CM100TF-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six-IGBT IGBTMODTM H-Series Module 100 Amperes/1400 Volts B D X Q X Q X Z - M5 THD (7 TYP.) Bu P E u P Bv P Ev P BwP EwP Bu N Eu N Bv N Ev N BwN EwN S N P P P J R L C TYP A N U V W N T K G F M U M AA W H Y - DIA. (4 TYP.) AA E .110 TAB J V P P BuP EuP u BvP EvP v BwP EwP w BuN EuN BvN EvN BwN Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery (135ns) Free-Wheel Diode High Frequency Operation (20-25kHz) Isolated Baseplate for Easy Heat Sinking EwN N N Outline Drawing and Circuit Diagram Dimensions Inches A 4.21 Millimeters Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Dimensions Inches Millimeters 107.0 P 0.57 14.5 B 4.02 102.0 Q 0.55 14.0 C 3.540.01 90.00.25 R 0.47 12.0 D 3.150.01 80.00.25 S 0.43 11.0 E 1.57 40.0 T 0.39 10.0 F 1.38 35.0 U 0.33 8.5 G 1.28 32.5 V 0.30 7.5 H 1.26 Max. 32.0 Max W 0.24 Rad. Rad. 6.0 J 1.18 30.0 X 0.24 6.0 K 0.98 25.0 Y 0.22 5.5 L 0.96 24.5 Z M5 Metric M5 M 0.79 20.0 AA 0.08 2.0 N 0.67 17.0 Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM100TF-28H is a 1400V (VCES), 100 Ampere Six-IGBT IGBTMODTM Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 100 28 355 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100TF-28H Six-IGBT IGBTMODTM H-Series Module 100 Amperes/1400 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Characteristics Symbol CM100TF-28H Units Junction Temperature Tj -40 to 150 C Storage Temperature Tstg -40 to 125 C Collector-Emitter Voltage (G-E-SHORT) VCES 1400 Volts Gate-Emitter Voltage (C-E-SHORT) VGES 20 Volts IC 100 Amperes ICM 200* Amperes Collector Current Peak Collector Current Diode Forward Current Diode Forward Pulse Current IEC 100 Amperes IECM 200* Amperes Pd 780 Watts - 17 in-lb Power Dissipation Max. Mounting Torque M5 Terminal Screws Max. Mounting Torque M5 Mounting Screws - 17 in-lb Module Weight (Typical) - 830 Grams VRMS 2500 Volts V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V - - 1.0 mA IGES VGE = VGES, VCE = 0V - - 0.5 A Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 5.0 6.5 8.0 Volts Collector-Emitter Saturation Voltage VCE(sat) Gate Leakage Current IC = 100A, VGE = 15V - 3.1 4.2** Volts IC = 100A, VGE = 15V, Tj = 150C - 2.95 - Volts Total Gate Charge QG VCC = 800V, IC = 100A, VGS = 15V - 510 - nC Diode Forward Voltage VFM IE = 100A, VGS = 0V - - 3.8 Volts Min. Typ. Max. Units - - 20 nF - - 7 nF ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Test Conditions VGE = 0V, VCE = 10V, f = 1MHz Reverse Transfer Capacitance Cres - - 4 nF Resistive Turn-on Delay Time td(on) - - 250 ns Load Rise Time Switch Turn-off Delay Time Times Fall Time tr VCC = 800V, IC = 100A, - - 400 ns td(off) VGE1 = VGE2 = 15V, RG = 3.1 - - 300 ns - - 500 ns Diode Reverse Recovery Time trr tf IE = 100A, diE/dt = -200A/s - - 300 ns Diode Reverse Recovery Charge Qrr IE = 100A, diE/dt = -200A/s - 1.0 - C Test Conditions Min. Typ. Max. Units Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified 356 Characteristics Symbol Thermal Resistance, Junction to Case Rth(j-c) Per IGBT - - 0.16 C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi - - 0.35 C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied - - 0.025 C/W Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100TF-28H Six-IGBT IGBTMODTM H-Series Module 100 Amperes/1400 Volts 200 160 VGE = 20V 11 120 80 10 40 9 7 VCE = 10V Tj = 25C Tj = 125C 160 120 80 40 0 0 2 4 VGE = 15V Tj = 25C Tj = 125C 4 3 2 1 8 0 6 8 0 0 10 4 8 12 16 20 0 40 80 120 160 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 10 IC = 200A IC = 100A 4 IC = 40A 8 12 16 100 1.0 20 2.0 2.5 3.0 3.5 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, t rr, (ns) td(off) VCC = 800V VGE = 15V RG = 3.1 Tj = 125C tf 102 COLLECTOR CURRENT, IC, (AMPERES) 102 Irr 101 100 101 EMITTER CURRENT, IE, (AMPERES) 100 101 102 GATE CHARGE, VGE 102 101 di/dt = -200A/sec Tj = 25C tr 101 Cres COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) t rr 102 10-1 10-1 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) td(on) 101 100 1.5 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 104 103 Coes 100 VGE = 0V f = 1MHz 0 4 101 Cies 101 100 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 2 102 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 6 CAPACITANCE, Cies, Coes, Cres, (nF) Tj = 25C 8 0 200 102 Tj = 25C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 12 13 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 15 Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 200 SWITCHING TIME, (ns) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) IC = 100A 16 VCC = 600V VCC = 800V 12 8 4 0 0 200 400 600 800 GATE CHARGE, QG, (nC) 357 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.16C/W 10-1 10-2 10-2 10-5 TIME, (s) 10-4 10-3 101 100 10-1 10-3 358 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) CM100TF-28H Six-IGBT IGBTMODTM H-Series Module 100 Amperes/1400 Volts 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.35C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3