2N6660JAN/JANTX/JANTXV
Vishay Siliconix
Document Number: 70223
S-04279—Rev. B, 16-Jul-01 www.vishay.com
11-1
JAN Qualified N-Channel 60-V (D-S) MOSFETs
PRODUCT SUMMARY
V(BR)DSS Min (V) rDS(on) Max (W)VGS(th) (V) ID (A)
60 3 @ VGS = 10 V 0.8 to 2 0.99
FEATURES BENEFITS APPLICATIONS
DMilitary Qualified
DLow On-Resistance: 1.3 W
DLow Threshold: 1.7 V
DLow Input Capacitance: 35 pF
DFast Switching Speed: 8 ns
DLow Input and Output
Leakage
DGuaranteed Reliability
DLow Offset Voltage
DLow-Voltage Operation
DEasily Driven Without Buffer
DHigh-Speed Circuits
DLow Error Voltage
DMilitary Applications
DDirect Logic-Level Interface: TTL/CMOS
DDrivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
DBattery Operated Systems
DSolid-State Relays
1
2 3
TO-205AD
(TO-39)
Top View
DG
SDevice Marking
Side View
JAN2N6660*
“S” fllxxyy
“S” = Siliconix Logo
f = Factory Code
ll = Lot T raceability
xxyy = Date Code
*Note: or JANTX2N6660
JANTXV2N6660
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60
Gate-Source Voltage VGS "20 V
_TC = 25_C0.99
Continuous Drain Current (TJ = 150_C) TC = 100_CID0.62 A
Pulsed Drain CurrentaIDM 3
TC = 25_C6.25
Power Dissipation TA = 25_CPD0.725 W
Thermal Resistance, Junction-to-AmbientbRthJA 170 _
Thermal Resistance, Junction-to-Case RthJC 20 _C/W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C
Notes
a. Pulse width limited by maximum junction temperature.
b. Not required by Military Spec.
2N6660JAN/JANTX/JANTXV
Vishay Siliconix
www.vishay.com
11-2 Document Number: 70223
S-04279—Rev. B, 16-Jul-01
SPECIFICATIONSa
Limits
Parameter Symbol Test Conditions Min TypbMax Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 mA60 75
VDS = VGS, ID = 1 mA 0.8 1.7 2
Gate-Threshold Voltage VGS(th) TC = –55_C2.5 V
TC = 125_C0.3
VDS = 0 V, VGS = "20 V "100
Gate-Body Leakage IGSS TC = 125_C"500 nA
VDS = 48 V, VGS = 0 V 1
m
Zero Gate Voltage Drain Current IDSS TC = 125_C100 mA
On-State Drain CurrentcID(on) VDS = 10 V, VGS = 10 V 2 A
VGS = 5 V, ID = 0.3 A 2 5
Drain-Source On-ResistancecrDS(on) VGS = 10 V, ID = 1 A 1.3 3 W
TC = 125_C2.4 5.6
Forward T ransconductancecgfs VDS = 7.5 V, ID = 0.525 A 170 350 mS
Diode Forward Voltage VSD IS = 0.99 A, VGS = 0 V 0.7 0.8 1.6 V
Dynamic
Input Capacitance Ciss 35 50
Output Capacitance Coss VDS = 25 V, VGS = 0 V 25 40
Reverse Transfer Capacitance Crss
VDS = 25 V, VGS = 0 V
f = 1 MHz 7 10 pF
Drain-Source Capacitance Cds 30
Switchingd
T urn-On Time tON VDD = 25 V, RL = 23 W
^
8 10
Turn-Off Time tOFF ID ^ 1 A, VGEN = 10 V
RG = 25 W8.5 10 ns
Notes
a. TA = 25_C unless otherwise noted. VNDQ06
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW v300 ms duty cycle v2%.
d. Switching time is essentially independent of operating temperature.
e. For typical characteristics curves see the 2N6659/2N6660, VQ1004J/P data sheet.
