MwT-8 16 GHz High Power GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns 75 75 FEATURES 68 * 0.6 WATT POWER OUTPUT AT 12 GHz * +40 THIRD ORDER INTERCEPT * HIGH ASSOCIATED GAIN * 0.3 MICRON REFRACTORY METAL/GOLD GATE * 1200 MICRON GATE WIDTH * CHOICE OF CHIP AND ONE PACKAGE TYPE 305 100 75 64 122 673 75 64 CHIP THICKNESS = 125 DESCRIPTION The MwT-8 is a GaAs MESFET device which is ideally suited to narrow-band applications such as cellular telephone, PCN, point-to-point communications links, and other wireless applications as the driver transistor for the output power amplifier. The third-order intercept performance of the MwT-8 is excellent, typically 12 dB above the 1 dB compression point. The chip is produced using MwT's reliable metal system and devices from each wafer are screened to insure reliability. All chips are passivated using MwT's patented "Diamond-Like Carbon" process for increased durability, Designers can use MwT's unique BIN selection feature to choose devices from narrow Idss ranges, insuring consistent circuit operation. DC SPECIFICATIONS AT Ta = 25C SYMBOL PARAM. & CONDITIONS IDSS Gm Vp BVGSO BVGDO Rth UNITS Saturated Drain Current Vds= 4.0 V VGS= 0.0 V Transconductance Vds= 2.0 V VGS= 0.0 V Pinch-off Voltage Vds= 3.0 V IDS= 5.0 mA Gate-to-Source Breakdown Volt. Igs= -0.8 mA Gate-to-Drain Breakdown Volt. Igd= -0.8 mA RF SPECIFICATIONS AT Ta = 25C MIN mA 120 mS 144 TYP -2.0 -6.0 V SYMBOL UNITS MIN TYP 480 P1dB Output Power at 1 dB Compression VDS= 6.0 V IDS=180mA 12 GHz dBm 27.0 28.0 PAE Power Added Efficiency VDS= 6.0 V IDS=180mA 12 GHz % 25 35 SSG Small Signal Gain VDS= 6.0V IDS= 180mA 12 GHz dB 7 7.5 IDSS Recommended IDSS Range for Optimum P1dB 160 V V MAX -5.0 -12.0 -8.0 MwT-8 Chip, C/W MwT-871, *Overall Rth depends on case mounting. PARAMETER Cgd Rd Cgs GATE Cpg Ri Ld DRAIN Rds gm tau mA 320440 45 60* DEVICE EQUIVALENT CIRCUIT MODEL Rg FREQ -12.0 Thermal Resistance Lg PARAMETERS AND CONDITIONS Cds Rs Ls SOURCE Cpd Source Resistance Source Inductance Drain-Source Resistance Drain-Source Capacitance Drain Resistance Drain Pad Capacitance Drain Inductance Gate Bond Wire Inductance Gate Pad Capacitance Gate Resistance Gate-Source Capacitance Channel Resistance Gate-Drain Capacitance Transconductance Transit Time VALUE Rs Ls Rds Cds Rd Cpd Ld Lg Cpg Rg Cgs Ri Cgd gm tau 0.3 0.055 60.0 0.1 0.3 0.2 0.1 0.12 0.25 0.2 1.4 1.0 0.05 150.0 1.0 nH pF pF nH nH pF pF pF mS psec ORDERING INFORMATION Chip Package 71 MwT-8 MwT-871 NOTE: For Package information, please see supplimentary application note from our website at www.mwtinc.com. When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required. 4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208 All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice. MwT-8 16 GHz High Power GaAs FET MwT-8 DUAL BIAS MwT-8 OPTIONAL BONDING Output Reference Plane 50 Output Microstrip Output Reference Plane 14 Mils Long 15 Mils Long 2 Mils Copper Heat Sink 5 Mils Below Level of Microstrip 50 Output Microstrip 2 Mils Copper Heat Sink 5 Mils Below Level of Microstrip MwT FP8 MwT FP8 20 Mils 20 Mils 2 Mils 7 Mils Long Gold Ridge 5x 33x 5 Mils All Bond (1 each) 50 Input Microstrip 18 Mils Long 50 Input Microstrip Wires are 1.0 Mil Diameter Input Reference Plane 2 Mils 7 Mils Long Input Reference Plane All Bond Wires are 1.0 Mil Diameter Gold Ridge 10x 10x 5 For Dual Bias, or 25pF Caps for Single Bias (2 each) SAFE OPERATING LIMITS vs. BACKSIDE CHIP 700 150 125 Absolute Maximum Continuous Maximum 75C or Lower 100 600 MAXIMUM RATINGS AT Ta = 25C Ids (mA) 500 125 75C or Lower 100 SYMBOL 400 VDS Tch Tst Pin 300 PARAMETER UNITS Drain to Source Voltage Channel Temperature Storage Temperature RF Input Power V C C mW CONT MAX1 ABSOLUTE MAX2 See Safe Operating Limits +150 +175 -65 to +150 +175 480 720 200 NOTES: 1. Exceeding any one of these limits in continuous operation may reduce the mean-time-to-failure below the design goals. 2. Exceeding any one of these limits may cause permanent damage. 100 0 0 2 4 6 8 Vds (V) BIN SELECTION BIN# 1 IDSS (mA) 120- 140- 160140 160 180 2 3 4 5 6 180200 200220 220240 7 240260 8 9 10 11 12 13 14 15 16 17 18 260280 280300 300320 320340 340360 360380 380400 400420 420440 440460 460480 BIN ACCURACY STATEMENT When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required. 4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208 All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.