Freescale Semiconductor Technical Data Document Number: MRF8P9040N Rev. 1, 10/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA, W--CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Driver Application -- 900 MHz * Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 320 mA, Pout = 4.0 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) ACPR (dBc) 920 MHz 18.9 18.9 --49.6 940 MHz 19.1 19.5 --50.1 960 MHz 19.1 19.9 --48.8 MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 728--960 MHz, 4.0 W AVG., 28 V CDMA, W--CDMA, LTE LATERAL N--CHANNEL RF POWER MOSFETs CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC MRF8P9040NR1 * Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 63 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness * Typical Pout @ 1 dB Compression Point 42 Watts CW Driver Application -- 700 MHz * Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 320 mA, Pout = 4.0 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) ACPR (dBc) 728 MHz 19.9 18.7 --49.9 748 MHz 20.1 19.1 --50.0 768 MHz 20.0 19.5 --49.9 Features * Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate--Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * Optimized for Doherty Applications * 225C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. CASE 1487--05, STYLE 1 TO--270 WB--4 GULL PLASTIC MRF8P9040GNR1 CASE 1484--04, STYLE 1 TO--272 WB--4 PLASTIC MRF8P9040NBR1 RFinA/VGSA 3 2 RFoutA/VDSA RFinB/VGSB 4 1 RFoutB/VDSB (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Pin Connections (c) Freescale Semiconductor, Inc., 2010. All rights reserved. RF Device Data Freescale Semiconductor MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS --0.5, +70 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 C TC 150 C TJ 225 C Symbol Value (2,3) Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case (4) Case Temperature 77C, 4.0 W CW, 28 Vdc, IDQ = 320 mA, 960 MHz Case Temperature 81C, 40 W CW, 28 Vdc, IDQ = 320 mA, 960 MHz RJC Unit C/W 1.5 1.3 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1B (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 170 Adc) VGS(th) 1.5 2.3 3.0 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 320 mAdc, Measured in Functional Test) VGS(Q) 2.3 3.1 3.8 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 0.55 Adc) VDS(on) 0.1 0.17 0.3 Vdc Characteristic Off Characteristics (4) On Characteristics (4) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Measurement made with device in single--ended configuration. (See Figure 3, Possible Circuit Topologies) (continued) MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1,2,3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 320 mA, Pout = 4.0 W Avg., f = 960 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 17.5 19.1 20.5 dB Drain Efficiency D 18.0 19.9 -- % ACPR -- --48.8 --46.0 dBc IRL -- --13 --9 dB Adjacent Channel Power Ratio Input Return Loss Typical Broadband Performance (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 320 mA, Pout = 4.0 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency Gps (dB) D (%) ACPR (dBc) IRL (dB) 920 MHz 18.9 18.9 --49.6 --12 940 MHz 19.1 19.5 --50.1 --13 960 MHz 19.1 19.9 --48.8 --13 Typical Performances (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 320 mA, 920--960 MHz Bandwidth Characteristic Pout @ 1 dB Compression Point, CW Symbol Min Typ Max Unit P1dB -- 42 -- W -- 22 -- 70 -- IMD Symmetry @ 45 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres -- Gain Flatness in 40 MHz Bandwidth @ Pout = 4.0 W Avg. GF -- 0.2 -- dB Gain Variation over Temperature (--30C to +85C) G -- 0.016 -- dB/C P1dB -- 0.001 -- dB/C Output Power Variation over Temperature (--30C to +85C) MHz MHz Typical Broadband Performance -- 700 MHz (1) (In Freescale 700 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 320 mA, Pout = 4.0 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency Gps (dB) D (%) ACPR (dBc) IRL (dB) 728 MHz 19.9 18.7 --49.9 --14 748 MHz 20.1 19.1 --50.0 --15 768 MHz 20.0 19.5 --49.9 --12 1. Measurement made with device in single--ended configuration. (See Figure 3, Possible Circuit Topologies) 2. Part internally input matched. 3. Measurement made with device in straight lead configuration before any lead forming operation is applied. MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 RF Device Data Freescale Semiconductor 3 C3 C5 C4 C6 B1 CUT OUT AREA C1 C12 C2 C9 C10 C11 MRF8P9040N/NB Rev 1 C7 C8 Figure 2. MRF8P9040NR1(GNR1)(NBR1) Test Circuit Component Layout Table 6. MRF8P9040NR1(GNR1)(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 RF Ferrite Bead MPZ2012S300AT000 TDK C1, C4, C5, C7, C11 51 pF Chip Capacitors ATC100B510GT500XT ATC C2 5.6 pF Chip Capacitor ATC100B5R6CT500XT ATC C3 2.2 F, 50 V Chip Capacitor C3225X7R1H225KT TDK C6, C8 10 F, 50 V Chip Capacitors 293D106X9050E2TE3 Vishay C9 6.8 pF Chip Capacitor ATC100B6R8CT500XT ATC C10 2.0 pF Chip Capacitor ATC100B2R0BT500XT ATC C12 220 F, 63 V Electrolytic Capacitor 227CKS050M Illinois Capacitor PCB 0.030, r = 3.5 RO4350B Rogers MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 4 RF Device Data Freescale Semiconductor Single--ended 4 Quadrature combined 4 4 2 2 Doherty Push--pull Figure 3. Possible Circuit Topologies MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 RF Device Data Freescale Semiconductor 5 18 D Single--Carrier W--CDMA, 3.84 MHz 16 Channel Bandwidth, Input Signal 14 PAR = 7.5 dB @ 0.01% Probability --47 on CCDF --48 18.5 18 Gps 17.5 PARC 17 --49 16.5 ACPR 16 15.5 15 820 --50 --51 IRL 840 860 880 900 0 --52 920 940 960 --3 --6 --9 --12 --15 980 0.1 0 --0.1 --0.2 --0.3 PARC (dB) 20 IRL, INPUT RETURN LOSS (dB) 19 Gps, POWER GAIN (dB) 22 VDD = 28 Vdc, Pout = 4.0 W (Avg.), IDQ = 320 mA 19.5 ACPR (dBc) 20 D, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS --0.4 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 4. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 4.0 Watts Avg. --20 IM3--L --30 IM3--U --40 IM5--U --50 IM7--U --60 --70 IM5--L IM7--L VDD = 28 Vdc, Pout = 45 W (PEP) IDQ = 320 mA, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 940 MHz 1 10 100 TWO--TONE SPACING (MHz) 20 0 19 18 17 16 15 VDD = 28 Vdc, IDQ = 320 mA, f = 940 MHz Single--Carrier W--CDMA D 60 0 50 --10 --1 dB = 11 W --1 ACPR --2 dB = 14 W 40 --2 30 --3 --3 dB = 20 W --4 --5 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0 8 16 24 20 Gps --20 --30 ACPR (dBc) 1 D, DRAIN EFFICIENCY (%) 21 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 5. Intermodulation Distortion Products versus Two--Tone Spacing --40 10 --50 0 --60 PARC 32 40 Pout, OUTPUT POWER (WATTS) Figure 6. Output Peak--to--Average Ratio Compression (PARC) versus Output Power MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Gps, POWER GAIN (dB) 19 920 MHz 18 D 940 MHz 960 MHz ACPR Input Signal PAR = 7.5 dB 17 @ 0.01% Probability on CCDF 60 0 50 --10 40 30 16 20 960 MHz Gps 940 MHz 920 MHz 15 0 100 14 1 10 10 --20 --30 --40 ACPR (dBc) VDD = 28 Vdc, IDQ = 320 mA, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth D, DRAIN EFFICIENCY (%) 20 --50 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 0 24 Gain --3 16 --6 12 --9 IRL 8 --12 VDD = 28 Vdc Pin = 0 dBm IDQ = 320 mA 4 0 750 850 800 IRL (dB) GAIN (dB) 20 --15 900 950 1000 1050 1100 --18 1150 f, FREQUENCY (MHz) Figure 8. Broadband Frequency Response W--CDMA TEST SIGNAL 100 10 0 --10 Input Signal --30 0.1 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --20 1 (dB) PROBABILITY (%) 10 0 1 2 3 4 5 6 --40 --50 --60 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 7 8 9 PEAK--TO--AVERAGE (dB) Figure 9. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 10 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 10. Single--Carrier W--CDMA Spectrum MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 RF Device Data Freescale Semiconductor 7 VDD = 28 Vdc, IDQ = 320 mA, Pout = 4.0 W Avg. f MHz Zsource Zload 820 6.33 -- j6.70 6.02 -- j0.61 840 6.46 -- j6.14 5.89 + j0.00 860 6.47 -- j5.83 5.80 + j0.44 880 6.15 -- j5.53 5.59 + j0.73 900 5.77 -- j5.09 5.31 + j1.05 920 5.53 -- j4.65 5.13 + j1.44 940 5.39 -- j4.29 5.06 + j1.84 960 5.30 -- j3.95 5.03 + j2.28 980 5.26 -- j3.54 4.99 + j2.78 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 11. Series Equivalent Source and Load Impedance MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 8 RF Device Data Freescale Semiconductor ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQ = 320 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle 53 Ideal Pout, OUTPUT POWER (dBm) 52 51 960 MHz 50 49 Actual 48 47 920 MHz 960 MHz 46 940 MHz 940 MHz 920 MHz 45 44 43 42 24 25 26 27 28 31 30 29 32 33 34 35 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V P1dB P3dB f (MHz) Watts dBm Watts dBm 920 65 48.1 79 49.0 940 65 48.1 76 48.8 960 63 48.0 74 48.7 Test Impedances per Compression Level f (MHz) Zsource Zload 920 P1dB 4.03 -- j5.45 2.24 + j0.08 940 P1dB 4.63 -- j6.15 2.21 + j0.35 960 P1dB 5.57 -- j5.96 2.36 + j0.47 Figure 12. Pulsed CW Output Power versus Input Power @ 28 V MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 RF Device Data Freescale Semiconductor 9 C3 C5 C4 C6 B1 CUT OUT AREA C13 C1 C12 C2 C9 C10 C11 MRF8P9040N/NB Rev 1 C7 C8 Figure 13. MRF8P9040NR1(GNR1)(NBR1) Test Circuit Component Layout -- 728--768 MHz Table 7. MRF8P9040NR1(GNR1)(NBR1) Test Circuit Component Designations and Values -- 728--768 MHz Part Description Part Number Manufacturer B1 RF Ferrite Bead MPZ2012S300AT000 TDK C1, C4, C5, C7, C11 82 pF Chip Capacitors ATC100B820JT500XT ATC C2, C9 12 pF Chip Capacitors ATC100B120JT500XT ATC C3 2.2 F, 50 V Chip Capacitor C3225X7R1H225KT TDK C6, C8 10 F, 50 V Tantalum Capacitors 293D106X9050E2TE3 Vishay C10 4.7 pF Chip Capacitor ATC100B4R7CT500XT ATC C12 220 F, 63 V Electrolytic Capacitor 227CKS050M Illinois Capacitor C13 1.5 pF Chip Capacitor ATC100B1R5BT500XT ATC PCB 0.030, r = 3.5 RO4350B Rogers MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 10 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS -- 728--768 MHz PARC 19.6 19.2 18.4 18 710 730 --49 --9 --49.2 --10 --49.6 --49.8 IRL 720 14 --49.4 ACPR 18.8 16 --11 --12 --13 --50 740 750 760 770 780 --14 790 0.1 0 --0.1 --0.2 --0.3 PARC (dB) Gps 20 18 IRL, INPUT RETURN LOSS (dB) 20.4 20 Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF D 20.8 D, DRAIN EFFICIENCY (%) 21.2 Gps, POWER GAIN (dB) 22 VDD = 28 Vdc, Pout = 4.0 W (Avg.), IDQ = 320 mA 21.6 ACPR (dBc) 22 --0.4 f, FREQUENCY (MHz) Figure 14. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 4.0 Watts Avg. D 20 ACPR 728 MHz 19 748 MHz 768 MHz 60 0 50 --10 40 30 18 20 728 MHz 748 MHz 17 Gps 10 --20 --30 --40 ACPR (dBc) VDD = 28 Vdc, IDQ = 320 mA, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input 21 Signal PAR = 7.5 dB @ 0.01% Probability on CCDF D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 22 --50 768 MHz 0 100 16 1 10 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 15. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 0 24 Gain --3 16 --6 12 --9 IRL 8 4 0 550 --12 VDD = 28 Vdc Pin = 0 dBm IDQ = 320 mA 600 650 IRL (dB) GAIN (dB) 20 --15 700 750 800 850 900 --18 950 f, FREQUENCY (MHz) Figure 16. Broadband Frequency Response MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 RF Device Data Freescale Semiconductor 11 VDD = 28 Vdc, IDQ = 320 mA, Pout = 4.0 W Avg. f MHz Zsource Zload 710 4.33 -- j2.57 6.05 + j1.24 720 4.23 -- j2.28 6.05 + j1.52 730 4.17 -- j1.99 6.10 + j1.81 740 4.15 -- j1.74 6.23 + j2.10 750 4.15 -- j1.53 6.45 + j2.36 760 4.13 -- j1.37 6.72 + j2.54 770 4.09 -- j1.24 7.02 + j2.64 780 4.02 -- j1.10 7.28 + j2.67 790 3.91 -- j0.93 7.47 + j2.71 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 17. Series Equivalent Source and Load Impedance -- 728--768 MHz MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 12 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 RF Device Data Freescale Semiconductor 13 MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 14 RF Device Data Freescale Semiconductor MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 RF Device Data Freescale Semiconductor 15 MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 16 RF Device Data Freescale Semiconductor MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 RF Device Data Freescale Semiconductor 17 MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 18 RF Device Data Freescale Semiconductor MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 RF Device Data Freescale Semiconductor 19 MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 20 RF Device Data Freescale Semiconductor MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 RF Device Data Freescale Semiconductor 21 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages * AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Sept. 2010 * Initial Release of Data Sheet 1 Oct. 2010 * Added part number MRF8P9040GNR1, ISO and Case Outline 1487--05, p. 1, 19--21 MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 22 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2010. All rights reserved. MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1 Document Number: RF Device Data MRF8P9040N Rev. 1, 10/2010 Freescale Semiconductor 23