ALPHA IND/ SEMICONDUCTOR Y8E D MM 05465443 0001343 OT? MBALP GaAs Parametric Amplifier Varactors tt i = * ) 2 * e o x 2 T-O7-1\ Features @ High Gain and Low Noise Temperature @ Deloach and Houlding Measurements @ Insured Reproductibility @ High Reliability and Space Qualified @ Low Temperature Performance Description By controlling the epitaxial material doping level and profile, Alpha diffused gallium arsenide parametric am- plifier diodes provide low series resistance to low tem- peratures (20K) and large capacitance swing with ap- plied bias for optimum bandwidth. Frequency cutoff in this data presentation is meas- ured using the Houlding method. Environmenial Capability Thermal Shock ..0.........0:ceeesseeeees -195.8C to +100C CentrifUge oo. eeeseeeeeseeeeseersssssssssceeens 20,000 G Gross Leak Test ...........ccccceccceecesteseseneeeeees 105 cc/sec Fine Leak Test .........ccccc cc cceccsseceeesssrerees 10 cc/sec 200C Burn-in AllGaAs varactors are subjected to burn-in screening priorto final measurements: typical burn-in for CUO =0.3 pF is: 60 Hz, |, = 30 mA. V, = 2.5 VC (50 ohm load) at 100C, 16 hours. DVE 4556 Series Voltage Breakdown Vv," = 6 Volts Package Outline: 023-001 Minimum Junction Capacitance Range, C,, (pF) F.,@(GHz) 3-35 35-4 4-.45 -45-.55 .55-.65 .65-.8 .8-1.0 1.0-1.2 200 DVE4556-01 | DOVE4556-11 | DVE4556-12 | DVE4556-31 | DVE4556-41 | DVE4556-51 | DVE4556-61 | DVE4556-71 250 DVE4666-02 | DVE4556-12 | DVE4556-22 | DVE4556-32 | DVE4556-42 | DVE4556-52 | DVE4556-62 300 DVE4556-03 | DVE4556-13 | DVE4556-23 | DVE4556-33 | DVE4556-43 | DVE4556-43 | DVE4556-53 350 DVE4556-04 | DVE4556-14 | DVE4556-24 | DVE4556-34 | DVE4556-44 400 DVE4556-05 | DVE4556-15 | DVE4556-25 | DVE4556-35 450 DVE4556-06 | DVE4556-16 | DVE4556-26 500 DVE4556-08 | DVE4556-17 550 DVE4556-08 Power Dissipation, P, (at 25C) oo. cccscssssseseecsseescsessesessesecseseesesaececssssccsssscsussscsussvaseesserseeansaenaeaasass 200 mW Operating Temperature 00.0... cceecscsesscsscsscssesteseeseseeserssecsssssssscscssscsecaseaecaecausessaseasessessesseases +175C Max (T,) . . C, Capacitance Ratio 0... cc cccssscscessssesssseesessesesceseeccnesecsesecsevsesevsessussvassasssesssacsceacencsesauvacucarsausatsassncaness S 22.0ALPHA IND/ SEMICONDUCTOR 4OE D MM 0585443 0001384 T33 MBALP 7-07-)/ GaAs Parametric Amplifier Varactors DVE 4557 Series Voltage Breakdown V,"" = 6 Volts Package Outline: 082-001 Minimum Junction Capacitance Range, C,. (pF) F,,,(GHz) .3-.35 35-4 4-45 45 -.55 55-.65 65-8 .8-1.0 1.0-1.2 200 DVE4557-01 | DVE4557-11 | DVE4557-12 | DVE4557-31 | DVE4557-41 | DVE4557-51 | DVE4557-61 | DVE4557-71 250 DVE4667-02 | DVE4557-12 | DVE4557-22 | DVE4557-32 | DVE4557-42 | DVE4557-52 | DVE4557-62 300 DVE4557-03 | DVE4557-13 | DVE4557-23 | DVE4557-33 | DVE4557-43 | DVE4557-43 | DVE4557-53 350 DVE4557-04 | DVE4557-14 | DVE4557-24 | DVE4557-34 | DVE4557-44 400 DVE4557-05 | DVE4557-15 | DVE4557-25 | DVE4557-35 450 DVE4557-06 | DVE4557-16 | DVE4557-26 500 DVE4557-08 | DVE4557-17 550 DVE4557-08 Power Dissipation, P, (at 25C) .....c.ecscsesssseesesseneenenenssnssesesessenensnsssnsnenenecnsnenecesseneasanssassasavavensesesnenssnees 200 mW Operating Temperature ............ ce ccccssecensssseeesenensesereneescteeseensmsnanaunensseneneseseneneesaaaaenenenenereeegs +175C Max (T,) Capacitance Ratio .......cccsccsecsecsesseeseecsssssstessessesseeseeseesecesessecsecsueeneenesneensecussisenesassunsnnsseaseaceneseesenncnnennane e 22.0 DVE 4558 Series i Voltage Breakdown V,"" = 6 Volts Package Ouiline: 290-001 Minimum Junction Capacitance Range, C,, (pF) F,,(GHz) 3-.35 35-4 445 -45-.55 55-65 65-8 2-1.0 1.0-1.2 200 DVE4858-01 | DVE4558-11 | DVE4556-12 | DVE4558-31 | OVE4558-41 | DVE4558-51 | DVE4558-61 | DVE4558-71 250 DVE4668-02 | DVE4558-12 | DVE4558-22 | DVE4558-32 | DVE4558-42 | DVE4558-52 | DVE4558-62 300 DVE4558-03 | DVE4558-13 | DVE4558-23 | DVE4558-33 | DVE4558-43 | DVE4558-43 | DVE4558-53 350 DVE4558-04 | DVE4558-14 | DVE4558-24 | DVE4558-34 | DVE4558-44 400 DVE4558-05 | DVE4558-15 | DVE4558-25 | DVE4558-35 450 DVE4558-06 | DVE4558-16 | DVE4558-26 500 DVE4558-08 | DVE4558-17 550 DVE4558-08 Power Dissipation, P, (at 25C).........sscsssesseeeseceeseesstsssnenserensensseessesesseasensneensnenesaceneecesccssseersecanesterenens 200 mW Operating Temperature 0.0... ececessssssseseseeseesesesenenenensesesseressstensseaneeeeeeneseseasaeeseeteneeeeseas +175C Max (T,) Capacitance Ratio ..........ccccseesssesesesesssessensessesensenenensececsesesssssessssueanseseensasnesssseescasaeaceceaensnananeeesesannens i 22.0 Cc DVE 5337 Series j Low Temperature (4.2K) Varactors Voltage Breakdown Package Outline: 023-001 V,"= 6 Volts Type F,, GHz F,,,9 GHz F,, GHz D5337-00 150 65 0.3-1.0 D5337-06 150 85 0.3-0.7 D5337-12 150 110 0.3-0.5 Notes: 1, Breakdown Voltage (V,) is measured at 10 IA reverse current. 2. Total Capacitance is measured at 1 MHz and 0 bias. Junction Capacitance (C.,) is calculated by subtracting the typical package capacitance from the total capacitance. Capacitance selection + 0.025 is standard. Various other package styles are available upon request. 3. Frequency cutoff is quoted for measurement by the Houlding method. Technical Note on Frequency Cutoff Measurement - A Brief Description Frequency cutoff measurements using the Deloach method of measurement as well as the Houlding method are available. The Deloach measurement technique eliminated holder losses present in the conventional Houlding method at capacitance below 0.3 pF. Above 0.3 pF, the Houlding method is accurate. The Deloach method also gives the packaged diode resonance frequency, F,, as direct measurement. F,can be effectively used as an indication of diode series and parallel resonance comparing consistency within a pro- duction lot and for lot to lot performance. A comparison of Deloach frequency cutoff-vs.- Houlding is shown in Figure 1. We find Fc Deloach = 1.4 at C,, = 0.4pF Fe Houlding in Figure 2, Deloach resonance frequency vs. junction capacitance is shown. 4-86ALPHA IND/ SEMICONDUCTOR WBE D MM 0585443 0001385 97T MALP T+o07-/\ GaAs Parametric Amplifier Varactors Performance Curves 400 100 350 50 N L 3 3 300 % PN : f * 20 Pp = & 250h Qo 8 10! ) 4 boi hr {ot . 0.7 0.2 0.5 TO 2.0 5.0 200 C,,, (pf) we 4 JO Figure 2. Deloach Resonant Frequency vs. C,, (082 Outline) 1 50-- a Ly i 1 j ou! T5650 300 250 +300 3 50 400 Fu Houlding Method Figure 1. Frequency Cutoff- Deloach vs. Houlding Method (C,, = 0.4pF) Deloach Method - Reduced Signal Attenuator +s] Waveguide -] Receiver Generator Cavity A 6 Ss o a Output Signal Photograph of Deloach Cavities Notes: 1. Deloach, A New Microwave Measurement Technique to Charac- 3. Tis defined as the insertion loss at resonance in db. Thus, terize Diodes and an 800 Gc Cutoff Frequency Varactor at Zero Volts Bias. IEEE Transactions on Microwave Theory and Tech- T = 10 tht nique, January 1964, pp. 15-20. The loss at f,and f,is 3db less than the insertion loss at resonance. 2. Signal is applied to diode at series resonance frequency of diode: tt { 4, Calculate foo = _1i oJ 16, (Ove JO This is the cutoff frequency for packaged diode in the Deloach holder. : . C,, fog is calculated by: f,., = fgg X c. J-6 4-87ALPHA IND/ SEMICONDUCTOR GaAs Parametric Amplifier Varactors 46E D MM 0585443 0001386 806 MBALP7-07-// Houlding Method Signal Variable Source DC Power at Fm Supply . Reduced Height . Directional Movable E-H eouce q Receiver Coupl Short Diode oupler or Tuner Holder 2 2 . . : 1 A A = Signal power with movable short in -= ide T2 a2pe wavegui a2p? = Signal power with diode bias at -% volt. Procedure: 1. Measure test diode for C,, and C, ,,. 2. Match diode in Houlding circuit using E-H tuner with 0 volts bias applied. 3. Bias diode to -1/2 volts and measure the reflection coefficient, I, caused by the change in diode impedance. Fm 2 4. Calculate F,, (GHz) = ~ x 1\z C.. 1 (t) 1 where Fm = 10 GHz. C,, 5. Calculate f,, = f,, x G For further information see: 1. Houlding, N., Measurement of Varactor Quality Microwave J. Vol. 3 pp 40-45 January 1960 2. Harrison, R.I. Parametric Diode Q Measurements" Microwave J. Vol. 3 pp 43-46 May 1960 4-88