© 2004 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 300 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ300 V
VGS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C 73 A
IDM TC= 25°C, pulse width limited by TJM 292 A
IAR TC= 25°C 73 A
EAR TC= 25°C 60mJ
EAS 2.5 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns
TJ ≤ 150°C, RG = 2 Ω
PDTC= 25°C 500 W
TJ-55 to +150 °C
TJM 150 °C
Tstg -55 to +150 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL≤ 1 mA t = 1 s 3000 V~
MdMounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.5/13 Nm/lb.in.
Weight 30 g
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1 mA 300 V
VGS(th) VDS = VGS, ID = 4 mA 2.0 4.0 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C25µA
VGS = 0 V TJ = 125°C2mA
RDS(on) VGS = 10 V, ID = 0.5 ID25 45 m ΩΩ
ΩΩ
Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
HiPerFETTM
Power MOSFETs
Q-Class
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
Features
•IXYS advanced low Qg process
•Low gate charge and capacitances
- easier to drive
-faster switching
•Unclamped Inductive Switching (UIS)
rated
•Low RDS (on)
•Fast intrinsic diode
•International standard package
•miniBLOC with Aluminium nitride
isolation for low thermal resistance
•Low terminal inductance (<10 nH) and
stray capacitance to heatsink (<35pf)
•Molding epoxies meet UL 94 V-0
flammability classification
Applications
•DC-DC converters
•Battery chargers
•Switched-mode and resonant-mode
power supplies
•DC choppers
•Temperature and lighting controls
Advantages
•Easy to mount
•Space savings
•High power density
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
DS98742B(1/04)
VDSS = 300 V
ID25 = 73 A
RDS(on) = 45 mΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250 ns
IXFN 73N30Q
Preliminary data sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 73N30Q
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 30 55 S
Ciss 5400 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 pF
Crss 370 pF
td(on) 37 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 36 ns
td(off) RG = 1.0 Ω (External), 82 ns
tf12 ns
Qg(on) 195 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 42 nC
Qgd 82 nC
RthJC 0.22 K/W
RthCK 0.05 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 73 A
ISM Repetitive; pulse width limited by TJM 292 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr 250 ns
QRM IF = 25A, -di/dt = 100 A/µs, VR = 100 V 0.8 µC
IRM 7A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
© 2004 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
30
60
90
12 0
15 0
18 0
03691215
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
5V
6V
7V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
20
40
60
80
0 12345678
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
20
40
60
80
0 0.5 1 1.5 2 2.5 3 3.5
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D25
Value vs.
Junction Temperature
0.4
0.7
1
1. 3
1. 6
1. 9
2.2
2.5
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
I
D
= 73A
I
D
= 36.5A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Temperature
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. R
DS(on)
Normalized to I
D25
Value vs. I
D
0.7
1
1. 3
1. 6
1. 9
2.2
2.5
2.8
3.1
0 30 60 90 120 150 180
I
D
- Amperes
R
DS(on)
- Normalized
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
IXFN 73N30Q
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 73N30Q
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
Fig. 11. Capacitance
10 0
10 0 0
10000
0 10203040
V
DS
- Volts
Capacitance - pF
C
iss
C
oss
C
rss
f = 1M hz
Fig. 7. Input Admittance
0
30
60
90
12 0
15 0
3.5 4 4.5 5 5.5 6 6.5 7
V
GS
- Volts
I
D
- Amperes
TJ = -40ºC
25ºC
125ºC
Fig. 12. Maximum Transient Thermal
Resistance
0.01
0.1
1
1 10 100 1000
Pulse Width - milliseconds
R
(th)JC
-
(ºC/W)
Fig. 8. Transconductance
0
20
40
60
80
10 0
12 0
0 30 60 90 120 150 180 210
I
D
- Amperes
G
fs
- Siemens
TJ = -40ºC
25ºC
125ºC
Fig. 9. Source Current vs. Source-To-Drain
Voltage
0
30
60
90
12 0
15 0
18 0
0.4 0.6 0.8 1 1.2 1.4
V
SD
- Volts
I
S
- Amperes
TJ = 125ºC TJ = 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
0 50 100 150 200
QG - nanoCoulombs
VGS - Volts
VDS = 125V
ID = 36.5A
IG = 10mA
