DATA SH EET
Product specification
Supersedes data of 1999 Nov 11 2001 Oct 26
DISCRETE SEMICONDUCTORS
BYD17 series
General purpose
controlled avalanche rectifiers
b
ook, halfpage
M3D121
2001 Oct 26 2
Philips Semiconductors Product specification
General purpose
controlled avalanche rectifiers BYD17 series
FEATURES
•Glass passivated
•High maximum operating temperature
•Low leakage current
•Excellent stability
•Guaranteed avalanche energy absorption capability
•Shipped in 8 mm embossed tape
•Smallest surface mount rectifier outline.
DESCRIPTION
Cavity free cylindrical glass package through Implotec(1)
technology.
This package is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
(1) Implotec is a trademark of Philips.
o
lumns
MAM061
ka
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage
BYD17D −200 V
BYD17G −400 V
BYD17J −600 V
BYD17K −800 V
BYD17M −1000 V
VRWM crest working reverse voltage
BYD17D −200 V
BYD17G −400 V
BYD17J −600 V
BYD17K −800 V
BYD17M −1000 V
VRcontinuous reverse voltage
BYD17D −200 V
BYD17G −400 V
BYD17J −600 V
BYD17K −800 V
BYD17M −1000 V
2001 Oct 26 3
Philips Semiconductors Product specification
General purpose
controlled avalanche rectifiers BYD17 series
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the
“General Part of associated Handbook”
.
IF(AV) average forward current Ttp = 105 °C;
averaged over any 20 ms period;
see Figs 2 and 4
−1.5 A
Tamb =65°C; PCB mounting (see
Fig.9);
averaged over any 20 ms period;
see Figs 3 and 4
−0.6 A
IFSM non-repetitive peak forward current t = 10 ms half sinewave;
Tj=T
j max prior to surge;
VR=V
RRMmax
−20 A
ERSM non-repetitive peak reverse avalanche
energy L = 120 mH; Tj=T
j max prior to
surge; inductive load switched off −7mJ
T
stg storage temperature −65 +175 °C
Tjjunction temperature see Fig.5 −65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFforward voltage IF= 1 A; Tj=T
j max; see Fig.6 −−0.93 V
IF= 1 A; see Fig.6 −−1.05 V
V(BR)R reverse avalanche
breakdown voltage IR= 0.1 mA
BYD17D 225 −−V
BYD17G 450 −−V
BYD17J 650 −−V
BYD17K 900 −−V
BYD17M 1100 −−V
I
Rreverse current VR=V
RRMmax; see Fig.7 −−1µA
V
R
=V
RRMmax; Tj= 165 °C; see Fig.7 −−100 µA
trr reverse recovery time when switched from IF= 0.5 A to IR=1A;
measured at IR= 0.25 A; see Fig.10 −3−µs
C
ddiode capacitance VR= 0 V; f = 1 MHz; see Fig.8 −21 −pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 30 K/W
Rth j-a thermal resistance from junction to ambient note 1 150 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
2001 Oct 26 4
Philips Semiconductors Product specification
General purpose
controlled avalanche rectifiers BYD17 series
GRAPHICAL DATA
Fig.2 Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
a = 1.57; VR=V
RRMmax;δ= 0.5.
handbook, halfpage
0 200160120
0
MBH394
1
2
3
8040 Ttp (°C)
IF(AV)
(A)
0 200160120
0
MSC293
0.2
0.4
0.6
0.8
1.0
8040 Tamb (°C)
IF(AV)
(A)
Fig.3 Maximum permissible average forward
current as a function of ambient
temperature (including losses due to
reverse leakage).
a = 1.57; VR=V
RRMmax;δ= 0.5.
Device mounted as shown in Fig.9.
Fig.4 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
a=I
F(RMS)/IF(AV); VR=V
RRMmax;δ= 0.5.
handbook, halfpage
0 1.61.2
0
MBH395
0.5
1.0
1.5
2.0
2.5
0.80.4
P
(W)
IF(AV) (A)
a = 3 1.42
1.57
2.5 2
Solid line = VR.
Dotted line = VRRM;δ= 0.5.
Fig.5 Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
0
DGJKM
400 800 1200
200
0
100
50
150
MGC736
Tj
VR, VRRM (V)
( C)
o
2001 Oct 26 5
Philips Semiconductors Product specification
General purpose
controlled avalanche rectifiers BYD17 series
Solid line: Tj=25°C.
Dotted line: Tj= 175 °C.
Fig.6 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
6
4
2
021
MBG048
IF
(A)
VF (V)
Fig.7 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
2000
103
MGC739
102
10
116012040 80
(µA)
IR
Tj (oC)
VR=V
RRMmax.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
1
MGC740
10 102103
1
102
10
(pF)
Cd
VR (V)
MSB213
4.5
2.5
1.25
50
50
Fig.9 Printed-circuit board for surface mounting.
Dimensions in mm.
2001 Oct 26 6
Philips Semiconductors Product specification
General purpose
controlled avalanche rectifiers BYD17 series
handbook, full pagewidth
10 Ω
1 Ω
50 Ω
25 V
DUT
MAM057
+trr
0.5
0
0.5
1.0
IF
(A)
IR
(A)
t
0.25
Fig.10 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤7 ns.
Source impedance: 50 Ω; tr≤15 ns.
2001 Oct 26 7
Philips Semiconductors Product specification
General purpose
controlled avalanche rectifiers BYD17 series
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOD87 100H03 99-03-31
99-06-04
Hermetically sealed glass surface mounted package;
ImplotecTM(1) technology; 2 connectors SOD87
UNIT D
mm 2.1
2.0 2.0
1.8 3.7
3.3 0.3
D1 HL
DIMENSIONS (mm are the original dimensions) H
DD1
LL
(2)
0 1 2 mm
scale
Notes
1. Implotec is a trademark of Philips.
2. The marking indicates the cathode.
ka
2001 Oct 26 8
Philips Semiconductors Product specification
General purpose
controlled avalanche rectifiers BYD17 series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany otherconditionsabove thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusing orsellingthese products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofanyoftheseproducts,conveys nolicence ortitle
under any patent, copyright, or mask work right to these
products,and makes norepresentationsor warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Oct 26 9
Philips Semiconductors Product specification
General purpose
controlled avalanche rectifiers BYD17 series
NOTES
2001 Oct 26 10
Philips Semiconductors Product specification
General purpose
controlled avalanche rectifiers BYD17 series
NOTES
2001 Oct 26 11
Philips Semiconductors Product specification
General purpose
controlled avalanche rectifiers BYD17 series
NOTES
© Koninklijke Philips Electronics N.V. 2001 SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
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Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
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Printed in The Netherlands 613510/04/pp12 Date of release: 2001 Oct 26 Document order number: 9397 750 08864
