2N6660JAN/JANTX/JANTXV Vishay Siliconix JAN Qualified N-Channel 60-V (D-S) MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Military Qualified Low On-Resistance: 1.3 W Low Threshold: 1.7 V Low Input Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output Leakage Guaranteed Reliability Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage TO-205AD (TO-39) Device Marking Side View S 1 JAN2N6660* "S" fllxxyy 2 "S" = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code 3 G D *Note: or JANTX2N6660 JANTXV2N6660 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ TC = 25_C TC = 100_C Pulsed Drain Currenta Power Dissipation TA = 25_C 0.62 A 3 6.25 PD 0.725 Thermal Resistance, Junction-to-Ambientb RthJA 170 Thermal Resistance, Junction-to-Case RthJC 20 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range V 0.99 ID IDM TC = 25_C Unit W _ _C/W _C Notes a. Pulse width limited by maximum junction temperature. b. Not required by Military Spec. Document Number: 70223 S-04279--Rev. B, 16-Jul-01 www.vishay.com 11-1 2N6660JAN/JANTX/JANTXV Vishay Siliconix SPECIFICATIONSa Limits Parameter Symbol Test Conditions Min Typb V(BR)DSS VGS = 0 V, ID = 10 mA 60 75 VDS = VGS, ID = 1 mA 0.8 1.7 Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage TC = 125_C IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currentc ID(on) "100 "500 TC = 125_C VDS = 48 V, VGS = 0 V Drain-Source On-Resistancec rDS(on) Diode Forward Voltage nA 1 100 TC = 125_C VDS = 10 V, VGS = 10 V 2 VGS = 5 V, ID = 0.3 A 2 VGS = 10 V, ID = 1 A 1.3 3 2.4 5.6 TC = 125_C Forward Transconductancec V 0.3 VDS = 0 V, VGS = "20 V Gate-Body Leakage 2 2.5 TC = -55_C VGS(th) m mA A 5 gfs VDS = 7.5 V, ID = 0.525 A 170 350 VSD IS = 0.99 A, VGS = 0 V 0.7 0.8 1.6 35 50 25 40 7 10 W mS V Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Drain-Source Capacitance Cds VDS = 25 V, VGS = 0 V f = 1 MHz pF 30 Switchingd Turn-On Time tON Turn-Off Time tOFF VDD = 25 V, RL = 23 W ID ^ 1 A, VGEN = 10 V RG = 25 W Notes a. TA = 25_C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%. d. Switching time is essentially independent of operating temperature. e. For typical characteristics curves see the 2N6659/2N6660, VQ1004J/P data sheet. www.vishay.com 11-2 8 10 8.5 10 ns VNDQ06 Document Number: 70223 S-04279--Rev. B, 16-Jul-01