A BB SEMICONDUCTORS AG CSR Reverse 38E D MM 0016838 000003 & EAABB Soe ee ee ee ae pe CSR Riickwartsleitende . CSR thyristors a Conducting Thyristors Thyristoren conduction inverse Reverse Conducting Thyristors Riickwartsleitende Thyristoren Thyristors 4 conduction inverse - Monolithic integration of fast - Thyristor und Diode auf einer = Intgration monolithique d'un thyristor and fast diode Siliziumtablette thyristor rapide et d'une diode rapide = Small size and less weight = Platz- und Gewlchtsersparnis - Economie de place et de poids High reliability Hhere Betriebssicherheit Grande fiabilit Less on-state losses - Geringe Verlustleistung Falble perte de puissance Type Vorw Thyristor |frmus | Frav trou [Vo |r It Twu |Resc |F |Fig. [Datasheet ing number Diode = [iprns levee fem Vro [fm tar No. |Datenblatt Bestellnummer Feuille technique Num. de commande To=50C|T; =85C 6.3 ms | 10 ms v A A kA |kA |[V |mo [ps [c [KAW IkN 240 90: 2.55 | 2.4 |2.00 |1.00 |15 0.20 CSR 148-71...13ib1 1100...1300 | 555 400 2565 |24 |1e0 11701 20 |'25 loo | +4 j28 1CH-E3.40574.1 CSR 148-11...13Id1 |1100...1300 130 ne ei3 20 270 a9 6 125 |0-20 | 4.4 |2e CSR 149-14...16iu1 | 1400..,1600 oO 105 oe ei 1 eed 20 9 {125 er 4.4}28 |CH-E9.40576.1 615 310 8.2 7.6 [1.31 ]0.40 115 0.08 IGH-E3.40576.1 CSR 327-08,..10id1 800...1000 ame aap eo ae 2 oan 0. 425 0.08 41 |29 630 235 63 | 5.8 [1.89 /0.51 |15 0.08 CSR 328-11...131b1 1100...1900 B40 240 63 |ss liza loss | 27 |'25 loos jt |29 496 1 CH-E3.40577.1 CSR 328-11...13id1 |it00..1300 | #86 =| 480 a 46 aaa oe 09 125 Re 41 |20 630 235 63 | 5.8 1.83 /0.61 |20 0.08 CSA 329-14...16lu4 1400...1600 | e145 240 63 |ss liza loss | ao (125 Re 11/20 gis _ |sio a2 a |1.31 GH-Es 4058.1 CSR929-14..16ix1 |1400...1600 | Boe [800 a2 ys 135 043 Oo 125 ane 11/29 . 505 200 46 | 4.3 [4.96 [1.09 [25 10.08 CSR 331-18...20 iv 1800...2000 | F415 205 46 143 (185 1116} 42112 loog | [29 \CH-E3.40578.1 600 240 5.5 5.2 11.49 11.00 /40 10.08 CSR 934-18.,.20 ixt 1800...2000 | 49 245 66 |62 |139 1108 | 5.0 1'25 loos jt? [29 860 340 66 | 6.4 [4.44 |o.66 [20 0.06 CSR 449-14,..16iu1 1400...1600 | en 185 sas |32 149 l1.34 4.0 [125 logo [tt [29 |CH-Es.40621.2 1840 730 13.9 |13.0 1|1.16 10.37 20 0.03 CSA Teo-14.,, 1iui 1400... 1600 51 Oo 05 4,05 5.8 1.57 1.1 at 6.0 125 0.10 ao IGH-E3.40588.1 1460 660 12.8 112.0 /1.90 j0.95 |25 0.03 CSR 731-18...20iv1 |1800...2000 [o4aig [465 3.07 | 2.9 {2.10 }i.26 | 6.0 |'*5 loo [22 [99 CH-E3,.40589,1 1640 640 15.0 114.0 [1.45 |o.40 |40 0.03 1740 875 15.0 [14.0 |1.32 /o.a9 |4o0 0.03 CSR 772-22.,.27 (x1 2200...2700 | 4gp 176 43 -|40 |188 loo4 | 6.6 |'25 loto (22 |CH-E3.40590.1 A BB SEMICONDUCTORS AG 38 D EM 0016838 0000037 T EYABB MaBbilder Thyristoren Thyristor | Dimensions Dimensions in mm A = Anode K = Gathode Abmessungen in mm. A= Anode K = Kathode G = Gate HK = Auxillary cathode 7 ) Fig. 29 eez G = Gate A= An HK = Hilfskathode SS Al-Kontakt Fig, 31 Cross saction silicon part of reverse conducting thyristor. Querschnitt Silizium-Tablette eines riickwartsleitenden Thyristors. Coupe d'une tablette silicum de thyristor A conduction inverse, Sf PTFE Aitre mein he Cable Dimensions des thyristors a FR S-2Q0 G = Gachelte HK = Cathode auzxiliaire Dimensions an mm oda K = Gathode ~ Gate Dolan white = Trees Blrichs Fig. 32 Fig. 32 Gate structure of reverse conducting thyristor. The diode part is situated on the outer rim of the chip. Gate-Struktur von riickw4&rtsleltenden Thyristoren. Die Diode istam ausseren Rand des Chips integriert. Gachette interdigite de thyristors 4 conduction inverse. La diode est intgre au bord extrieur du chip.