••
••
• 0.6 WATT POWER OUTPUT AT 12 GHz
••
••
• +40 THIRD ORDER INTERCEPT
••
••
• HIGH ASSOCIATED GAIN
••
••
• 0.3 MICRON REFRACTORY METAL/GOLD GATE
••
••
• 1200 MICRON GATE WIDTH
••
••
• CHOICE OF CHIP AND ONE PACKAGE TYPE
SYMBOL P ARAMETERS AND CONDITIONS FREQ UNITS MIN TYP
P1dB
PAE
SSG
IDSS
Output Power at 1 dB Compression
VDS= 6.0 V IDS=180mA
Power Added Efficiency
VDS= 6.0 V IDS=180mA
Small Signal Gain
VDS= 6.0V IDS= 180mA
Recommended IDSS Range
for Optimum P1dB
12 GHz
12 GHz
12 GHz
dBm
%
dB
mA
27.0
25
28.0
35
7.5
320-
440
RF SPECIFICATIONS AT Ta = 25°°
°°
°C
MwT-8
16 GHz High Power
GaAs FET
DESCRIPTION
The MwT-8 is a GaAs MESFET device which is ideally suited to narrow-band applications such as cellular telephone, PCN, point-to-point
communications links, and other wireless applications as the driver transistor for the output power amplifier. The third-order intercept
performance of the MwT-8 is excellent, typically 12 dB above the 1 dB compression point. The chip is produced using MwT’s reliable
metal system and devices from each wafer are screened to insure reliability. All chips are passivated using MwT’s patented “Diamond-Like
Carbon” process for increased durability, Designers can use MwT’s unique BIN selection feature to choose devices from narrow Idss
ranges, insuring consistent circuit operation.
64
75
12275 673
100
75
305
CHIP THICKNESS = 125
DC SPECIFICATIONS AT Ta = 25°°
°°
°C
SYMBOL P ARAM. & CONDITIONS UNITS MIN TYP MAX
IDSS
Gm
Vp
BVGSO
BVGDO
Saturated Drain Current
Vds= 4.0 V VGS= 0.0 V
Transconductance
Vds= 2.0 V VGS= 0.0 V
Pinch-off Voltage
Vds= 3.0 V IDS= 5.0 mA
Gate-to-Source Breakdown Volt.
Igs= -0.8 mA
Gate-to-Drain Breakdown Volt.
Igd= -0.8 mA
mA 120
-2.0
480
mS 144 160
-5.0
V
V
V
°°
°°
°C/W
-6.0
-8.0
-12.0
-12.0
45
60*
Lg Rg Rd Ld
Cgd
GATE DRAIN
Cgs
Cpg
Rds Cds Cpd
Ri
Rs
Ls
gm
tau
SOURCE
DEVICE EQUIVALENT CIRCUIT MODEL
Gate Bond Wire Inductance
Gate Pad Capacitance
Gate Resistance
Gate-Source Capacitance
Channel Resistance
Gate-Drain Capacitance
Transconductance
Transit T ime
Lg
Cpg
Rg
Cgs
Ri
Cgd
gm
tau
0.12 nH
0.25 pF
0.2 Ω
1.4 pF
1.0 Ω
0.05 pF
150.0 mS
1.0 psec
Source Resistance
Source Inductance
Drain-Source Resistance
Drain-Source Capacitance
Drain Resistance
Drain Pad Capacitance
Drain Inductance
VALUE
PARAMETER
Rs
Ls
Rds
Cds
Rd
Cpd
Ld
0.3 Ω
0.055 nH
60.0 Ω
0.1 pF
0.3 Ω
0.2 pF
0.1 nH
Rth Thermal
Resistance
MwT-8
16 GHz High Power
GaAs FET
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-22084268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
DC SPECIFICATIONS AT Ta = 25°°
°°
°C RF SPECIFICATIONS AT Ta = 25°°
°°
°C
FEATURESFEATURES
NOTE:
For Package information, please see supplimentary application note from our website at
www.mwtinc.com. When placing order or inquiring, please specify BIN range, wafer no., if
known, and screening level required.
ORDERING INFORMATIONORDERING INFORMATION
Chip MwT-8
Package 71 MwT-871
All Dimensions in Microns
MwT-8 Chip,
MwT-871,
*Overall Rth depends on case mounting.
DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM
7
75 64
68
MwT-8
16 GHz High Power
GaAs FET
MwT-8
16 GHz High Power
GaAs FET
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-22084268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
75°°
°°
°C or Lower
100125
75°°
°°
°C or Lower
100125150
0 2 4 6 8
700
600
500
400
100
0
Vds (V)
Ids (mA)
Absolute Maximum Continuous Maximum
SAFE OPERATING LIMITS vs. BACKSIDE CHIP
MAXIMUM RATINGS AT Ta = 25°°
°°
°C
SYMBOL
VDS
Tch
Tst
Pin
P ARAMETER UNITS CONT MAX1ABSOLUTE MAX2
Drain to Source Voltage
Channel T emperature
Storage T emperature
RF Input Power
See Safe Operating Limits
°C
°C480
+175
+175
720
V
mW -65 to +150
+150
NOTES: 1. Exceeding any one of these limits in continuous operation may reduce the
mean-time-to-failure below the design goals.
2. Exceeding any one of these limits may cause permanent damage.
MwT-8
DUAL BIAS
50 Ω Output
Microstrip
50 Ω Input
Microstrip
Output Reference
Plane
Input Reference
Plane
7 Mils Long
14 Mils Long 2 Mils
MwT
2 Mils
All Bond
W ires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level
of Microstrip
Gold Ridge
5x 33x 5 Mils
(1 each)
FP8
MwT-8
OPTIONAL BONDING
50 Ω Output
Microstrip
50 Ω Input
Microstrip
Output Reference
Plane
Input Reference
Plane
7 Mils Long
15 Mils Long 2 Mils
MwT
2 Mils
All Bond
W ires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level of
Microstrip
Gold Ridge
10x 10x 5 For
Dual Bias, or
25pF Caps for
Single Bias
(2 each)
FP8
MAXIMUM RATINGS AT Ta = 25°°
°°
°C
IDSS
(mA)
BIN# 1 2 3
120-
140 140-
160 160-
180
45 6
180-
200 200-
220 220-
240
789
240-
260 260-
280 280-
300
10 11 12
300-
320 320-
340 340-
360
13 14 15
360-
380 380-
400 400-
420
16 17 18
420-
440 440-
460 460-
480
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required.
BIN SELECTION
BIN ACCURACY STATEMENT
18 Mils Long
200
300
