-1

10

0

10

1

10

2

0,001 0,01 0,1 1

80

120

160

200

240

2

8

0

0,5 1,0 1,5 2,0

0

10

20

30

40

50

60

0,001 0,01 0,1 1 10 100

0

1

2

3

I

T

[A]

t [s]

V

T

[V]

2 3 4 5 6 7 8 9 011

100

1

0

00

I

2

t

[A

2

s]

t [ms]

I

TSM

[A]

T

VJ

= 25°C

T

VJ

= 125°C

T

VJ

= 45°C

50 Hz, 80% V

RRM

T

VJ

= 125°C

T

VJ

= 45°C

V

R

= 0 V

V

G

[V]

I

G

[mA]

I

T(AV)M

[A]

T

case

[°C]

Z

thJC

[K/W]

t [s]

Fig. 1 Forward characteristics Fig. 2 Surge overload current

I

TSM

: crest value, t: duration

Fig. 3 I

2

t versus time (1-10 s)

Fig. 4 Gate voltage & gate current

Triggering: A = no; B = possible; C = safe

Fig. 6 Max. forward current at

case temperature

Fig. 8 Transient thermal impedance junction to case

T

VJ

= 150°C

125°C

I

GD

: T

VJ

= 125°C

I

GD

: T

VJ

= 25°C

A

B

C

t

gd

[µs]

I

G

[A]

lim.

typ.

Fig. 5 Gate controlled delay time t

gd

0 5 10 15 20

0

4

8

12

16

20

24

I

T(AV)

[A]

P

(AV)

[W]

Fig. 7a Power dissipation versus direct output current

Fig. 7b and ambient temperature

0 50 100 150

T

amb

[°C]

T

VJ

= 125°C

I

GT

: T

VJ

= 25°C

I

GT

: T

VJ

= 0°C

I

GT

: T

VJ

= -40°C

dc =

1

0.5

0.4

0.33

0.17

0.08

R

thHA

0.6

0.8

1.0

2.0

4.0

8.0

180° sine

i R

thi

(K/W) t

i

(s)

1 0.015 0.0011

2 0.124 0.0019

3 0.395 0.07

4 1.606 1.1

5 0.86 4.9

Thyristor

IXYS reserves the right to change limits, conditions and dimensions. 20191129dData according to IEC 60747and per semiconductor unless otherwise specified

CS22-12io1M

IXYS reserves the right to change limits, conditions and dimensions. 20191129dData according to IEC 60747and per semiconductor unless otherwise specified