High Performance InGaAs p-i-n Photodiode
‘FC’ Active Device Mount
13PD300-FC
The 13PD300-FC, an InGaAs photodiode with a 300µm-diameter photosensitive region
packaged in a TO-46 header and aligned in an FC active device mount, is designed for
applications in both moderate-bit-rate fiberoptic communications and high sensitivity
measurement equipment. This device is one of the most versatile of the
Telcom Devices’ family of optoelectronic components. Planar semiconductor design and
dielectric passivation provide superior performance. Reliability is assured by hermetic sealing
and a 100% purge burn-in ( 200oC, 15 hours, Vr = 20V ).
Features
Planar Structure
Dielectric Passivation
100% Purge Burn-In
High Responsivity
Device Characteristics:
Parameters Test Conditions Min Typ Max Units
Operating Voltage - - - -20 Volts
Dark Current -5V - 1.0 10 nA
Capacitance -5V - 4 12 pF
Responsivity 1300nm 0.7 0.9 - A/W
Rise/Fall - - - 0.5 ns
Frequency Response (-3dB) - 300 - MHz
Absolute Maximum Ratings
Reverse Voltage 30 Volts
Forward Current 25 mA
Reverse Current 5 mA
Operating Temperature -40oC to + 85oC
Storage Temperature -40oC to + 85oC
Soldering Temperature 250oC
829 Flynn Road, Camarillo, CA 93012 tel(805)445-4500 fax(805)445-4502
